A method of preparing a film and a light-emitting device are disclosed. The method includes: providing at least one gas-phase source above a substrate, the at least one gas-phase source made of materials comprising a perovskite material; and controlling an evaporation rate of the at least one gas-phase source to form a perovskite film. In the method provided by the present invention, a perovskite light-emitting layer is prepared by gas-phase source evaporation coating without an organic solvent, which avoids miscibility between the organic solvent and other layers and improves compatibility between the perovskite material and other film materials, thereby realizing the low preparation cost and the simple preparation process.

The present disclosure is related to a method of manufacturing a light-emitting layer. The method of manufacturing a light-emitting layer may include forming a layer of metal first halide perovskite on a substrate, forming a first pattern comprising metal second halide perovskite in the layer of metal first halide perovskite, and forming a second pattern comprising metal third halide perovskite in the layer of metal first halide perovskite.

A halide material having general formula ArMAX is disclosed. The halide material can be processed to an optoelectronic film with a halogenated formamidine and a lead halide, and the optoelectronic film can be applied in the manufacture of an optoelectronic device like a perovskite laser or a PeLED. Experimental data have proved that, the fabricated optoelectronic film shows a property of photoluminescence (PL) peak wavelength adjustable. Moreover, the PL peak wavelength moves from 482 nm to 534 nm with the increase of the content of lead (Pb), halogen (X) and formamidine (FA) in the optoelectronic film Furthermore, experimental data have also indicated that, the fabricated optoelectronic film can be used as a blue emissive layer, a red emissive layer or a green emissive layer, thereby having a significant potential for application in optoelectronics industry.

The present embodiments provide a semiconductor element comprising a first electrode, an active layer, a second electrode comprising a homogeneous metal layer, and further a barrier layer comprising a transparent metal oxide. The barrier layer is placed between the active layer and the second electrode. The present embodiments also provide a method for manufacturing said semiconductor element.

Provided are a core-shell structured perovskite nanocrystalline particle light-emitting body, a method of preparing the same, and a light emitting device using the same. The core-shell structured organic-inorganic hybrid perovskite nanocrystalline particle light-emitting body or metal halide perovskite nanocrystalline particle light-emitting body is able to be dispersed in an organic solvent, and has a perovskite nanocrystal structure and a core-shell structured nanocrystalline particle structure. Therefore, in the perovskite nanocrystalline particle light-emitting body of the present invention, as a shell is formed of a substance having a wider band gap than that of a core, excitons may be more dominantly confined in the core, and durability of the nanocrystal may be improved to prevent exposure of the core perovskite to the air using a perovskite or inorganic semiconductor, which is stable in the air, or an organic polymer.

An emissive perovskite ternary composite thin film comprising a perovskite material, an ionic-conducting polymer and an ionic-insulating polymer is provided. Additionally, a single-layer LEDs is described using a composite thin film of organometal halide perovskite (Pero), an ionic-conducting polymer (ICP) and an ionic-insulating polymer (IIP). The LEDs with Pero-ICP-IIP composite thin films exhibit a low turn-on voltage of about 1.9V (defined at 1 cd m.sup.−2 luminance) and a luminance of about 600,000 cd m.sup.−2.

An emissive perovskite ternary composite thin film comprising a perovskite material, an ionic-conducting polymer and an ionic-insulating polymer is provided. Additionally, a single-layer LEDs is described using a composite thin film of organometal halide perovskite (Pero), an ionic-conducting polymer (ICP) and an ionic-insulating polymer (IIP). The LEDs with Pero-ICP-IIP composite thin films exhibit a low turn-on voltage of about 1.9V (defined at 1 cd m.sup.−2 luminance) and a luminance of about 600,000 cd m.sup.−2.

The present disclosure provides a perovskite-type electroluminescent device and a method for fabricating the same. The perovskite-type electroluminescent device comprises a hole transport layer and an emissive layer disposed on the hole transport layer, wherein the hole transport layer comprises an upper hole transport layer and a lower hole transport layer. The lower hole transport layer is a porous structural layer. The upper hole transport layer adopts a material used in conventional hole transport layers. The hole transport layer composed of the upper hole transport layer and the porous structural layer has a high specific surface area that can effectively increase an interface contact area between the hole transport layer and the emissive layer. Therefore, an injection transport rate of holes is increased. This contributes to balance of electron and hole injection transport, thereby increasing external quantum conversion efficiency of the perovskite-type electroluminescent device.

Organic-inorganic perovskite nanoparticle compositions are described herein. In some embodiments, a nanoparticle composition comprises a layer of organic-inorganic perovskite nanocrystals, the organic-inorganic perovskite nanocrystals comprising surfaces associated with ligands of size unable to incorporate into octahedral corner sites of the perovskite crystal structure.

A pixel arrangement for a display is provided. The pixel arrangement comprises a plurality of sub-pixels. At least one sub-pixel comprises a perovskite light emitting diode. In one embodiment, a first sub-pixel is configured to emit a first colour of light, and includes a perovskite light emitting diode. A second sub-pixel is configured to emit a second colour of light that is different from the first colour, and a third sub-pixel is configured to emit a third colour of light that is different from the first and second colour. The second sub-pixel comprises a perovskite light emitting diode, an organic light emitting diode or a quantum dot light emitting diode. The third sub-pixel comprises a perovskite light emitting diode, an organic light emitting diode or a quantum dot light emitting diode.