A bioFET cell for measuring a time dependent characteristic of an analyte bearing fluid includes a source, a drain, a semiconductive single wall carbon nanotube network layer extending between the source and drain electrodes and electrically coupled there between, a gate insulatively spaced from and disposed over and extending between the source and drain electrodes, a layer of at least one selected antibody disposed on and linked to the polymer layer to functionalize the semiconductive single wall carbon nanotube network layer to a selected target biomarker corresponding to the at least one selected antibody so that electron transport into the semiconductive single wall carbon nanotube network layer is facilitated, where the source, drain and gate electrodes with the carbon nanotube network layer form a defined channel through which the analyte bearing fluid may flow, and a high impedance source follower amplifier coupled to the source electrode.

A method of making a carbon nanotube structure includes depositing a first oxide layer on a substrate and a second oxide layer on the first oxide layer; etching a trench through the second oxide layer; removing end portions of the first oxide layer and portions of the substrate beneath the end portions to form cavities in the substrate; depositing a metal in the cavities to form first body metal pads; disposing a carbon nanotube on the first body metal pads and the first oxide layer such that ends of the carbon nanotube contact each of the first body metal layers; depositing a metal to form second body metal pads on the first body metal pads at the ends of the carbon nanotube; and etching to release the carbon nanotube, first body metal pads, and second body metal pads from the substrate, first oxide layer, and second oxide layer.

The present invention is a photovoltaic-thermoelectric solar cell and a method of manufacturing a photovoltaic-thermoelectric solar cell. The solar cell includes a substantially transparent electrode, an organometallic photovoltaic material disposed on the transparent electrode, and a cathode disposed on the organometallic photovoltaic material. The organometallic photovoltaic material may be a porphyrin nanomaterial.

The invention relates to a method for manufacturing an electronic device, particularly a device including a flexible and/or low-cost substrate and/or carbon nanotubes, and also relates to electronic devices produced using said method. The method for manufacturing an electronic device, including a substrate mad of a material M and an active semiconductor material layer (3), includes the following steps: a) providing a carrier (10) made of an alkali metal salt or alkaline earth metal salt, preferably sodium chloride (NaCl) or potassium chloride (KCl); optionally, b) depositing a dielectric material layer (2) onto one surface of the carrier; c) forming an active semiconductor material layer (3) on one surface of the carrier when Step b) is not implemented or on the free surface of the layer when Step b) is implemented; d) forming different components of the electronic device on and/or under the layer; e) depositing a protective layer onto the layer stack, obtained in Step d), of the different components of the electronic device, said protective layer being made of the material M required for the substrate (1); and f) removing the carrier (10) by dissolving one or more of the components of said electronic device on a substrate different from the substrate (1). In said removal of the carrier, the method does not include any step for manufacturing one or more of the components of said electronic device on a substrate different from the substrate (1). The invention is of use in the field of electronics in particular.

A carbon nanotube composite has an organic substance attached to at least a part of a surface thereof. At least one functional group selected from a hydroxyl group, a carboxy group, an amino group, a mercapto group, a sulfo group, a phosphonic acid group, an organic or inorganic salt thereof, a formyl group, a maleimide group and a succinimide group is contained in at least a part of the carbon nanotube composite.

A method of fabricating a carbon nanotube based device, including forming a trench having a bottom surface and sidewalls on a substrate, selectively depositing a bi-functional compound having two reactive moieties in the trench, wherein a first of the two reactive moieties selectively binds to the bottom surface, converting a second of the two reactive moieties to a diazonium salt; and reacting the diazonium salt with a dispersion of carbon nanotubes to form a carbon nanotube layer bound to the bottom surface of the trench.

The present invention relates to near-infrared quantum emitters, and in particular carbon nanostructures with chemically incorporated fluorescent defects, and methods of synthesizing near-infrared emitting nanostructures.

A method of fabricating a carbon nanotube based device, including forming a trench having a bottom surface and sidewalls on a substrate, selectively depositing a bi-functional compound having two reactive moieties in the trench, wherein a first of the two reactive moieties selectively binds to the bottom surface, converting a second of the two reactive moieties to a diazonium salt; and reacting the diazonium salt with a dispersion of carbon nanotubes to form a carbon nanotube layer bound to the bottom surface of the trench.

A solid-liquid-solid phase transformation (SLSPT) approach is used for fabrication of perovskite periodic nanostructures. The pattern on a mold is replicated by perovskite through phase change of perovskite from initially solid state, then to liquid state, and finally to solid state. The LED comprising perovskite periodic nanostructure shows better performance than that with flat perovskite. Further, the perovskite periodic nanostructure from SLSPT can be applied in many optoelectronic devices, such as solar cells, light emitting diodes (LED), laser diodes, transistors, and photodetectors.

A field-effect transistor comprises, on a substrate, a source electrode, a drain electrode, and a gate electrode; a semiconductor layer in contact with the source electrode and the drain electrode; wires individually electrically connected to the source electrode and the drain electrode; and a gate insulating layer that insulates the semiconductor layer from the gate electrode, wherein a connecting portion between the source electrode and the wire forms a continuous phase, and a connecting portion between the drain electrode and the wire forms a continuous phase, the portions constituting the continuous phases contain at least an electrically conductive component and an organic component, and integrated values of optical reflectance at a region of a wavelength of 600 nm or more and 900 nm or less on the wires are higher than integrated values of optical reflectance at a region of a wavelength of 600 nm or more and 900 nm or less on the source electrode and the drain electrode.