A display device including: a display panel; and an input sensor disposed on the display panel, wherein the input sensor includes: sensing electrodes; signal lines connected to the sensing electrodes; a first insulating layer; a second insulating layer disposed on the first insulating layer;

and first, second and third test patterns having different stacking structures from each other, wherein the first test pattern include a first conductive pattern, a first insulating pattern overlapping the first conductive pattern, and a second insulating pattern overlapping the first insulating pattern, the second test pattern includes a third insulating pattern and a fourth insulating pattern overlapping the third insulating pattern, and the third test pattern includes a second conductive pattern.

A display device includes: a base layer including a first surface, and a second surface; a plurality of pixels on the first surface; and a plurality of first lines on the first surface. The base layer includes: a first base layer; an etch stop layer on the first base layer; a plurality of second lines on the etch stop layer; and a second base layer on the etch stop layer and the second lines. The first base layer, the etch stop layer, the second lines, and the second base layer are sequentially stacked, and the first lines are electrically connected to the second lines through first contact holes.

Provided are a thin-film transistor substrate that has enhanced electrical characteristics, such as off-current characteristics of a thin-film transistor, without increasing the number of mask processes, a display apparatus, and a method of manufacturing the thin-film transistor substrate. The thin-film transistor substrate includes: a semiconductor layer including a first conductive region, a second conductive region, and a first semiconductor region; a lower electrode disposed on the semiconductor layer and at least partially overlapping the first semiconductor region; and an upper electrode disposed on the lower electrode and at least partially overlapping the first semiconductor region, a first boundary between the first semiconductor region and the first conductive region coincides with an edge of the upper electrode, and a second boundary between the first semiconductor region and the second conductive region coincides with an edge of the lower electrode or an edge of the upper electrode.

Provided are a display apparatus with improved display quality and a method of manufacturing the same, the display apparatus including: a substrate including a first base layer, a second base layer arranged over the first base layer, and a first barrier layer disposed between the first base layer and the second base layer; a first thin-film transistor arranged over the substrate and including a first semiconductor layer and a first gate electrode, wherein the first barrier layer includes a first sub-layer and a second sub-layer disposed on the first sub-layer, the first sub-layer including an inorganic material and the second sub-layer including amorphous silicon and crystallized silicon.

A display device includes a substrate including a display area and a test area adjacent to the display area, a lower electrode disposed in the display area on the substrate, a common layer disposed on the lower electrode, an upper electrode disposed on the common layer; and a test element group. The test element group includes a plurality of electrode patterns disposed in a same layer as the lower electrode and in the test area on the substrate, a test common layer disposed in a same layer as the common layer and on the electrode patterns, where a plurality of openings is defined through the test common layer to expose a part of each of the electrode patterns, and an electrode layer disposed in a same layer as the upper electrode, on the test common layer, and in contact with the electrode patterns through the openings.

A display apparatus includes: a substrate; a first semiconductor layer on the substrate, and including a silicon semiconductor; a second semiconductor layer on the first semiconductor layer, and including an oxide semiconductor; a first conductive layer on the second semiconductor layer; at least one metal layer between the first semiconductor layer and the first conductive layer; and a first contact hole to electrically connect the first semiconductor layer to the first conductive layer. An inner surface of the first contact hole includes a side surface of the at least one metal layer.

A display device includes a first lower electrode disposed on a base substrate, a first upper electrode disposed on the first lower electrode, overlapping the first lower electrode in a plan view, including a silicon semiconductor, and constituting a first capacitor together with the first lower electrode, a second lower electrode disposed on the first upper electrode, and a second upper electrode disposed on the second lower electrode, overlapping the second lower electrode in a plan view, including an oxide semiconductor, and constituting a second capacitor together with the second lower electrode.

Provided is a display apparatus manufacturing apparatus and method. A mask assembly includes a mask frame having an opening area, a first mask sheet arranged to cover a first opening area of the opening area and having a first opening portion, and a second mask sheet arranged to cover a second opening area of the opening area and having a second opening portion, wherein the first opening portion is different in size than the second opening portion.

A pixel having an organic light emitting diode (OLED) and method for fabricating the pixel is provided. A planarization dielectric layer is provided between a thin-film transistor (TFT) based backplane and OLED layers. A through via between the TFT backplane and the OLED layers forms a sidewall angle of less than 90 degrees to the TFT backplane. The via area and edges of an OLED bottom electrode pattern may be covered with a dielectric cap.

The present invention is a resin composition including (a) a resin, (b) an antioxidizing agent, and (d) a crosslinking agent, wherein the resin composition is characterized by the following: the resin (a) is formed of one or more kinds of resins selected from among polyimide precursor, polyamide, polyimide, polybenzoxazole, and copolymers thereof; and the crosslinking agent (d) includes a phenolic hydroxyl group in one molecule, and also includes a substituent group having a molecular weight of 40 or more at both ortho positions of the phenolic hydroxyl group. Provided is the resin composition by which obtained is a pattern-cured film that enables fine patterns to be obtained, that exhibits excellent in-plane pattern uniformity while being curable at a low temperature of 250° C. or less, and that retains high extensibility and high adhesion with metal wires even after a reliability evaluation which is an actual-use accelerated test.