A method of forming a piezoelectric thin film can include depositing a material on a first surface of a Si substrate to provide a stress neutral template layer. A piezoelectric thin film including a Group III element and nitrogen can be sputtered onto the stress neutral template layer and a second surface of the Si substrate that is opposite the first surface can be processed to remove that Si substrate and the stress neutral template layer to provide a remaining portion of the piezoelectric thin film. A piezoelectric resonator can be formed on the remaining portion of the piezoelectric thin film.

The present invention relates to a zinc oxide-based piezoelectric device, utilizable both as a sensor and as an actuator. More in particular, the present invention relates to a piezoelectric device (1, 101) comprising at least two carbon fibre crossed yarns (2a, 2b; 102a, 102b), at the intersection of which a zinc oxide layer (3, 103) in nanorod form is arranged, wherein an end (4a, 4b) of each of said yarns (2a, 2b; 102a, 102b) is connected to an operative unit (5).

A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.

Provided are a piezoelectric device and a method of fabricating the same and the piezoelectric device may include a substrate including a 3-dimensional pattern surface layer; and a piezoelectric material layer, which is formed on the pattern surface layer and forms a 3-dimensional interface with the pattern surface layer.

Broadband ultrasound transducers and related methods are disclosed herein. An example ultrasonic transducer disclosed herein includes a substrate and a first membrane supported by the substrate. The first membrane is to exhibit a first frequency response when oscillated. The example ultrasonic transducer includes a second membrane supported by the substrate. The second membrane is to exhibit a second frequency response different from the first frequency response when oscillated. The example ultrasonic transducer includes a third membrane supported by the substrate. The third membrane is to exhibit one of the second frequency response or a third frequency response different from the first frequency response and the second frequency response when oscillated. A shape of the first membrane is to differ from a shape of the second membrane and a shape of the third membrane.

To enhance properties of a ferromagnetic film formed on a substrate. One aspect of the present invention is a film structure body having a single crystal substrate, and a first ferromagnetic film oriented and formed on the single crystal substrate.

The invention relates to a method for manufacturing an electroacoustic resonator comprising the steps of: Providing a first substrate having a first side and an opposite second side; depositing a diamond layer having a first side and an opposite second side on said first substrate, wherein the second side of the diamond layer is in contact with said first side of the first substrate; removing the first substrate; forming a piezoelectric layer on the second side of the diamond layer; applying a second substrate to the first side of the diamond layer.

Techniques are disclosed for monolithic co-integration of thin-film bulk acoustic resonator (TFBAR, also called FBAR) devices and III-N semiconductor transistor devices. In accordance with some embodiments, one or more TFBAR devices including a polycrystalline layer of a piezoelectric III-N semiconductor material may be formed alongside one or more III-N semiconductor transistor devices including a monocrystalline layer of III-N semiconductor material, over a commonly shared semiconductor substrate. In some embodiments, either (or both) the monocrystalline and the polycrystalline layers may include gallium nitride (GaN), for example. In accordance with some embodiments, the monocrystalline and polycrystalline layers may be formed simultaneously over the shared substrate, for instance, via an epitaxial or other suitable process. This simultaneous formation may simplify the overall fabrication process, realizing cost and time savings, at least in some instances.

A method for manufacturing a piezoelectric device that includes a substrate, a piezoelectric layer directly or indirectly supported by the substrate and arranged above the substrate, a heater, and a heater electrode for driving the heater. Moreover, the method includes forming the piezoelectric layer, the heater, and the heater electrode and subjecting the piezoelectric device to heat treatment with heat generated from the heater by driving the heater by feeding electric power to the heater electrode.

A method for producing an ultrasonic transducer or ultrasonic transducer array, the method comprising providing or depositing a layer of piezoelectric material on a substrate. The piezoelectric material is a doped, co-deposited or alloyed piezoelectric material. The piezoelectric material comprises: a doped, co-deposited or alloyed metal oxide or metal nitride, the metal oxide or metal nitride being doped, co-deposited or alloyed with vanadium or a compound thereof; or zinc oxide doped, co-deposited or alloyed with a transition metal or a compound thereof. Optionally, the deposition of the layer of piezoelectric material is by sputter coating, e.g. using a sputtering target that comprises a doped or alloyed piezoelectric material. In examples, the layer of piezoelectric material is deposited onto the substrate using high power impulse magnetron sputtering (HIPIMS). Further enhancement may be obtained using substrate biasing (e.g. DC and/or RF) during deposition of the layer of piezoelectric material. In further examples, the substrate is provided on a rotating drum whilst tire layer of piezoelectric material is being deposited.