A thermoelectric module that has excellent thermal, electric properties, can realize high joining force between thermoelectric elements and an electrode, and can maintain stable joining even at a high temperature.

A thermoelectric module includes an N-type thermoelectric material and a P-type thermoelectric material disposed so as to be spaced apart from the N-type thermoelectric material. A flexible electrode is electrically connected to the N-type thermoelectric material and the P-type thermoelectric material. The flexible electrode is configured to bend to match a curvature of an object, e.g., a steering wheel of a vehicle.

Embodiments relate to methods of manufacturing and operating nano-scale energy converters and electric power generators. The nano-scale energy converters include two electrodes separated a predetermined distance. The first electrode is manufactured to have a first work function value. The second electrode is manufactured to have a second work function value different from the first work function value. A cavity is formed between the first and second electrodes, and a nanofluid is disposed in the cavity. The nanofluid includes a plurality of nanoparticles.

PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device with an electric power generation function, which can prevent the circuit board from increasing in size.

MEANS TO SOLVE THE PROBLEM: A semiconductor integrated circuit device 200 with an electric power generation function has a semiconductor integrated circuit device and a thermoelectric element 1. The semiconductor integrated circuit device includes a package 210 to house a semiconductor integrated circuit chip 230. The semiconductor integrated circuit chip 230 has a lower surface opposing the circuit board and an upper surface opposing the mounting surface. The thermoelectric element 1 includes a casing unit having a housing unit, a first electrode unit provided inside the housing unit, a second electrode unit provided inside the housing unit, separated from and opposing the first electrode unit in the first direction, and having a work function different from that of the first electrode unit, and a middle unit provided between the first electrode unit and the second electrode unit, and including a nanoparticle having a work function between the work function of the first electrode unit and the work function of the second electrode unit, in the housing unit. The casing unit is provided on the upper surface side of the semiconductor integrated circuit chip 230.

A thermoelectric module according to an exemplary embodiment includes a first metal substrate including a first through-hole, a first insulating layer disposed on the first metal substrate, a first electrode part disposed on the first insulating layer and including a plurality of first electrodes, a plurality of P-type thermoelectric legs and a plurality of N-type thermoelectric legs disposed on the first electrode part, a second electrode part disposed on the plurality of P-type thermoelectric legs and the plurality of N-type thermoelectric legs and including a plurality of second electrodes, a second insulating layer disposed on the second electrode part, and a second metal substrate disposed on the second insulating layer and including a second through-hole, wherein the first metal substrate includes an effective region in which the first electrode part is disposed and a peripheral region formed outside the effective region, the second metal substrate includes an effective region in which the second electrode part is disposed and a peripheral region formed outside the effective region, the first through-hole occupies a portion of the effective region of the first metal substrate, the second through-hole occupies a portion of the effective region of the second metal substrate, and the first through-hole and the second through-hole are formed at positions corresponding to each other.

A thermoelectric module according to an exemplary embodiment includes a first metal substrate including a first through-hole, a first insulating layer disposed on the first metal substrate, a first electrode part disposed on the first insulating layer and including a plurality of first electrodes, a plurality of P-type thermoelectric legs and a plurality of N-type thermoelectric legs disposed on the first electrode part, a second electrode part disposed on the plurality of P-type thermoelectric legs and the plurality of N-type thermoelectric legs and including a plurality of second electrodes, a second insulating layer disposed on the second electrode part, and a second metal substrate disposed on the second insulating layer and including a second through-hole, wherein the first metal substrate includes an effective region in which the first electrode part is disposed and a peripheral region formed outside the effective region, the second metal substrate includes an effective region in which the second electrode part is disposed and a peripheral region formed outside the effective region, the first through-hole occupies a portion of the effective region of the first metal substrate, the second through-hole occupies a portion of the effective region of the second metal substrate, and the first through-hole and the second through-hole are formed at positions corresponding to each other.

A thermoelectric module, a frame for the thermoelectric module, and a vehicle including the thermoelectric module is provided. The thermoelectric module includes a frame alternately bent toward a hot side on which a heat source is located and a cool side on which a cooling medium is located, to have a plurality of hot-side end portions in contact with the heat source, a plurality of cool-side end portions in contact with the cooling medium, and a plurality of thermoelectric element installation portions connecting the plurality of hot-side end portions and the plurality of cool-side end portions, a plurality of n-type and p-type thermoelectric elements arranged on the thermoelectric element installation portions, and a plurality of first electrodes and second electrodes that electrically connect, in series, the plurality of n-type and p-type thermoelectric elements arranged on each of the thermoelectric element installation portions.

A thermoelectric module including at least a first and a second thermoelectric element comprising a thermoelectric semiconductor; an electrode connecting the first and second thermoelectric elements; and at least a first and a second joining layer, the first joining layer positioned between the first thermoelectric element and the electrode, and the second joining layer positioned between the second thermoelectric element and the electrode; and at least a first and a second barrier layer including an alloy including Cu, Mo and Ti, the first barrier layer positioned between the first thermoelectric element and the first joining layer, and the second barrier layer positioned between the second thermoelectric element and the second joining layer. The module prevents heat diffusion of the material of the joining layer, preventing the oxidation and deformation of the thermoelectric element under high temperature environment, and exhibiting improved operational stability due to excellent adhesion to a thermoelectric element.

According to an embodiment, the present invention comprises: a first electrode; a first conductive bonding member disposed on the first electrode; and a plurality of semiconductor structures disposed on the first conductive bonding member, wherein the first conductive bonding member comprises first arrangement portions on which the plurality of semiconductor structures are arranged, respectively, and a first barrier portion positioned between the first arrangement portions, wherein the thickness of the first barrier portion is 2.5 times or less than the thickness of the first arrangement portion.

According to an embodiment, the present invention comprises: a first electrode; a first conductive bonding member disposed on the first electrode; and a plurality of semiconductor structures disposed on the first conductive bonding member, wherein the first conductive bonding member comprises first arrangement portions on which the plurality of semiconductor structures are arranged, respectively, and a first barrier portion positioned between the first arrangement portions, wherein the thickness of the first barrier portion is 2.5 times or less than the thickness of the first arrangement portion.