A method for producing a semiconducting organic film comprising the steps: preparing a first mixture comprising a first organic semiconducting material of type p having a molar mass of less than or equal to 2,000 g.Math.mol.sup.?1 and a first organic semiconducting material of type n having a molar mass of less than or equal to 2,000 g.Math.mol.sup.?1, adding a second organic semiconducting material to the first mixture to form a second mixture, wherein the second organic semiconducting material is one or more polymers having a molar mass greater than or equal to 10,000 g.Math.mol.sup.?1, and forming the organic film from the second mixture.

A manufacturing method of electroluminescent devices includes: providing a first electrode; electrically depositing a first carrier injection layer on the first electrode to form a first electrode component; adopting a multiple transfer-print method to form a plurality of functional layers on the first electrode component in turn, one functional layer is manufactured by executing the transfer-print method once; and arranging a second electrode on the farthest functional layer away from the first carrier injection layer. The manufacturing method is capable of manufacturing the electroluminescent devices having a plurality of functional layers. The material utilization rate is high and the cost is low.

Various embodiment include optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit having an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused. Additional devices and methods are described.

By controlling the luminance of light emitting element not by means of a voltage to be impressed to the TFT but by means of controlling a current that flows to the TFT in a signal line drive circuit, the current that flows to the light emitting element is held to a desired value without depending on the characteristics of the TFT. Further, a voltage of inverted bias is impressed to the light emitting element every predetermined period. Since a multiplier effect is given by the two configurations described above, it is possible to prevent the luminance from deteriorating due to a deterioration of the organic luminescent layer, and further, it is possible to maintain the current that flows to the light emitting element to a desired value without depending on the characteristics of the TFT.

By controlling the luminance of light emitting element not by means of a voltage to be impressed to the TFT but by means of controlling a current that flows to the TFT in a signal line drive circuit, the current that flows to the light emitting element is held to a desired value without depending on the characteristics of the TFT. Further, a voltage of inverted bias is impressed to the light emitting element every predetermined period. Since a multiplier effect is given by the two configurations described above, it is possible to prevent the luminance from deteriorating due to a deterioration of the organic luminescent layer, and further, it is possible to maintain the current that flows to the light emitting element to a desired value without depending on the characteristics of the TFT.

The present disclosure provides a photosensitive device. The photosensitive device includes a donor-intermix-acceptor (PIN) structure. The PIN structure includes an organic hole transport layer; an organic electron transport layer; and an intermix layer sandwiched between the hole transport organic material layer and the electron transport organic material layer. The intermix layer includes a mixture of an n-type organic material and a p-type organic material.

In an embodiment, a light emissive window assembly for providing illumination to an occupant compartment of an automobile comprises a window panel comprising a transparent viewing area and an emissive area, wherein the emissive area is configured to emit light into the occupant compartment and the transparent viewing area is not configured to emit light; wherein the emissive area comprises an abrasion resistant layer, an ultraviolet protective layer, a base layer, and an emissive layer; wherein the ultraviolet protective layer is located in between the abrasion resistant layer and the base layer; and wherein the base layer is located in between the ultraviolet protective layer and the emissive layer.

A light emitting element includes a first electrode, a hole transport region on the first electrode, an emission layer on the hole transport region and containing a light emitting polymer compound derived from a mixture of a polyphenylene vinylene-based compound having a weight average molecular weight of about 1.310.sup.6 to about 1.610.sup.6 and an organic compound represented by Formula 1, and a second electrode on the emission layer, wherein, the mixture contains the polyphenylene vinylene-based compound and the organic compound in a molar ratio of about 9:1 to about 8:2, and the light emitting element may thus include an emission layer having improved flexibility and strength. ##STR00001##

A light-emitting device includes an HTL including a metal chalcogenide between an anode and an EML, with an IL including an organic material at least between the HTL and the EML. A distance between the HTL and the EML in a light-emitting element that emits light in a wavelength band having the shortest light emission peak wavelength is greater than a distance between the HTL and the EML in each of the other light-emitting elements.

Described is an apparatus forming complementary tunneling field effect transistors (TFETs) using oxide and/or organic semiconductor material. One type of TFET comprises: a substrate; a doped first region, formed above the substrate, having p-type material selected from a group consisting of Group III-V, IV-IV, and IV of a periodic table; a doped second region, formed above the substrate, having transparent oxide n-type semiconductor material; and a gate stack coupled to the doped first and second regions. Another type of TFET comprises: a substrate; a doped first region, formed above the substrate, having p-type organic semiconductor material; a doped second region, formed above the substrate, having n-type oxide semiconductor material; and a gate stack coupled to the doped source and drain regions. In another example, TFET is made using organic only semiconductor materials for active regions.