A display device includes: a bending region including a bending peripheral opening passing through the first interlayer insulating film and the first gate insulating film and a bending opening in the bending peripheral opening and passing through the second interlayer insulating film and the buffer layer to expose the substrate, a first sidewall of the bending peripheral opening includes a side surface of the first interlayer insulating film and a side surface of the first gate insulating film, the second interlayer insulating film covers the first sidewall of the bending peripheral opening, the bending opening includes a second sidewall including a side surface of the buffer layer and a portion of a side surface of the second interlayer insulating film arranged with the side surface of the buffer layer, and the first via layer fills the bending opening.

An OLED device includes: a first substrate having a bonding surface; a second substrate having a first surface; a coloring unit including an OLED layer and optionally a color-transformation layer, the OLED layer being formed on a selected one of the first and second substrates, the color-transformation layer being formed on the second substrate; and a pixel circuit with TFT functions disposed on the first substrate and coupled to the OLED layer. The bonding surface of the first substrate and the first surface of the second substrate are in direct bonding.

Provided is a display panel including a substrate layer, an active layer, a first insulating layer, a first metal layer, a second insulating layer, and a second metal layer that are stacked. The second metal layer located in a display area of the display panel comprises a first portion and a second portion, and the second metal layer located in a non-display area of the display panel comprises a third portion, wherein a thickness of the first portion of the second metal layer is less than thicknesses of the second portion and the third portion of the second metal layer.

Provided is a display device including: a substrate including an active area, a non-active area, a bending area and a pad area; the active area including pixels to display images, each pixel including an organic light emitting layer and a thin-film transistor (TFT); the non-active area located between the active area and the bending area; and the bending area configured to be bent and located between the non-active area and the pad area, the bending area including a signal line and a power line that are made of a same material as a source electrode or a drain electrode of the TFT in the active area.

An organic light-emitting display apparatus includes a display substrate and a thin film encapsulation layer on the display substrate. The display substrate includes at least one hole, a thin film transistor, a light-emitting portion electrically connected to the thin film transistor, and a plurality of insulating layers. The light-emitting portion includes a first electrode, an intermediate layer, and a second electrode. The display substrate includes an active area, an inactive area between the active area and the hole, and a plurality of insulating dams. Each insulating dam includes at least one layer. The inactive area includes a first area different from a laser-etched area and a second laser-etched area.

A display panel and a display apparatus. The display panel includes a first display region and a second display region, an array substrate, a plurality of light-emitting structures, a plurality of pixel driver circuits and at least one isolation structure. The first display region is disposed around at least a portion of the second display region, and the second display region corresponds to a photosensitive device configured to collect light through the second display region. The plurality of light-emitting structures are located on the array substrate and disposed in both the first display region and the second display region. The plurality of pixel driver circuits are disposed in the array substrate, and the plurality of pixel driver circuits are disposed in one-to-one correspondence with the plurality of light-emitting structures.

A display device provided with OLEDs improves the quality of an image. The display device includes a pixel array. A plurality of sub-pixels is arranged on the display surface of the pixel array. Furthermore, in the pixel array included in the display device, each of the plurality of sub-pixels is provided with a light-emitting portion and a reflector. At each of the plurality of sub-pixels arranged in the pixel array included in the display device, the reflector reflects light emitted from the light-emitting portion in a direction toward the central axis of the display surface.

Provided is a display element according to an aspect of the disclosure including a flattening film and, on the flattening film, a plurality of banks each having a linear shape, a plurality of active layers each having a linear shape and formed between adjacent banks, and an upper transparent electrode formed on each of the plurality of active layers. A cut line having a locally reduced height with reference to the flattening film is formed in each the plurality of banks, and the upper transparent electrode formed on one of the adjacent active layers and the upper transparent electrode formed on the other of the adjacent active layers are electrically connected via a conductive electrode formed in the cut line.

A display device (2) includes: a planarization film; and a light-emitting-element layer including an anode, an edge cover, an EL active layer, and a cathode in this sequence. The display device further includes: a first photospacer and a second photospacer each having a surface thereof covered by the cathode; and a lightning rod photospacer (44) including a second projection portion (44b) that is a part of the planarization film and having a surface thereof covered by a first metal film (44c) made of the same material and in the same layer as the anode.

A display device includes a resin substrate and a thin film transistor layer. The thin film transistor layer includes a first inorganic insulating film, a second inorganic insulating film, and a lead-out wiring line. A frame region includes a bending portion provided with a slit constituted with a first slit and a second slit. Portions of the first inorganic insulating film on both sides in a width direction of the first slit constituting step portions are exposed from the second inorganic insulating film inside the second slit. The lead-out wiring line is electrically connected to the thin film transistor. The step portions are provided with a protruding portion having an island shape. The lead-out wiring line includes an opening covering perimeter edge surface of the protruding portion and exposing an upper face of the protruding portion.