A thin film transistor is provided. The thin film transistor is disposed on a base substrate and includes: a first active layer; a first gate disposed on a side of the first active layer; a first insulating layer disposed on a side of the first gate away from the base substrate; and a source and a drain. The first gate includes a stacked structure including: a first conductive layer; and a first barrier layer disposed on a side of the first conductive layer away from the base substrate, where a side of the first barrier layer away from the base substrate is in direct contact with a side of the first insulating layer proximate to the base substrate. The first barrier layer includes TiNx1, where 0≤x1<0.2, and x1 is a molar ratio of N to Ti.

A display device includes insulating layers, a light-emitting element, and a pixel circuit electrically connected to the light-emitting element. The pixel circuit includes a first transistor. The first transistor includes a metal oxide semiconductor pattern including a source region, a drain region and a channel region disposed between the source region and the drain region, a first gate disposed on the metal oxide semiconductor pattern and overlapping the channel region in a plan view, and a metal oxide pattern disposed on the first gate.

The disclosure provides a display device and a method of manufacturing the display device. The display device includes a first electrode disposed on an organic insulating layer and a second electrode disposed on an intermediate layer and overlapping the first electrode and an auxiliary electrode in a plan view, the second electrode electrically contacting the auxiliary electrode through a hole of the intermediate layer. A thickness of the intermediate layer varies in a direction away from a center of the hole of the intermediate layer.

A display apparatus includes a peripheral area including a first area, a bending area, and a second area, a display area, a first insulating layer located in the display area and at least a portion of the peripheral area, a gate electrode located in the display area, a first connection electrode located in the display area, a first organic insulating layer arranged in the display area and the peripheral area, a second organic insulating layer located in the display area and the peripheral area, and an input line including a first transmission line located in the first area, and a second transmission line located in the bending area.

A display device includes a display panel including a display area, a non-display area adjacent to the display area and including a pad area, a circuit layer in the display area and the pad area, and a light emitting element in the display area. The circuit layer includes a first conductive pattern in the pad area, an insulating layer on the first conductive pattern and in which is defined an opening exposing the first conductive pattern to outside the insulating layer, and a first insulating pattern which is on the insulating layer and extends into the opening to be on a top surface of the first conductive pattern.

The reliability of a transistor including an oxide semiconductor can be improved by suppressing a change in electrical characteristics. A transistor included in a semiconductor device includes a first oxide semiconductor film over a first insulating film, a gate insulating film over the first oxide semiconductor film, a second oxide semiconductor film over the gate insulating film, and a second insulating film over the first oxide semiconductor film and the second oxide semiconductor film. The first oxide semiconductor film includes a channel region in contact with the gate insulating film, a source region in contact with the second insulating film, and a drain region in contact with the second insulating film. The second oxide semiconductor film has a higher carrier density than the first oxide semiconductor film.

A display apparatus includes a substrate including a display area and a peripheral area surrounding the display area, a display layer disposed on the display area, a cover window covering the substrate, and a cover panel disposed on the substrate, where the substrate is disposed between the cover window and the cover panel. The cover panel includes a body portion covering the substrate, and a buffer portion extending from a side of the body portion and disposed between the substrate and the cover window.

The present disclosure relates to a display panel and a method for fabricating the same. According to an embodiment, a method for fabricating a display panel, comprises disposing a circuit array and connection lines on the support substrate, the circuit array disposed in the display area, the connection lines disposed in a non-display area; disposing a via layer on the support substrate; providing a sealing hole surrounding the display area by patterning the via layer; disposing a sealing member surrounding the display area on an encapsulation substrate. In the disposing of the circuit array and the connection lines comprises disposing an active layer overlapping a light shielding member and disposing an etch stopper corresponding to at least a portion of an overlapping area between the sealing hole and the first connecting line part, by patterning a semiconductor material layer on the buffer layer.

A display device includes a lower panel including a display element layer and an encapsulation layer disposed on the display element layer, an upper panel including a partition pattern including a first opening and a second opening, and a light control layer including a light control part disposed in the first opening, a protective layer disposed between the upper panel and the lower panel to overlap at least one of the first opening or the second opening and the partition pattern in a plan view, and a filling layer disposed between the protective layer and the lower panel.

A method for manufacturing a display device allows an opening pattern that opens at least some areas on a pixel defining layer between sub-pixels to be exposed to a strip solution in a process of stripping off a photoresist film and a protective film disposed on a light emitting layer, thereby increasing a dissolution speed of the protective film and reducing a difference in the dissolution speed of areas to improve uniformity of the process. In addition, in the display device of the present disclosure, a dummy light emitting layer formed on the pixel defining layer between the sub-pixels may interrupt a current flow between the sub-pixels adjacent to each other, thereby reducing a lateral leakage current that may occur between pixels adjacent to each other.