An OLED device structure, an OLED display panel and a display device are provided. The OLED device structure includes: a first electrode; a self-assembled layer, disposed on the first electrode; a first transportation layer, disposed on the self-assembled layer; a light-emitting layer, disposed on the first transportation layer; a second transportation layer, disposed on the light-emitting layer; and a second electrode, disposed on the second transportation layer. The OLED display panel and the display device each include the OLED device structure. By setting a self-oriented self-assembled layer in the OLED device structure and selecting specific materials, advantages can be achieved as follows: an injection efficiency of hole is improved, a driving voltage is reduced, mobilities of electron and hole are increased, a luminous efficiency is increased, an external light coupling efficiency is increased, a light extraction rate is increased, and an external quantum efficiency is improved.

Provided are an organometallic compound of Formula 1, an organic light-emitting device including the organometallic compound, and a diagnostic composition including the organometallic compound.

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In Formula 1, ring A.sub.1, ring A.sub.3, and ring A.sub.4 are each independently a C.sub.5-C.sub.30 carbocyclic group or a C.sub.2-C.sub.60 heterocyclic group, and ring A.sub.2 is an N-containing 5-membered heterocyclic group.

Provided are novel C.sub.3-symmetry high T.sub.1 energy host compounds. Also provided are formulations comprising these novel C.sub.3-symmetry high T.sub.1 energy host compounds. Further provided are OLEDs and related consumer products that utilize these novel C.sub.3-symmetry high T.sub.1 energy host compounds. The novel host compounds are represented by Formula I

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where the variables are defined herein.

A pixel circuit is operable in initialization, data programming, a threshold compensation, and emission phases. The pixel circuit includes a drive transistor configured to control an amount of current to a light-emitting device during the emission phase depending upon a voltage applied to a gate of the drive transistor. A first ultra-low leakage oxide transistor is employed as a data switch device, and the data voltage is applied to the gate of the drive transistor through the first ultra-low leakage oxide transistor during the data programming phase. A second ultra-low leakage oxide transistor is employed as an initialization switch device. The second ultra-low leakage oxide transistor is in an on state during the initialization, data programming, and threshold compensation phases, and the initialization voltage is applied to the gate of the drive transistor through the second ultra-low leakage oxide transistor during the initialization phase.

An organic electroluminescence device of an embodiment includes a first electrode and a second electrode facing the first electrode, and a plurality of organic layers between the first electrode and the second electrode, wherein at least one selected from among the organic layers includes a fused polycyclic compound represented by Formula 1 below, thereby showing improved emission efficiency.

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A pixel circuit is operable in initialization, data programming, threshold compensation, and emission phases. The pixel circuit includes a drive transistor configured to control an amount of current to a light-emitting device during the emission phase depending upon a voltage applied to a gate of the drive transistor. A first ultra-low leakage oxide transistor is employed as a data switch device, and the data voltage is applied to the gate of the drive transistor through the first ultra-low leakage oxide transistor during the data programming phase. A second ultra-low leakage oxide transistor is employed as an initialization switch device. The second ultra-low leakage oxide transistor is in an on state during the initialization, data programming, and threshold compensation phases, and the initialization voltage is applied to the gate of the drive transistor through the second ultra-low leakage oxide transistor during the initialization phase.

Disclosed are a quantum dot material, a method for patterning a quantum dot film and a quantum dot light emitting device. when preparing a patterned quantum dot film, firstly, a quantum dot film is made by using the quantum dot material with the photolysis group, and a corresponding region of the quantum dot film is irradiated with ultraviolet light under the shielding of a mask template, so that the photolysis group in the corresponding region is photolyzed into the polarity change group, thereby changing the solubility of the quantum dot material in the corresponding region; and subsequently, the quantum dot film is cleaned by using a solvent which can dissolve the quantum dot material with the photolysis group, the quantum dot material in non-irradiated regions is dissolved and removed, and the quantum dot material in the corresponding region is retained to form a pattern of the quantum dot film.

Metal complexes containing heteroaryl and its analogues as ligands are disclosed in this application. These compounds may be useful as charge transport materials in OLEDs.

Disclosed are a method for preparing a series of carbazole derivatives and use thereof in organic light-emitting diodes. The structure of the material is as shown in Formula I. An organic electroluminescent device prepared by the material can have a significantly improved power efficiency and an external quantum efficiency for the device and an extended life for an orange light or red light device; moreover, the material has characteristics, for example, methods for the synthesis and purification of the material are simple and suitable for large-scale production, and is an ideal choice as a luminescent material for organic electroluminescent devices. The use of the organic electroluminescent diode material as a carrier transport material or as a luminescent material alone or as a host material in a light-emitting layer also falls within the scope of protection. ##STR00001##

The present invention provides a quantum dot light emitting diode comprising i) an emitting layer of at least one semiconductor nanoparticle made from semiconductor materials selected from the group consisting of Group II-VI compounds, Group II-V compounds, Group III-VI compounds, Group III-V compounds, Group IV-VI compounds, Group I-III-VI compounds, Group II-IV-VI compounds, Group II-IV-V compounds, or any combination thereof; and ii) a polymer for hole injection or hole transport layer, comprising one or more triaryl aminium radical cations having the structure (S1).