A light-harvesting material comprises a perovskite absorber doped with a metal chalcogenide. The light-harvesting material may be used in a photovoltaic device, comprising (1) a first conductive layer, (2) an optional blocking layer, on the first conductive layer, (3) a semiconductor layer, on the first conductive layer, (4) a light-harvesting material, on the semiconductor layer, (5) a hole transport material, on the light-harvesting material, and (6) a second conductive layer, on the hole transport material.

A quantum dot light emitting diode according to various embodiments of the present disclosure includes a first electrode and a second electrode that are opposite to each other; a light emitting layer that is located between the first electrode and the second electrode and includes a quantum dot; and an electron transport layer that is arranged between the first electrode and the light emitting layer and includes a metal oxide thin film, wherein the metal oxide thin film has a composition including at least one selected from the group consisting of In.sub.2O.sub.3, ZnO, SiO.sub.2 and SnO.sub.2.

A display device may include a first sub-pixel including a first light emitting element disposed in a first sub-pixel area of a substrate, a second sub-pixel including a second light emitting element disposed in a second sub-pixel area located in a first direction with respect to the first sub-pixel area of the substrate, a bank layer disposed between the first and second sub-pixels, a first color filter pattern disposed on the first sub-pixel and the bank layer, and a second color filter pattern disposed on the second sub-pixel and the bank layer. The first light emitting element may emit light having a first color. The second light emitting element may emit light having a second color. The first color filter pattern and the second color filter pattern may at least partially overlap each other on the bank layer.

The present invention disclosed a squaraine dye of formula (I) and process for the preparation thereof. Further, the present invention disclosed to an electronic device comprising dye of formula (I).

A terminal device includes a display screen module, wherein the display screen module comprises a passive matrix organic light-emitting diode (PMOLED) display panel, and an electrode cable of the PMOLED display panel comprises a transparent cable and a camera, wherein an orthographic projection of a lighting region of the camera on a display surface of a PMOLED display panel is located in the display region in which the transparent cable is located.

Provided is a solar cell comprising a first electrode, a second electrode, a light-absorbing layer located between the first electrode and the second electrode, and an electron transport layer located between the first electrode and the light-absorbing layer. At least one electrode selected from the group consisting of the first electrode and the second electrode has light-transmissive property. The light-absorbing layer contains a perovskite compound represented by a chemical formula ASnX.sub.3 (where A is a monovalent cation and X is a halogen anion). The electron transport layer contains an electron transport material including Ti and Zn. A difference between energy levels of lower ends of conduction bands of the electron transport material and the perovskite compound is less than 0.42 eV.

A display device and a method of manufacturing the display device are provided. The display device comprises a pixel which is connected to a scan line and a data line intersecting the scan line, wherein the pixel comprises a light emitting element and a driving transistor controlling a driving current, which is supplied to the light emitting element, according to a data voltage received from the data line, wherein the driving transistor comprises a first active layer having an oxide semiconductor containing tin (Sn).

A light-emitting device includes: a first electrode; a second electrode facing the first electrode; and an interlayer between the first electrode and the second electrode and including an emission layer, a hole transport region between the first electrode and the emission layer, and an electron transport region between the emission layer and the second electrode, wherein the hole transport region includes a hole injection layer and a hole transport layer, sequentially arranged between the first electrode and the emission layer, the first electrode includes aluminum, an alloy including aluminum, or any combination thereof, the hole injection layer consists of a first inorganic material as described herein, and an absolute value of a work function of the first inorganic material is greater than or equal to an absolute value of a HOMO energy level of the hole transport layer, and the hole transport region excludes a p-dopant.

Systems, methods, and structures for improving the performance of thin-film electronic devices, in particular organic LEDs (OLEDs) used in lighting, are disclosed. Enhanced substrates, upon which OLED devices may be deposited, incorporate various structures for extracting light trapped in the device stack and substrate. The substrates provide an improved transparent electrode layer. Methods for forming planarized buried extraction structures to reduce disruption to the deposited device stack layers are disclosed, as are methods for providing smooth, planarized buried metal mesh conductors.

A display apparatus includes a first substrate, a second substrate, and a transistor. The first transistor includes a polymer resin. The second substrate is arranged between the first substrate and the transistor and includes a glass material. A liquidus temperature of the glass material is less than 1000° C. The transistor overlaps at least one of the first substrate and the second substrate and includes a semiconductor layer.