Patent classifications
H10N10/857
TIN OXIDE-BASED THERMOELECTRIC DEVICE
A thermoelectric module comprising nanostructured SnO and SnO.sub.2, and electrodes arranged between two electrical insulating substrates is described. The nanostructured SnO may be in the form of nanosheets and acting as p-type pillars of the module. The nanostructured SnO.sub.2 may be in the form of nanospheres and acting as n-type pillars of the module. This thermoelectric module is evaluated on the voltage, current, and power of the electricity generated once subjected to a temperature gradient.
THERMOELECTRIC CONVERSION MATERIAL, THERMOELECTRIC CONVERSION ELEMENT, THERMOELECTRIC CONVERSION MODULE AND OPTICAL SENSOR
A thermoelectric conversion material contains a matrix composed of a semiconductor and nanoparticles disposed in the matrix, and the nanoparticles have a lattice constant distribution Δd/d of 0.0055 or more.
THERMOELECTRIC ELEMENTS AND DEVICES WITH ENHANCED MAXIMUM TEMPERATURE DIFFERENCES BASED ON SPATIALLY VARYING DISTRIBUTED TRANSPORT PROPERTIES
Provided herein is a thermoelectric element that includes a cold end, a hot end, and a p-type or n-type material having a length between the hot end and the cold end. The p-type or n-type material has an intrinsic Seebeck coefficient (S), an electrical resistivity (ρ), and a thermal conductivity (λ). Each of two or more of S, ρ, and λ generally increases along the length from the cold end to the hot end. The thermoelectric element may be provided in single-stage thermoelectric devices providing enhanced maximum temperature differences. The single-stage thermoelectric devices maybe combined with one another to provide multi-stage thermoelectric devices with even further enhanced maximum temperature differences.
Thermoelectric power generator and combustion apparatus
A small-scale thermoelectric power generator and combustion apparatus, components thereof, methods for making the same, and applications thereof. The thermoelectric power generator can include a burner including a matrix stabilized combustion chamber comprising a catalytically enhanced, porous flame containment portion. The combustion apparatus can include components connected in a loop configuration including a vaporization chamber; a mixing chamber connected to the vaporization chamber; a combustion chamber connected to the vaporization chamber; and a heat exchanger connected to the combustion chamber. The combustion chamber can include a porous combustion material which can include a unique catalytic material.
Method of Manufacturing and Operating Nano-Scale Energy Conversion Device
Embodiments relate to methods of manufacturing and operating nano-scale energy converters and electric power generators. The nano-scale energy converters include two electrodes separated a predetermined distance. The first electrode is manufactured to have a first work function value. The second electrode is manufactured to have a second work function value different from the first work function value. A cavity is formed between the first and second electrodes, and a nanofluid is disposed in the cavity. The nanofluid includes a plurality of nanoparticles.
Thermoelectric leg and thermoelectric element comprising same
A method may be provided of manufacturing a thermoelectric leg. The method may include preparing a first metal substrate including a first metal, and forming a first plated layer including a second metal on the first metal substrate. The method may also include disposing a layer including tellurium (Te) on the first plated layer, and forming a portion of the first plated layer as a first bonding layer by reacting the second metal and the Te. The method also includes disposing a thermoelectric material layer including bismuth (Bi) and Te on an upper surface of the first bonding layer, and disposing a second metal substrate, on which a second bonding layer and a second plated layer are formed, on the thermoelectric material layer, and sintering.
THERMOELECTRIC DEVICE WITH SEEBECK EFFECT
The invention relates to a porous thermoelectric material (5; 5a, 5b): having, at 20° C. and at atmospheric pressure, a thermal conductivity of less than 100 mW/(m.Math.K) and an electrical conductivity of between 20 S/m and 10.sup.5 S/m, and comprising a matrix of a thermal insulating material which has a porosity of more than 70%, and which may be filled at least locally with an electrically conductive material (5b), the content of the electrically conductive material being comprised between 0% and 90% by weight of the total weight of the thermal insulating material.
THERMOELECTRIC POLYMER FILM, MANUFACTURING METHOD THEREOF, POWER SUPPLY DEVICE AND TEMPERATURE CONTROL DEVICE
A method for manufacturing a thermoelectric polymer film includes steps as follows . A conductive polymer liquid and a plurality of carbon nanotubes are mixed to form a mixture. The mixture is coated on a substrate to form a film precursor. Two electrode parts are arranged on the film precursor. An electric field is applied to the film precursor through the two electrode parts at a room temperature, so as to change an arrangement of the plurality of carbon nanotubes, such that the thermoelectric polymer film is formed.
THERMOELECTRIC POLYMER FILM, MANUFACTURING METHOD THEREOF, POWER SUPPLY DEVICE AND TEMPERATURE CONTROL DEVICE
A method for manufacturing a thermoelectric polymer film includes steps as follows . A conductive polymer liquid and a plurality of carbon nanotubes are mixed to form a mixture. The mixture is coated on a substrate to form a film precursor. Two electrode parts are arranged on the film precursor. An electric field is applied to the film precursor through the two electrode parts at a room temperature, so as to change an arrangement of the plurality of carbon nanotubes, such that the thermoelectric polymer film is formed.
Thermoelectric conversion material, thermoelectric conversion element, thermoelectric conversion module, and optical sensor
A thermoelectric conversion material includes: a base material that is a semiconductor composed of a base material element; a first additional element that is an element different from the base material element, has a vacant orbital in a d orbital or f orbital located internal to an outermost shell of the first additional element and forms a first additional level in a forbidden band of the base material; and a second additional element that is an element different from both of the base material element and the first additional element and forms a second additional level in the forbidden band of the base material. A difference is 1 between the number of electrons in an outermost shell of the second additional element and the number of electrons in at least one outermost shell of the base material element.