A composite substrate 10 includes a first substrate 10 comprised of a piezoelectric single crystal and a second substrate 20 comprised of a silicon single crystal bonded to the first substrate 10. In the second substrate, a planar orientation is (111), and ψ of Euler angles (φ, θ, ψ) is offset from 0°. Due to this, a bulk wave spurious is reduced in a specific frequency band.

An energy producing device includes a piezoelectric layer having a first side and second side opposite of the first side, a first electrical contact arranged on the first side of the piezoelectric layer, a second electrical contact arranged on the second side of the piezoelectric layer, and a counter-layer arranged on the second electrical contact. The piezoelectric layer, first and second electrical contacts, and counter-layer form a beam having a neutral axis outside of the piezoelectric layer.

An energy producing device includes a piezoelectric layer having a first side and second side opposite of the first side, a first electrical contact arranged on the first side of the piezoelectric layer, a second electrical contact arranged on the second side of the piezoelectric layer, and a counter-layer arranged on the second electrical contact. The piezoelectric layer, first and second electrical contacts, and counter-layer form a beam having a neutral axis outside of the piezoelectric layer.

A bonded body includes a supporting substrate, piezoelectric material substrate and a multilayer film, between the supporting substrate and piezoelectric material substrate. The multilayer film includes a lamination structure having a first layer, second layer, third layer and fourth layer in the order. The first layer and third layer are composed of silicon oxides, and the second layer and fourth layer are composed of metal oxides. The refractive index of the second layer is higher than the refractive index of the first layer and refractive index of the third layer. The refractive index of the second layer is different from the refractive index of the fourth layer.

An article including a support unit, the support unit including a support substrate and a bonding layer such that the bonding layer is bonded to a surface of the support substrate. Furthermore, a total thickness variation TTV across a width of the support unit is about 2.0 microns or less.

Techniques for joining dissimilar materials in microelectronics are provided. Example techniques direct-bond dissimilar materials at an ambient room temperature, using a thin oxide, carbide, nitride, carbonitride, or oxynitride intermediary with a thickness between 100-1000 nanometers. The intermediary may comprise silicon. The dissimilar materials may have significantly different coefficients of thermal expansion (CTEs) and/or significantly different crystal-lattice unit cell geometries or dimensions, conventionally resulting in too much strain to make direct-bonding feasible. A curing period at ambient room temperature after the direct bonding of dissimilar materials allows direct bonds to strengthen by over 200%. A relatively low temperature anneal applied slowly at a rate of 1° C. temperature increase per minute, or less, further strengthens and consolidates the direct bonds. The example techniques can direct-bond lithium tantalate LiTaO.sub.3 to various conventional substrates in a process for making various novel optical and acoustic devices.

The present invention provides: a piezoelectric substrate which includes a first piezoelectric body having an elongated shape and helically wound in one direction, and which does not include a core material, in which the first piezoelectric body includes a helical chiral polymer (A) having an optical activity; in which the length direction of the first piezoelectric body is substantially parallel to the main direction of orientation of the helical chiral polymer (A) included in the first piezoelectric body; and in which the first piezoelectric body has a degree of orientation F, as measured by X-ray diffraction according to the following Equation (a), within the range of 0.5 or more but less than 1.0:
degree of orientation F=(180°−α)/180°  (a)
(in which α represents the half-value width of the peak derived from the orientation).

The present invention provides: a piezoelectric substrate which includes a first piezoelectric body having an elongated shape and helically wound in one direction, and which does not include a core material, in which the first piezoelectric body includes a helical chiral polymer (A) having an optical activity; in which the length direction of the first piezoelectric body is substantially parallel to the main direction of orientation of the helical chiral polymer (A) included in the first piezoelectric body; and in which the first piezoelectric body has a degree of orientation F, as measured by X-ray diffraction according to the following Equation (a), within the range of 0.5 or more but less than 1.0:
degree of orientation F=(180°−α)/180°  (a)
(in which α represents the half-value width of the peak derived from the orientation).

A method and structure for a single crystal acoustic electronic device. The device includes a substrate having an enhancement layer formed overlying its surface region, a support layer formed overlying the enhancement layer, and an air cavity formed through a portion of the support layer. A single crystal piezoelectric material is formed overlying the air cavity and a portion of the enhancement layer. Also, a first electrode material coupled to the backside surface region of the crystal piezoelectric material and spatially configured within the cavity. A second electrode material is formed overlying the topside of the piezoelectric material, and a dielectric layer formed overlying the second electrode material. Further, one or more shunt layers can be formed around the perimeter of a resonator region of the device to connect the piezoelectric material to the enhancement layer.

Energy harvesting device comprising: a first layer (1) of electrically conductive textile fabric material; a second layer (2) of electrically conductive textile fabric material; a layer of piezoelectric polymer film (3) arranged between the first (1) and the second (2) electrically conductive textile layers; wherein the piezoelectric polymer film layer (3) is laminated between the first (1) and second (2) electrically conductive textile layer.