H10K71/15

MANUFACTURING METHOD OF MATERIAL OF LIGHT EMITTING LAYER
20220380665 · 2022-12-01 ·

A material of a light emitting layer, a manufacturing method thereof, and an electroluminescent device are disclosed. The material of the light emitting layer includes a spiral nanotube structure and luminescent particles. The manufacturing method of the material of the light emitting layer includes steps of manufacturing the spiral nanotube structure and steps of manufacturing a guest-host structure. The manufacturing method is easily achieved, and a compatibility of the material is high.

Ink composition and method for manufacturing organic light emitting device
11515476 · 2022-11-29 · ·

The present specification relates to an ink composition including: a compound represented by Formula 1; and a solvent represented by the Formula 2, and a method for manufacturing an organic light emitting device formed by using the ink composition.

High energy density capacitor system and method
11508533 · 2022-11-22 · ·

A capacitor includes a first metal layer disposed on a wafer or substrate, a first polarized dielectric layer above the first metal layer and comprising a plurality of electrets formed by aligning molecular dipoles throughout a three-dimensional surface area of a polarizable dielectric material during polarization by applying a momentary electric field of positive or negative polarity, a second metal layer disposed on the first polarized dielectric layer to electrically isolate the first polarized dielectric layer, and a second polarized dielectric layer above the second metal layer, the second polarized dielectric layer comprising a plurality of electrets formed by aligning molecular dipoles throughout a three-dimensional surface area of a polarizable dielectric material during polarization by applying a second momentary electric field of opposing polarity. A plurality of alternating polarized dielectric layers and metal layers may be arranged in series to form a stack, with an internal passivation layer disposed between each stack.

Functional layer forming ink and self-luminous element manufacturing method
11508907 · 2022-11-22 · ·

An ink used in forming a functional layer of a self-luminous element by a printing method, the ink including a functional material and a mixed solvent. The mixed solvent includes solvents each having different vapor pressures. The functional material is dissolved or dispersed in the mixed solvent. A solvent that has a lowest vapor pressure among the solvents has a viscosity of at least 53 mPa.Math.s, and a viscosity of the mixed solvent is 15 mPa.Math.s or less.

LIQUID COMPOSITION, METALLIC LUSTER FILM, AND ARTICLE

A liquid composition contains a thiophene polymer and a solvent, and the difference |δp.sub.2−δp.sub.1| is 7.7 MPa.sup.0.5 or more and 13.4 MPa.sup.0.5 or less between a dipole-dipole force term δp.sub.1 of Hansen solubility parameter of the thiophene polymer and a dipole-dipole force term δp.sub.2 of Hansen solubility parameter of the solvent.

FORMULATION COMPRISING A P-TYPE ORGANIC SEMICONDUCTOR MATERIAL AND AN N-TYPE SEMICONDUCTOR MATERIAL
20220359825 · 2022-11-10 ·

A formulation for preparing organic electronic devices, has: a p-type organic semiconductor polymer including a conjugated aryl compound, a conjugated heteroaryl compound, or a mixture of at least two of these compounds; an n-type semiconductor material having fullerene, substituted fullerene, or a mixture of at least two of these compounds; and a non-aqueous solvent. The concentration of the p-type organic semiconductor polymer is in the range from 12 mg/mL to 17 mg/mL per milliliter of solvent and the concentration of the p-type organic semiconductor material is in the range from 24 mg/mL to 28 mg/mL per milliliter of solvent.

FORMULATION COMPRISING A P-TYPE ORGANIC SEMICONDUCTOR MATERIAL AND AN N-TYPE SEMICONDUCTOR MATERIAL
20220359826 · 2022-11-10 ·

A formulation for preparing organic electronic devices, has: a p-type organic semiconductor polymer including a conjugated aryl polymer, a conjugated heteroaryl compound or a mixture of at least two of these compounds; an n-type semiconductor material including fullerene, substituted fullerene, or a mixture of at least two of these compounds; and a non-aqueous solvent. The concentration of the p-type organic semiconductor polymer is in the range from 8 mg/mL to 12 mg/mL per milliliter of solvent and the concentration of the p-type organic semiconductor material is in the range from 18 mg/mL to 22 mg/mL per milliliter of solvent.

FORMULATION COMPRISING A P-TYPE ORGANIC SEMICONDUCTOR MATERIAL AND AN N-TYPE SEMICONDUCTOR MATERIAL
20220359842 · 2022-11-10 ·

A formulation for preparing organic electronic devices, has: a p-type organic semiconductor polymer including a conjugated aryl polymer, a conjugated heteroaryl compound, or a mixture of at least two of these compounds; an n-type semiconductor material including fullerene, substituted fullerene, or a mixture of at least two of these compounds; and a non-aqueous solvent. The concentration of the p-type organic semiconductor polymer is in the range from 4 mg/mL to 8 mg/mL per milliliter of solvent and the concentration of the p-type organic semiconductor material is in the range from 10 mg/mL to 14 mg/mL per milliliter of solvent.

Organic semiconductor composition, organic thin film, and organic thin film transistor

The purpose of the present invention is to provide: an organic semiconductor composition suitable for preparing an organic thin film by a solution method, an organic thin film obtained by using the organic semiconductor composition, and a practical field effect transistor which uses the organic thin film. The practical field effect transistor which uses the organic thin film has small variances in mobility and a threshold value, while maintaining a high mobility. Disclosed in the present specification is an organic semiconductor composition including an organic semiconductor compound, an insulation compound, an organic solvent A, which is a good solvent for the insulation compound, and an organic solvent B, which is a poor solvent for the insulation compound and has a higher boiling point than the organic solvent A. The mass ratio a:b of the organic solvent A and the organic solvent B is 1:8 to 8:1.

Pixel defining layer and manufacturing method thereof, array substrate and display device

The present disclosure discloses a pixel defining layer and a manufacturing method thereof, an array substrate and a display device, and belongs to the field of display technology. The pixel defining layer includes a plurality of pixel defining structures arranged in an array, wherein the pixel defining structure includes a first bottom surface and a second bottom surface opposite each other, and a side surface located between the first bottom surface and the second bottom surface. Since the side surface is non-planar, the structure between the side surface and the bottom surface close to the base substrate constitutes a capillary structure. During the inkjet printing process, the solution in which the organic light emitting material is dissolved can spread more evenly under the attraction of the capillary structure.