A piezoelectric actuator of a multilayer design includes outer electrodes that are fastened by means of a bonding layer applied by thermal spraying. For example, the outer electrodes are formed as a woven wire fabric. Furthermore, a method for fastening an outer electrode in a piezoelectric actuator is specified.

The invention relates to a pump having a piezo diaphragm transducer arranged at a pump body of the pump, and to a method for producing a pump, wherein a piezo diaphragm transducer is mounted to a pump body, wherein the method, among other things, has providing a piezoceramic layer. In accordance with the invention, at least one piezo element is diced from the piezoceramic layer so that the at least one piezo element has a regular polygon shape having at least six corners. In addition, the method has forming the piezo diaphragm transducer by mounting the piezo element to a pump diaphragm.

Described herein is a method of bonding a piezoelectric substrate to a support substrate to form a composite substrate. The piezoelectric substrate has one surface which is positively polarized, and a second surface which is negatively polarized. The method described herein includes the steps of bonding the positively polarized surface of the piezoelectric substrate to one surface of the support substrate by a direct bonding method.

Provided is a method of manufacturing an ultrasound probe. The method includes: preparing a backing layer having first and second surfaces with different heights due to forming a groove in the backing layer, wherein first and second electrodes are exposed on the first and second surfaces, respectively; forming a third electrode that is in contact with the first electrode; forming a base piezoelectric unit on the third electrode, the base piezoelectric unit including a piezoelectric layer; forming a piezoelectric unit by removing an upper region of the base piezoelectric unit; and forming a fourth electrode on the backing layer and the piezoelectric unit.

An integrated structure of a crystal resonator and a control circuit (110) and an integrated method therefor. Integration of the crystal resonator with the control circuit (110) is accomplished by forming, in a device wafer (100) containing the control circuit, a lower cavity (120) with an opening exposed at a back side of the device wafer (100), forming a piezoelectric vibrator (500) on the back side of the device wafer (100) and electrically connecting the piezoelectric vibrator (500) to the control circuit (110) in the device wafer (100) from the back side of the device wafer (100). The crystal resonator is more compact in size, less power-consuming and easier to integrate with other semiconductor components with a higher degree of integration.

Stack assembly for radio-frequency applications. In some embodiments, a radio-frequency (RF) module can include a packaging substrate configured to receive a plurality of components, and an electro-acoustic device mounted on the packaging substrate. The RF module can further include a die having an integrated circuit and mounted over the electro-acoustic device to form a stack assembly. The electro-acoustic device can be, for example, a filter device such as a surface acoustic wave filter. The die can be, for example an amplifier die such as a low-noise amplifier implemented on a silicon die.

A hybrid sensor includes a piezoresistive element for sensing an applied force, a piezoelectric micromachined ultrasonic transducer (PMUT) for sensing the presence of an object within a threshold distance of the hybrid sensor, and a substrate onto which both the piezoresistive element and the PMUT are disposed.

A hybrid sensor includes a piezoresistive element for sensing an applied force, a piezoelectric micromachined ultrasonic transducer (PMUT) for sensing the presence of an object within a threshold distance of the hybrid sensor, and a substrate onto which both the piezoresistive element and the PMUT are disposed.

A sensor apparatus includes a first of a plurality of layers having a top layer, a bottom layer, and at least one intermediate layer having an electrical conductor layer, each of the top layer, the bottom layer, and the at least one intermediate layer is disposed in direct contact with a respective adjacent layer. A second of the plurality of layers is disposed in direct contact with the first plurality of layers such that the bottom layer of the second plurality of layers is disposed in direct contact with the top layer of the first plurality of layers. The first and second plurality of layers are productive of a piezoelectric voltage absent of an external current producing device and in response to being deformed, and are productive of a change in capacitance in response to being deformed.

A sensor apparatus includes a first of a plurality of layers having a top layer, a bottom layer, and at least one intermediate layer having an electrical conductor layer, each of the top layer, the bottom layer, and the at least one intermediate layer is disposed in direct contact with a respective adjacent layer. A second of the plurality of layers is disposed in direct contact with the first plurality of layers such that the bottom layer of the second plurality of layers is disposed in direct contact with the top layer of the first plurality of layers. The first and second plurality of layers are productive of a piezoelectric voltage absent of an external current producing device and in response to being deformed, and are productive of a change in capacitance in response to being deformed.