A quantum dot light-emitting device and a manufacturing method therefor, and a display panel. The quantum dot light-emitting device comprises: a quantum dot layer and an electron transport layer adjacent to the quantum dot layer; the electron transport layer comprises a first group, and the quantum dot layer comprises a second group; the first group and the second group each comprise a hydrophilic group. The first group and the second group are combined by means of a hydrogen bond on contact surfaces of the quantum dot layer and the electron transport layer, to enhance an interface interaction force between the quantum dot layer and the electron transport layer, thereby reducing interface defects of the quantum dot layer and the electron transport layer, and improving the electroluminescence performance and stability of the quantum dot device.

An organic light emitting display apparatus including a substrate including a plurality of pixel areas; a pixel electrode on the substrate; an opposite electrode on the pixel electrode, the opposite electrode transmitting light; an organic light emitting layer between the pixel electrode and the opposite electrode, the organic light emitting layer emitting a first light toward the opposite electrode; a light emitting layer on the opposite electrode, the light emitting layer absorbing a portion of the first light and emitting a second light; and a sealing layer on the light emitting layer, the sealing layer sealing the pixel electrode, the opposite electrode, the organic light emitting layer, and the light emitting layer.

An electroluminescent element including an anode, a cathode, and a light-emitting layer provided between the anode and the cathode, in which the electroluminescent element further includes an electron transport layer including n-type semiconductor particles and a first insulating polymer, and a hole transport layer including p-type semiconductor particles, the electron transport layer is provided between the cathode and the light-emitting layer, the hole transport layer is provided between the anode and the light-emitting layer, and a volume proportion of the n-type semiconductor particles in the electron transport layer is smaller than a volume proportion of the p-type semiconductor particles in the hole transport layer.

A quantum dot LED display apparatus includes a substrate having a plurality of banks deposited thereon. A plurality of red emitting LED sub-pixels, green emitting LED sub-pixels, and blue emitting LED sub-pixels are individually disposed between the banks. Each of the red emitting LED sub-pixels, green emitting LED sub-pixels, and blue emitting LED sub-pixels has an emissive layer, wherein each of the emissive layers comprises quantum dots, an organic matrix, and a photoinitiator. A first concentration of the photoinitiator in the blue emitting LED sub-pixels is lower than a second concentration of the photoinitiator in the red emitting LED sub-pixels, and lower than a third concentration of the photoinitiator in the green emitting LED sub-pixels.

A light-emitting device includes a metal reflection layer having a phase modulation surface, a color conversion layer provided on the phase modulation surface of the metal reflection layer, a first electrode provided on the color conversion layer, a hole injection and transport layer provided on the first electrode, a blue organic light-emitting layer provided on the hole injection and transport layer, an electron injection and transport layer provided on the blue organic light-emitting layer, and a second electrode provided on the electron injection and transport layer. The phase modulation surface of the metal reflection layer generates magnetic resonance with respect to incident light. The color conversion layer includes a photoluminescent material.

The present application provides a display panel and a manufacturing method thereof. Quantum dot ink is prepared by dispersing a quantum dot light scattering particle composite in a dispersion medium. The quantum dot light scattering particle composite includes light scattering particles and oil phase quantum dots attached to surfaces of the light scattering particles. Oil solubility of the oil phase quantum dots is used to increase dispersion stability of the light scattering particles in the dispersion medium to satisfy process requirements of inkjet printing.

A quantum dot light-emitting device, a manufacturing method and a display device are provided. The quantum dot light-emitting device includes a substrate and a cathode arranged on the substrate; an electron transport layer arranged on one side of the cathode, away from the substrate, wherein the electron transport layer comprises a plurality of pixel regions; an adhesive layer arranged on one side of the electron transport layer, away from the cathode; a quantum dot film layer arranged on one side of the adhesive layer, away from the electron transport layer, wherein both the quantum dot film layer and the adhesive layer are located in the pixel regions; wherein the adhesive layer is respectively connected to the electron transport layer and the quantum dot film layer through at least one of chemical bonding and physical entanglement.

An object is to provide a composition which has performance, such as emission wavelength, of carbon quantum dots in a desired range and in which carbon quantum dots and layered clay minerals are uniformly dispersed, and a method for producing the composition to obtain the composition simply and easily.

The carbon quantum dot-containing composition achieving the object described above containing a carbon quantum dot obtained by reacting a solid organic compound having a reactive group in the presence of a layered clay mineral, and the layered clay mineral.

There is provided a photodetector element having a photoelectric conversion layer containing an aggregate of semiconductor quantum dots QD1 that contain a metal atom and containing a ligand L1 that is coordinated to the semiconductor quantum dot QD1, and a hole transport layer containing an aggregate of semiconductor quantum dots QD2 that contains a metal atom and containing a ligand L2 that is coordinated to the semiconductor quantum dot QD2, the hole transport layer being arranged on the photoelectric conversion layer, in which a band gap Eg2 of the semiconductor quantum dot QD2 is larger than a band gap Eg1 of the semiconductor quantum dot QD1, and a difference between the band gap Eg2 of the semiconductor quantum dot QD2 and the band gap Eg1 of the semiconductor quantum dot QD1 is 0.10 eV or more. There is also provided an image sensor including the photodetector element.

A material of a light emitting layer, a manufacturing method thereof, and an electroluminescent device are disclosed. The material of the light emitting layer includes a spiral nanotube structure and luminescent particles. The manufacturing method of the material of the light emitting layer includes steps of manufacturing the spiral nanotube structure and steps of manufacturing a guest-host structure. The manufacturing method is easily achieved, and a compatibility of the material is high.