Embodiments of the present disclosure provide a display panel and a method for manufacturing the same. In the embodiments, multiple layers in a functional area are removed through an etching process which is milder than a traditional cutting process and is not easy to introduce cracks into an inorganic material layer, so that a damage of components inside the display panel caused by moisture and oxygen is prevented, resulting in yield improvement of the display panel and cost saving.

An organic light-emitting diode (OLED) display panel and a method for manufacturing the same are provided. The OLED display panel at least includes a thin film transistor (TFT) array substrate, a passivation layer, a planarization layer, and planarization-compensating layer. The planarization layer has a first planarization part corresponding to a light-emitting area, and a second planarization part corresponding to a defining area and a part of the light-emitting area. Height of a surface of the planarization-compensating layer from the surface of the TFT array substrate and height of a surface of the second planarization part from the surface of the TFT array substrate are level.

A displaying base plate includes an opening region, an adjacent region surrounding the opening region, and a displaying region surrounding the adjacent region, and the displaying base plate located within the adjacent region includes: a substrate base plate; a flat layer and a passivation layer that are provided on one side of the substrate base plate, wherein the passivation layer is provided on one side of the flat layer that is further away from the substrate base plate, a surface of the one side of the flat layer that is further away from the substrate base plate includes at least an inclined plane adjacent to one side of the opening region, and the flat layer includes a first protrusion provided on the inclined plane; and a first isolating groove that at least partially overlaps with the first protrusion and extends throughout the passivation layer and extends into the first protrusion.

A quantum dot LED display apparatus includes a substrate having a plurality of banks deposited thereon. A plurality of red emitting LED sub-pixels, green emitting LED sub-pixels, and blue emitting LED sub-pixels are individually disposed between the banks. Each of the red emitting LED sub-pixels, green emitting LED sub-pixels, and blue emitting LED sub-pixels has an emissive layer, wherein each of the emissive layers comprises quantum dots, an organic matrix, and a photoinitiator. A first concentration of the photoinitiator in the blue emitting LED sub-pixels is lower than a second concentration of the photoinitiator in the red emitting LED sub-pixels, and lower than a third concentration of the photoinitiator in the green emitting LED sub-pixels.

An organic light-emitting diode (OLED) display panel and a method for manufacturing the same are provided. The OLED display panel at least includes a thin film transistor (TFT) array substrate, a passivation layer, a planarization layer, and planarization-compensating layer. The planarization layer has a first planarization part corresponding to a light-emitting area, and a second planarization part corresponding to a defining area and a part of the light-emitting area. Height of a surface of the planarization-compensating layer from the surface of the TFT array substrate and height of a surface of the second planarization part from the surface of the TFT array substrate are level.

A manufacturing method of a display device includes providing a first organic layer in a display area and a non-display area, to cover a pixel electrode and a pad electrode, respectively, providing a first electrode of a light emitting element, in the display area, the first organic layer being between the pixel electrode and the first electrode, after forming the first electrode, removing a portion of the first organic layer which is in the non-display area, to expose the pad electrode from the first organic layer; and providing a light emitting layer of the light emitting element, corresponding to the first electrode.

An etching composition for a silver-containing thin film, the etching composition comprising an inorganic acid compound, a sulfonic acid compound, an organic acid compound, a nitrate, a metal oxidizing agent, an amino acid compound, and water.

A manufacturing method of a display device includes providing a first organic layer in a display area and a non-display area, to cover a pixel electrode and a pad electrode, respectively, providing a first electrode of a light emitting element, in the display area, the first organic layer being between the pixel electrode and the first electrode, after forming the first electrode, removing a portion of the first organic layer which is in the non-display area, to expose the pad electrode from the first organic layer; and providing a light emitting layer of the light emitting element, corresponding to the first electrode.

The present invention provides compounds of formula ##STR00001##
a process for their preparation, a solution comprising these compounds, a process for the preparation of a device using the solution, devices obtainable by the process and the use of the bis-azide-type compounds as cross-linkers.

A film-forming composition according to the present invention include fluororesin having a repeating unit of the general formula (1); and a fluorine-containing solvent. ##STR00001##
In the general formula (1), R.sup.1 each independently represents a hydrogen atom, a fluorine atom, a methyl group or a trifluoromethyl group; and R.sup.2 each independently represents C.sub.1-C.sub.15 straight, C.sub.3-C.sub.15 branched or C.sub.3-C.sub.15cyclic fluorine-containing hydrocarbon gr which any hydrogen atom may be replaced by a fluorine atom with the proviso that the repeating unit contains at least one fluorine atom. This film-forming composition is suitably usable for the manufacturing of an organic semiconductor element because the composition can form a film on an organic semiconductor film; and the formed film has resistance to an etching solvent during the fine pattern processing of the organic semiconductor film by photolithography etc.