The method for manufacturing a display device includes forming a light emitting element and a terminal on a substrate, forming a sealing film including a first inorganic insulating film and a second inorganic insulating film to cover the light emitting element and the terminal, forming a resist having a taper shape in which a thickness of an end portion on the sealing film becomes thinner as it goes to the terminal side by using a gray-tone mask, forming a taper shape in which thicknesses in end portions of the first inorganic insulating film and the second inorganic insulating film becomes thinner as it goes to the terminal side by etching, forming a touch electrode above the sealing film and forming wiring connected to the terminal via the end portions together with connecting to the touch electrode for detecting a touched position.

A method for forming a pixelated optoelectronic stack comprises forming a stacked layer structure that comprises a bottom electrode layer, an optoelectronic layer over the bottom electrode layer, and a patterned hard-mask comprising a pattern over the optoelectronic layer. The method comprises replicating the pattern into the optoelectronic layer and the bottom electrode layer, thereby forming a first intermediate pixelated stack comprising at least two islands of stack separated from one another by stack-free areas; providing an electrically insulating layer on the first intermediate pixelated stack; removing a top portion of the electrically insulating layer and removing any remaining hard-mask so that a top surface of the electrically insulating layer is coplanar with an exposed top surface of the first intermediate pixelated stack, yielding a second intermediate pixelated stack; and forming a top transparent electrode layer over the second intermediate pixelated stack.

A dry-state non-contact method for patterning of nanostructured conducting materials is disclosed. Short self-generated electron-emission pulses in air at atmospheric pressure can enable an electron-emission-based (field enhancement) interaction between a sharp tungsten tip and elements of the nanostructured materials to cause largely non-oxidative sequential decomposition of the nanostructured elements. Embodiments can employ a substrate/tip gap of 10 to 20 nm, discharge voltages of 25-30 V, and patterning speeds as fast as 10 cm/s to provide precisely patterned nanostructures (<200 nm) that are largely free of foreign contaminants, thermal impact and sub-surface structural changes.

A mask includes a substrate and an electrochromic layer that overlap each other. The electrochromic layer includes an electrochromic material.

Micron scale tin oxide-based semiconductor devices are provided. Reactive-ion etching is used to produce a micron-scale electronic device using semiconductor films with tin oxides, such as barium stannate (BaSnO.sub.3). The electronic devices produced with this approach have high mobility, drain current, and on-off ratio without adversely affecting qualities of the tin oxide semiconductor, such as resistivity, electron or hole mobility, and surface roughness. In this manner, electronic devices, such as field-effect transistors (e.g., thin-film transistors (TFTs)), are produced having micron scale channel lengths and exhibiting complete depletion at room temperature.

A display substrate, a manufacturing method thereof, and a display device. The method includes: forming a pixel definition layer transitional pattern on a base substrate, the pixel definition layer transitional pattern being provided at a lateral surface with an undercut; forming a common layer, which is broken at the undercut, on the base substrate; removing the undercut to obtain a pattern of a pixel definition layer; and forming a cathode on the base substrate.

A method for forming a light emitting element pattern according to an embodiment of the inventive concept includes forming a pattern layer having an opening on a target material, forming a light emitting element pattern on the target material in correspondence to the opening, and removing the pattern layer. Here, the pattern layer includes a first pattern layer disposed on the target material, a second pattern layer disposed on the first pattern layer, and a third pattern layer disposed on the second pattern layer. The second pattern layer has an undercut portion recessed from edges of the third pattern layer.

In a method of forming a gate-all-around field effect transistor (GAA FET), a fin structure including carbon nanotubes (CNTs) embedded in a semiconductor layer is formed, a sacrificial gate structure is formed over the fin structure, the semiconductor layer is doped at a source/drain region of the fin structure, an interlayer dielectric (ILD) layer is formed over the doped source/drain region and the sacrificial gate structure, a source/drain opening is formed by patterning the ILD layer, and a source/drain contact layer is formed over the doped source/drain region of the fin structure.

An electronic device or a light-emitting device with high design flexibility and favorable reliability is provided by the following steps. A light-emitting layer containing organic compounds is formed over a substrate provided with a first electrode, the substrate is held in lighting of a light source whose shortest-wavelength peak among spectrum peaks is positioned at a wavelength longer than a longest-wavelength absorption edge among absorption edges in absorption spectra of the organic compounds, a sacrificial layer is formed over the light-emitting layer, at least the light-emitting layer is processed into an island shape by a lithography method, and a second electrode is formed over the light-emitting layer.

An optoelectronic device that includes a substrate and a stack of organic layers that has at least one active layer arranged between a reflective surface and a semi-reflective surface arranged facing one another at a given distance and forming an optical cavity. The device includes at least three groups of pixels, each group of which is characterized by a cavity of a different optical length, the cavity having a number of bilayers arranged between the substrate and said stack of organic layers, each bilayer being formed of a first transparent and conductive layer of a first transparent and conductive material, and of a second transparent and conductive layer of a second transparent and conductive material, in direct contact with the first transparent and conductive layer.