A light-emitting device is provided. The light-emitting device includes an anode, a cathode, and a combined charge transport and emissive layer (CCTEL) disposed between the anode and the cathode. The CCTEL includes a crosslinked charge transport material, a first plurality of quantum dots having a first energy gap, and a second plurality of quantum dots having a second energy gap wider than the first energy gap.

The present invention relates to semiconducting light emitting nanoparticles and compositions.

A quantum dot including: a core including a first semiconductor nanocrystal material including zinc, tellurium, and selenium; and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc, selenium, and sulfur, wherein the quantum dot does not include cadmium, and in the quantum dot, a mole ratio of the sulfur with respect to the selenium is less than or equal to about 2.4:1. A production method of the quantum dot and an electronic device including the same are also disclosed.

A semiconductor nanocrystal-ligand composite that includes a semiconductor nanocrystal and a ligand layer including an organic ligand coordinated on the surface of the semiconductor nanocrystal, wherein the organic ligand includes a moiety having a conjugation structure, and a first functional group (X) and a second functional group (Y) linked to the moiety having a conjugation structure, wherein the first functional group (X) is bound to the surface of the semiconductor nanocrystal and the second functional group (Y) is present at an ortho position with respect to the first functional group (X).

A display device includes: a resin substrate; a TFT layer; a bending portion; at least one inorganic film forming the TFT layer; an interlayer insulating film forming the TFT layer; and a plurality of wires forming the TFT layer, wherein the at least one inorganic film and the interlayer insulating film include an opening disposed at the bending portion, the at least one inorganic film includes a plurality of island-shaped inorganic films remaining in the opening, each of the plurality of wires overlaps a corresponding island-shaped inorganic film among the plurality of island-shaped inorganic films, and the display device includes a metal layer in a form of islands disposed between each of the plurality of wires and the corresponding island-shaped inorganic film overlapping each of the plurality of wires, the metal layer being in contact with each of the plurality of wires.

A method for manufacturing a quantum dot layer includes: performing first application of applying, to a position overlapping with a substrate, a first solution including a plurality of particles including a core and a first ligand, a first inorganic precursor, and a first solvent; performing first heating of heating first solution to a first temperature or higher after the performing first application, the first temperature being a higher temperature of a melting point of the first ligand and a boiling point of the first solvent; and performing second heating of heating the first inorganic precursor to a second temperature after the performing first heating, the second temperature being higher than the first temperature and being a temperature, at which the first inorganic precursor epitaxially grows around the core and at which a first shell configured to coat the core is formed to form a plurality of first quantum dots.

A light-emitting substrate, comprising a base, a pixel defining layer arranged on the base, and a plurality of light-emitting devices. The pixel defining layer is provided with a plurality of openings, and each light-emitting device comprises a quantum dot light-emitting pattern arranged in an opening, wherein each opening has a side wall, the side wall comprises a first portion and a second portion, the first portion is the portion of the side wall that is in contact with the quantum dot light-emitting pattern, and the second portion is the portion of the side wall that is away from the base relative to the first portion. The light-emitting substrate further comprises at least one blocking unit, each blocking unit comprises at least one siloxane chain segment, and each siloxane chain segment comprises at least one silicon oxygen bond; and each blocking unit is located in an opening, and at least one siloxane chain segment in each blocking unit is grafted to the second portion of a corresponding side wall.

A light-emitting device includes a first sub-pixel provided with a first light emitter, and a second sub-pixel provided with a second light emitter and constituting, together with the first sub-pixel, one of a plurality of pixels. The first light emitter has a first cathode, a first anode, and a first light-emitting layer containing a first quantum dot and disposed between the first cathode and the first anode. The second light emitter has a second cathode, a second anode, and a second light-emitting layer containing a second quantum dot and disposed between the second cathode and the second anode. The second quantum dot emits light having a longer light-emission wavelength than the first quantum dot. The first light-emitting layer is thicker than the second light-emitting layer.

A fabrication method of a display panel and a drying device are provided by the present application. In the display panel of the present application, an electrical field for drying on a pixel electrode layer is used to fix charged groups in a solution of a light-emitting functional layer, which prevents a solvent from driving the movement of the charged groups when the solvent is volatilized, thereby obtaining a light-emitting functional layer with a uniform film thickness. Moreover, the use of the electric field for drying fixes the charged groups so that a drying treatment is performed without strict pumping control during the solvent volatilization process.

A quantum dot light-emitting apparatus includes a substrate, with a first electrode layer located on the substrate. An emissive layer having a first set of quantum dots is electrically coupled with the first electrode layer, and a second electrode layer is also electrically coupled with the emissive layer. The second electrode layer is located opposite the first electrode layer, relative to the emissive layer. A first charge transport layer is placed between the emissive layer and the first electrode layer, and a second charge transport layer is placed between the emissive layer and the second electrode layer. At least one of the first charge transport layer and the second charge transport layer includes a second set of quantum dots.