Provided are a method of preparing quantum dots, a quantum dot prepared by the method, an optical member including the quantum dot, and an electronic apparatus including the quantum dot. The method includes: preparing a mixture of a semiconductor compound including indium (In), a first precursor including a first metal element, a second precursor including a second metal element, a third precursor including a third element, and a fourth precursor including a fourth element; and heating the mixture, wherein the first precursor and the second precursor are different from each other, and the third precursor and the fourth precursor are different from each other.

A polymer, a quantum dot composition, and a light-emitting device employing the same are provided. The polymer includes a first repeat unit that has a structure represented by Formula (I):

##STR00001##

wherein the definitions of R.sup.1, R.sup.2, A.sup.1, A.sup.2, A.sup.3, and Z.sup.1 and n are as defined in the specification.

A light-emitting material, including: a quantum dot represented by Formula 1; and Pb(SCN).sub.2, wherein a surface of the quantum dot is passivated by the Pb(SCN).sub.2, and wherein the light-emitting material has a stretching vibrational peak corresponding to a carbon-nitrogen triple bond in a range of about 2000 inverse centimeter to about 2100 inverse centimeter, as measured by infrared (IR) spectroscopy:

A.sup.1B.sup.1X.sup.1.sub.3  Formula 1

wherein, in Formula 1, A.sup.1 is at least one of a monovalent organic cation or a monovalent inorganic cation, B.sup.1 is Sn or Pb, and X.sup.1 is at least one halogen.

An array substrate (100) includes a first type of electroluminescent diode (110). The first type of electroluminescent diode (110) includes a first electrode (111), alight emitting structure layer (112) comprising nanoparticles (114), and a second electrode (113) disposed in a stacked manner. The nanoparticles (114) may be configured to increase luminous efficiency of the first type of electroluminescent diode (110).

An element includes an electron transportation layer containing nanoparticles, a QD layer containing QD phosphor particles, and a mixed layer sandwiched between the electron transportation layer and the QD layer to be adjacent to these layers. The mixed layer contains QD phosphor particles and nanoparticles.

A quantum dot including a core including a first semiconductor nanocrystal including a Group III-V compound, and a shell disposed on the core and including a semiconductor nanocrystal including a Group II-VI compound, wherein the quantum dots do not include cadmium, the shell includes a first layer disposed directly on the core and including a second semiconductor nanocrystal including zinc and selenium, a second layer, the second layer being an outermost layer of the shell and including a third semiconductor nanocrystal including zinc and sulfur, and a third layer disposed between the first layer and the second layer and including a fourth semiconductor nanocrystal including zinc, selenium, and optionally sulfur, and a difference between a peak emission wavelength of a colloidal solution of the quantum dot and a peak emission wavelength of a film prepared from the colloidal solution is less than or equal to about 5 nanometers (nm).

The present invention is directed to a method for preparing a device, the method comprising: forming a first layer on top of a first electrode, the layer comprising a metal oxide that is formed by the deposition of a metal oxide precursor composition that can be directly patterned by means of exposure to electromagnetic radiation to form a patterned metal oxide layer, optionally forming a second electrode over the first device layer, wherein the method further includes optionally forming a layer comprising quantum dots on top of the first layer or after formation of the first layer, and to a device comprising a first layer comprising a metal oxide prepared by the method of the invention.

A light-emitting element includes: a first electrode; a first carrier transport layer in electrical contact with the first electrode; a second electrode separated from the first electrode; a second carrier transport layer in electrical contact with the second electrode; and a light-emitting layer, wherein at least part of the light-emitting layer overlaps on part of the first carrier transport layer, and part of the light-emitting layer overlaps on part of the second carrier transport layer, and in plan view, the first carrier transport layer and the second carrier transport layer face each other with the light-emitting layer provided in between.

A method for preparing a quantum dot film, including: in the presence of an inert gas atmosphere, providing a mixed solution system comprising first quantum dots and a fatty acid solution of first ligands, and performing ligand exchange reaction under a first heating condition, to prepare second quantum dots having the first ligands having a structure of Formula 1 attached to surfaces thereof; and depositing the second quantum dots on a substrate to prepare a quantum dot prefabricated film, depositing a mixed solution containing an initiator and a cross-linker on the quantum dot prefabricated film, and heating to crosslink the first ligands on the surfaces of the second quantum dots; or alternatively, adding an initiator and a cross-linker to the second quantum dots, and depositing a resulting mixed system onto a substrate, heating to crosslink the first ligands on the surfaces of the second quantum dots.

A method of manufacturing microstructure array, a microstructure array, a micro-light-emitting diode, and a method for manufacturing the same, and a display device. The method of manufacturing microstructure array includes: preparing a red light-emitting perovskite precursor solution, a green light-emitting perovskite precursor solution, and a blue light-emitting perovskite precursor solution; coating the red light-emitting perovskite precursor solution, the green light-emitting perovskite precursor solution, and the blue light-emitting perovskite precursor solution, on a substrate having partitioned first, second, and third regions to form a red light-emitting perovskite precursor film, a green light-emitting perovskite precursor film, and a blue light-emitting perovskite precursor film, respectively; disposing a mold having a plurality of concave micropatterns on the red light-emitting perovskite precursor film, the green light-emitting perovskite precursor film, and the blue light-emitting perovskite precursor film, respectively; heat-treating the red light-emitting perovskite precursor film, the green light-emitting perovskite precursor film, and the blue light-emitting perovskite precursor film in a plurality of concave micropatterns to obtain each of red light-emitting perovskite nanocrystals, green light-emitting perovskite nanocrystals, and blue light-emitting perovskite nanocrystals, and removing the mold to form a microstructure array.