A method for fabricating a piezoelectric transducer includes depositing a layer of a piezoelectric material on a base using a depositor and applying an electric field to the layer of deposited piezoelectric material in defined locations using an electrode to sinter and pole the deposited piezoelectric material at those defined locations to form a layer of the piezoelectric transducer in a selected shape and with a selected dipole direction.

An apparatus and methods to make a product using supersonic cold-spray deposition of brittle functional materials in fine and micro features down to 10 μm in minimum dimension. The process may use semiconductors such as bismuth and antimony telluride formulations, and hard magnetic materials such as neodymium iron boride and strontium ferrite, and soft magnetic materials such as manganese zinc ferrite, and manganese ferrite materials. In addition, the methods and processes have been demonstrated for materials as soft as graphite and as hard as boron carbide. Micro components have been deposited in square, tapered and elongated shaped features with feature sizes as small as 10 μm in minimum dimensions and applied to flat and highly complex shaped surfaces. This process when combined with other cold spray manufacturing processes allows the total additive manufacturing of complete electronic, magnetic and other complex devices including multiple type of brittle functional materials.

A transducer of the preferred embodiment including a transducer and a plurality of adjacent, tapered cantilevered beams. Each of the beams define a beam base, a beam tip, and a beam body disposed between the beam base and the beam tip. The beams are arranged such that each of the beam tips extends toward a common area. Each beam is joined to the substrate along the beam base and is free from the substrate along the beam body. A preferred method of manufacturing a transducer can include: depositing alternating layers of piezoelectric and electrode onto the substrate in block, processing the deposited layers to define cantilever geometry in block, depositing metal traces in block, and releasing the cantilevered beams from the substrate in block.

A method for manufacturing an element forming wafer includes the steps of: forming a thin layer on a semiconductor wafer having a plurality of chip forming regions; and adjusting stress generated in an element forming portion of the thin layer to have a specified value. The thin layer constitutes an element in each of the plurality of chip forming regions. The step of adjusting the stress includes: arranging a resist on the thin layer; exposing the resist to light using a photomask having openings; forming openings in the resist by developing the resist; and performing ion-implantation using the resist as a mask. The photomask used during the step of exposing the resist to light has a ratio of the openings that is adjusted based on the stress generated in the element forming portion.

There are provided an acoustic wave transducing unit and a method for manufacturing the same, and an acoustic wave transducer. The acoustic wave transducing unit includes: a substrate; a first electrode on the substrate; a supporting portion on a side of the first electrode away from the substrate; a diaphragm layer on a side of the supporting portion away from the substrate; a release hole penetrating through at least the diaphragm layer; the supporting portion, the diaphragm layer and the first electrode define a vibration chamber, the vibration chamber is communicated with the release hole, the supporting portion is lattice-matched with the first electrode, the supporting portion is lattice-matched with the diaphragm layer; a material of the supporting portion can be decomposed into a metal simple substance and a gas under an action of laser; Photon Energy of the supporting portion is smaller than that of the diaphragm layer.

Provided is a piezoelectric material which is free of lead, has small temperature dependence of a piezoelectric constant and has a satisfactory piezoelectric constant. The piezoelectric material includes: an oxide having a perovskite-type structure containing Ba, Ca, Ti, and Zr; Mn; Bi; and W, wherein a ratio of the sum of the Ba and the Ca with respect to the sum of the Ti and the Zr is 0.986 or more and 1.02 or less, and wherein, with respect to 100 parts by mass of the oxide, a content of the Mn is 0.040 part by mass or more and 0.360 part by mass or less, a content of the Bi is 0.050 part by mass or more and 0.240 part by mass or less, and a content of the W is 0.100 part by mass or more and 0.380 part by mass or less.

A MEMS device and a manufacturing method thereof. The manufacturing method comprises: forming a CMOS circuit; and forming a MEMS module on the CMOS circuit which is coupling to the MEMS module and configured to drive the MEMS module. Forming the MEMS module comprises: forming a protective layer; forming a sacrificial layer in the protective layer; forming a first electrode on the protective layer and on the sacrificial layer so that the first electrode covers the sacrificial layer, and electrically coupling the first electrode to the CMOS circuit; forming a piezoelectric layer on the first electrode and above the sacrificial layer; forming a second electrode on the piezoelectric layer and electrically coupling the second electrode to the CMOS circuit; forming a through hole to reach the sacrificial layer; and forming a cavity by removing the sacrificial layer through the through hole.

Disclosed herein are microelectronic assemblies with integrated perovskite layers, and related devices and methods. For example, in some embodiments, a microelectronic assembly may include an organic package substrate portion having a surface with a conductive layer, and a perovskite conductive layer on the conductive layer. In some embodiments, a microelectronic assembly may include an organic package substrate portion having a surface with a conductive layer, a perovskite conductive layer having a first crystalline structure on the conductive layer, and a perovskite dielectric layer having a second crystalline structure on the perovskite conductive layer. In some embodiments, the first and second crystalline structures have a same orientation.

An ultrasonic fingerprint recognition assembly is provided. The ultrasonic fingerprint recognition assembly includes a cover plate, a display panel, and an ultrasonic sensor disposed between the cover plate and the display panel. The ultrasonic sensor includes a thin film transistor (TFT) substrate which is close to the display panel, and a piezoelectric layer and a conductive layer which are disposed on the TFT substrate sequentially. The piezoelectric layer is obtained by mixing a piezoelectric material with an organic solvent, coating a mixture of the piezoelectric material and the organic solvent on a substrate, and conducting crystallization and polarization treatment. The organic solvent includes at least one of: butanone, propylene glycol monomethyl ether acetate, and dimethylacetamide.

A piezoelectric artificial artery can be 3D printed to provide the real-time precise sensing of blood pressure and vessel motion patterns enabling early detection of partial occlusions. An electric-field assisted 3D printing method allows for rapid printing and simultaneously poled complex ferroelectric structures with high fidelity and good piezoelectric performance. The print material consists of ferroelectric potassium sodium niobite (KNN) particles embedded within a ferroelectric polyvinylidene fluoride (PVDF) polymer matrix.