There is provided a light emitting device in which low power consumption can be realized even in the case of a large screen. The surface of a source signal line or a power supply line in a pixel portion is plated to reduce a resistance of a wiring. The source signal line in the pixel portion is manufactured by a step different from a source signal line in a driver circuit portion. The power supply line in the pixel portion is manufactured by a step different from a power supply line led on a substrate. A terminal is similarly plated to made the resistance reduction. It is desirable that a wiring before plating is made of the same material as a gate electrode and the surface of the wiring is plated to form the source signal line or the power supply line.

It is an object to provide a flexible light-emitting device with long lifetime in a simple way and to provide an inexpensive electronic device with long lifetime using the flexible light-emitting device. A flexible light-emitting device is provided, which includes a substrate having flexibility and a light-transmitting property with respect to visible light; a first adhesive layer over the substrate; an insulating film containing nitrogen and silicon over the first adhesive layer; a light-emitting element including a first electrode, a second electrode facing the first electrode, and an EL layer between the first electrode and the second electrode; a second adhesive layer over the second electrode; and a metal substrate over the second adhesive layer, wherein the thickness of the metal substrate is 10 μm to 200 μm inclusive. Further, an electronic device using the flexible light-emitting device is provided.

A display substrate includes: a base substrate including a photosensitive region, the photosensitive region including a plurality of display regions spaced apart and a gap region between the plurality of display regions; a first electrode layer on the base substrate; a light-emitting layer on a side of the first electrode layer away from the base substrate; and a second electrode layer on a side of the light-emitting layer away from the base substrate. Each display region corresponds to at least one first luminescent material region of the light-emitting layer; the gap region corresponds to the plurality of second luminescent material regions of the light-emitting layer; a part of the second electrode layer in the photosensitive region includes a plurality of second electrodes spaced apart, and an orthographic projection of each second electrode on the base substrate overlaps with each display region.

A method for producing flexible, nanoparticle-polymer composite electrodes is described. Conductive nanoparticles, preferably metal nanowires or nanotubes, are deposited on a smooth surface of a platform to produce a porous conductive layer. A second application of conductive nanoparticles or a mixture of nanoparticles can also be deposited to form a porous conductive layer. The conductive layer is then coated with at least one coating of monomers that is polymerized to form a conductive layer-polymer composite film. Optionally, a protective coating can be applied to the top of the composite film. In one embodiment, the monomer coating includes light transducing particles to reduce the total internal reflection of light through the composite film or pigments that absorb light at one wavelength and re-emit light at a longer wavelength. The resulting composite film has an active side that is smooth with surface height variations of 100 nm or less.

A method of manufacturing an array, substrate includes: providing a base; forming, on a side of the base, a plurality of quantum dot light-emitting layers arranged in an array, the plurality of quantum dot light-emitting layers being separated from each other by a plurality of first spaces, there being a corresponding one of the plurality of first spaces between every two adjacent quantum dot light-emitting layers of the plurality of quantum dot light-emitting layers, and the plurality of first spaces being communicated with each other; and forming a pixel defining layer in the plurality of first spaces.

A display device includes a flexible substrate, and a display region having a plurality of pixels on the flexible substrate. The substrate includes a resin layer, a first inorganic insulating layer provided on the first resin layer, and a second resin layer provided on the first insulating layer. A thickness of the second resin layer is larger than a thickness of the first resin layer, and the first resin layer is a resin layer baked at a higher baking temperature than the second resin layer.

Embodiments described herein provide thin film transistors (TFTs) and processes to reduce plasma induced damage in TFTs. In one embodiment, a buffer layer is disposed over a substrate and a semiconductor layer is disposed over the buffer layer. A gate dielectric layer is disposed over the semiconductor layer. The gate dielectric layer contacts the semiconductor layer at an interface. The gate electrode 204 is disposed over the gate dielectric layer. The gate dielectric layer has a D.sub.it of about 5e.sup.10 cm.sup.−2eV.sup.−1 to about 5e.sup.11 cm.sup.−2eV.sup.−1 and a hysteresis of about 0.10 V to about 0.30 V improve performance capability of the TFT while having a breakdown field between about 6 MV/cm and about 10 MV/cm.

A transistor in an embodiment includes an oxide semiconductor layer on a substrate, the oxide semiconductor layer including a first region and a second region, a first gate electrode including a region overlapping the oxide semiconductor layer, the first gate electrode being arranged on a surface of the oxide semiconductor layer opposite to the substrate, a first insulating layer between the first gate electrode and the oxide semiconductor layer, and a first oxide conductive layer and a second oxide conductive layer between the oxide semiconductor layer and the substrate, the first oxide conductive layer and the second oxide conductive layer each including a region in contact with the oxide semiconductor layer.

A display apparatus includes: a base substrate having a front surface, a rear surface opposite to the front surface, a module hole extending through the front surface and the rear surface, an active area, a peripheral area adjacent to the active area, and a margin area adjacent to the module hole; a circuit layer on the base substrate, the circuit layer including a driving element including a thin film transistor; a display element layer including: a deposition preventing pattern; and a light emitting element including: a first electrode connected to the thin film transistor; an emission pattern on the first electrode; and a second electrode disposed on the emission pattern. An encapsulation layer is on the display element layer, and encapsulating the light emitting element. The second electrode and the deposition preventing pattern are at a same layer and do not overlap with each other.

The present invention provides an organic light-emitting diode (OLED) display panel, a manufacturing method thereof, and a display device. The OLED display panel includes a substrate, an electrode layer, a pixel defining layer, and a light shielding layer. The electrode layer is spaced at intervals on the substrate. The pixel defining layer is placed on the substrate. The pixel defining layer includes dams and a light opening between any two adjacent dams. Each dam includes a dam body and a light shielding layer. A projection of the light shielding layer projected on the substrate is larger than or equal to a projection of the dam body projected on the substrate.