A film forming method for forming a coating film by applying a coating solution onto a substrate having projections and recesses formed on a surface thereof by a predetermined pattern, includes: applying the coating solution onto the surface of the substrate to form a thick film having a depth of projections and recesses on a surface of the film of a predetermined value or less and having a film thickness larger than a target film thickness of the coating film; and removing the surface of the thick film to form the coating film having the target film thickness.

A display device may include a substrate, a first layer on the substrate, the first layer including a first portion having a first thickness and a second portion having a second thickness greater than the first thickness, a second layer on the first layer, an active pattern on the second layer, the active pattern overlapping only the first portion of the first layer, a gate electrode on the active pattern, a source electrode and a drain electrode on the gate electrode and connected to the active pattern, a first electrode connected to one of the source electrode and the drain electrode, a pixel defining layer on the first electrode, the pixel defining layer having an opening portion exposing at least a portion of the first electrode, an emission layer in the opening portion on the first electrode, and a second electrode on the emission layer.

A method of manufacturing an electroluminescent device includes the following steps. A substrate including a first sub-pixel region and a second sub-pixel region is provided. A first light-emitting layer is formed over the substrate through a shadow mask to cover the first sub-pixel region and at least a portion of the second sub-pixel region. A sacrificial layer is formed over the substrate, wherein the sacrificial layer includes an opening exposing a portion of the first light-emitting layer that is over the second sub-pixel region. The portion of the first light-emitting layer that is over the second sub-pixel region is removed. A second light-emitting layer is formed over the sacrificial layer and on the second sub-pixel region through the opening of the sacrificial layer. The sacrificial layer is removed simultaneously with a portion of the second light-emitting layer that is over the sacrificial layer.

The present disclosure provides a display panel, a display device, and a method for manufacturing the display panel. The display panel comprises an array substrate and a pixel-defining layer disposed on the array substrate. The pixel-defining layer has a plurality of pixel regions and defines a plurality of recesses non-overlapped with the plurality of pixel regions.

A method of forming a structure for etch masking that includes forming first dielectric spacers on sidewalls of a plurality of mandrel structures and forming non-mandrel structures in space between adjacent first dielectric spacers. Second dielectric spacers are formed on sidewalls of an etch mask having a window that exposes a connecting portion of a centralized first dielectric spacer. The connecting portion of the centralized first dielectric spacer is removed. The mandrel structures and non-mandrel structures are removed selectively to the first dielectric spacers to provide an etch mask. The connecting portion removed from the centralized first dielectric spacer provides an opening connecting a first trench corresponding to the mandrel structures and a second trench corresponding to the non-mandrel structures.

The present disclosure relates to an organic electroluminescent display panel, a method of manufacturing the same, and a display device that can alleviate or avoid the occurrence of pixel crosstalk problems due to lateral conduction of the charge generation layer. An organic electroluminescent display panel is provided which comprises: a substrate; an anode layer and a pixel defining layer over the substrate, the pixel defining layer defining pixel units, wherein a recess is provided in the pixel defining layer between adjacent pixel units; a stack of organic electroluminescent units over the anode layer and the pixel defining layer, the stack comprising at least two organic electroluminescent units and a charge generation layer disposed between organic electroluminescent units which are adjacent to each other; a cathode layer over the stack, wherein the corresponding charge generation layers of the adjacent pixel units are disconnected at the recesses, and wherein the cathode layer is continuous at the recess.

An organic electroluminescent device includes a substrate, a number of first electrodes disposed on the substrate, each of the first electrodes used to form a light-emitting unit; an insulative layer disposed on the substrate and used to define a pixel region of the light-emitting unit; a number of second electrodes disposed on the substrate, each of the second electrodes used to form a light-emitting unit, wherein the second electrodes are spaced apart from one another to form a number of isolation grooves each between two adjacent second electrodes.

Provided is a method for manufacturing a field-effect transistor, the method including the steps of: forming a gate electrode on the surface of a substrate; forming a gate insulating layer on the gate electrode; forming a conductive film containing a conductor and a photosensitive organic component by a coating method on the gate insulating layer; exposing the conductive film from the rear surface side of the substrate with the gate electrode as a mask; developing the exposed conductive film to form a source electrode and a drain electrode; and forming a semiconductor layer by a coating method between the source electrode and the drain electrode. This method makes it possible to provide an FET, a semiconductor device, and an RFID which can be prepared by a simple process, and which have a high mobility, and have a gate electrode and source/drain electrodes aligned with a high degree of accuracy.

An array substrate includes a base substrate (1); a driving transistor (2) on the base substrate (1); an insulating layer (3) on the driving transistor (2), the insulating layer (3) comprising a via hole above a first electrode (21) of the driving transistor (2); a conductive portion (4) on the insulating layer (3); and a light emitting device (6) on the conductive portion (4) and electrically connected to the conductive portion (4). The conductive portion (4) may be electrically connected to the first electrode (21) of the driving transistor (2) through the via hole. The light emitting device (6) may be above the via hole, and an orthographic projection of the light emitting device (6) on the base substrate (1) may cover an orthographic projection of the via hole on the base substrate (1).

A method for forming a light emitting element pattern according to an embodiment of the inventive concept includes forming a pattern layer having an opening on a target material, forming a light emitting element pattern on the target material in correspondence to the opening, and removing the pattern layer. Here, the pattern layer includes a first pattern layer disposed on the target material, a second pattern layer disposed on the first pattern layer, and a third pattern layer disposed on the second pattern layer. The second pattern layer has an undercut portion recessed from edges of the third pattern layer.