H10K71/233

Shaping nanomaterials by short electrical pulses

A dry-state non-contact method for patterning of nanostructured conducting materials is disclosed. Short self-generated electron-emission pulses in air at atmospheric pressure can enable an electron-emission-based (field enhancement) interaction between a sharp tungsten tip and elements of the nanostructured materials to cause largely non-oxidative sequential decomposition of the nanostructured elements. Embodiments can employ a substrate/tip gap of 10 to 20 nm, discharge voltages of 25-30 V, and patterning speeds as fast as 10 cm/s to provide precisely patterned nanostructures (<200 nm) that are largely free of foreign contaminants, thermal impact and sub-surface structural changes.

ORGANIC ELECTROLUMINESCENT DISPLAY PANEL, MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE

An organic electroluminescent display panel, a method of manufacturing the same, and a display device that can alleviate or avoid the occurrence of pixel crosstalk problems due to lateral conduction of the charge generation layer are disclosed. An organic electroluminescent display panel is provided which comprises: a substrate; an anode layer and a pixel defining layer over the substrate, the pixel defining layer defining pixel units, wherein a recess is provided in the pixel defining layer between adjacent pixel units; a stack of organic electroluminescent units over the anode layer and the pixel defining layer, the stack comprising at least two organic electroluminescent units and a charge generation layer disposed between organic electroluminescent units which are adjacent to each other; a cathode layer over the stack. The corresponding charge generation layers of the adjacent pixel units are disconnected at the recesses. The cathode layer is continuous at the recess.

ARRAY SUBSTRATE AND FABRICATING METHOD THEREOF, DISPLAY PANEL, AND DISPLAY APPARATUS
20220278182 · 2022-09-01 ·

The present disclose is related to an array substrate. The array substrate may include a base substrate; a driving transistor on the base substrate; an insulating layer on the driving transistor, the insulating layer comprising a via hole above a first electrode of the driving transistor; a conductive portion on the insulating layer; and a light emitting device on the conductive portion and electrically connected to the conductive portion. The conductive portion may be electrically connected to the first electrode of the driving transistor through the via hole. The light emitting device may be above the via hole, and an orthographic projection of the light emitting device on the base substrate may cover an orthographic projection of the via hole on the base substrate.

Peel-off Patterning Method for Fabrication of Organic Optoelectronic Devices
20220278280 · 2022-09-01 ·

A method of fabricating an organic optoelectronic device comprises positioning a patterning layer over a substrate, etching the patterning layer using a photolithographic process to create an etched patterning layer, positioning a layer of an organic material over the etched patterning layer, and removing at least a portion of the etched patterning layer and at least a portion of the layer of the organic material to create a patterned organic layer over the substrate.

TRANSPARENT ORGANIC LIGHT EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME

A method of manufacturing a transparent organic light emitting display apparatus having an emission area, and a transmission area disposed adjacent to the emission area and configured to pass external light therethrough, includes sequentially forming an interlayer dielectric and a first protection layer on a first substrate, patterning a planarization layer over the first protection layer, forming an organic light emitting device over the planarization layer, forming an encapsulation layer and an encapsulation substrate over the organic light emitting device, and exposing and etching at least some portions of the transmission area by using photolithography after the patterning of the planarization layer.

Display substrate motherboard with blocking region and manufacturing method thereof, display panel motherboard and manufacturing method of display substrate

The disclosure provides a display substrate motherboard, a manufacturing method thereof, a display panel motherboard and a manufacturing method of a display substrate. The display substrate motherboard includes a base substrate including multiple substrate areas, each substrate area including a display region and a pad region; a display structure layer located on the base substrate and including a pixel defining layer and multiple film layers located between the pixel defining layer and the base substrate, a blocking region is arranged between any two adjacent substrate areas; a portion of the display structure layer in the blocking region has a first groove therein, a portion of the display structure layer between the first groove and the pad region adjacent thereto constitutes a first spacer region; a thickness of the portion of the display structure layer in the first spacer region is less than that in the display region.

Display substrate, method for manufacturing the same and display device

A display substrate, a method for manufacturing the same and a display device are provided. The display substrate includes a base, a pixel definition layer disposed on the base, and a light-emitting unit disposed in a pixel opening region defined by the pixel definition layer; the display substrate further includes: a diversion channel provided on a surface of the pixel definition layer that is away from the base; and an encapsulation layer covering the light-emitting unit and the pixel definition layer, wherein the encapsulation layer fills the diversion channel. The display substrate in the present disclosure is used for displaying an image.

THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME AND THIN FILM TRANSISTOR PANEL AND ELECTRONIC DEVICE

A thin film transistor includes a gate electrode, a semiconductor layer overlapped with the gate electrode, a gate insulating layer between the gate electrode and the semiconductor layer, and a source electrode and a drain electrode electrically connected to the semiconductor layer. The semiconductor layer includes a plurality of holes. The gate insulating layer may include a plurality of recess portions at a surface of the gate insulating layer facing the semiconductor layer. A method of manufacturing the thin film transistor is provided. A thin film transistor array panel and an electronic device may include the thin film transistor.

DISPLAY SUBSTRATE, MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE

A display substrate, a manufacturing method thereof, and a display device. The method includes: forming a pixel definition layer transitional pattern on a base substrate, the pixel definition layer transitional pattern being provided at a lateral surface with an undercut; forming a common layer, which is broken at the undercut, on the base substrate; removing the undercut to obtain a pattern of a pixel definition layer; and forming a cathode on the base substrate.

DISPLAY SUBSTRATE AND MANUFACTURING METHOD THEREFOR, AND DISPLAY DEVICE
20220085330 · 2022-03-17 ·

A display substrate has an active area and a frame region located at least one side of the active area. The display substrate includes a substrate, pixel units, at least one blocking dam and a first encapsulation layer. The pixel units is disposed on the substrate and located in the active area. The at least one blocking dam is disposed on the substrate and located in the frame area. The at least one blocking dam is provided with at least one groove on a surface thereof facing away from the substrate, a depth direction of the at least one groove is perpendicular to the substrate, and an extending direction of the at least one groove is substantially the same as an extending direction of the blocking dam provided with the at least one groove. The first encapsulation layer covers the at least one blocking dam.