There is provided a method for producing a piezoelectric element, which allows for forming a columnar microstructure with a small width and a high aspect ratio. The method is intended to produce a piezoelectric element 102 including a three-dimensional structure group 20 having a plurality of the three-dimensional structures 21 and 321 formed in a plate-like or columnar shape with a width of 30 μm or less and a height of 80 μm or more. The production method includes a first process of fabricating a plurality of plate-like or columnar precursor shapes 82a on a bulk material 81 formed of a Pb-based piezoelectric material, and a second process of reducing the width of the precursor shapes 82a to a predetermined value using an etching liquid.

A piezoelectric element includes a first electrode layer, a piezoelectric layer, and a second electrode layer. The first electrode layer, the piezoelectric layer, and the second electrode layer are stacked in sequence on one another. The first electrode layer has a first part overlapping the piezoelectric layer in a plan view, and a second part at least partially separated from the first part and not overlapping the piezoelectric layer in the plan view. The second electrode layer has a third part overlapping the piezoelectric layer in the plan view, and a fourth part separated from the third part. The fourth part is in contact with the first part and the second part.

Disclosed is a method of manufacturing ultrasonic sensors. The method includes forming a micropattern having concave and convex portions on an etchable substrate, filling a piezoelectric material in the concave portions of the micropattern, pressurizing the filled piezoelectric material, sintering the piezoelectric material to form preliminary piezoelectric bodies, re-sintering the preliminary piezoelectric bodies to form densely packed unit piezoelectric bodies, and forming electrode terminals at both ends of each of the unit piezoelectric bodies to produce a unit piezoelectric cell. The method enables the manufacture of high-quality ultrasonic sensors in high yield.

A structure comprising a semiconductor substrate and a layer of PZT (lead zirconate titanate) is etched by performing a first plasma etch step with a first etch process gas mixture. The first etch process gas mixture comprises at least one fluorine containing species. The first plasma etch step is performed so that involatile metal etch products are deposited onto interior surfaces of the chamber. The structure is further etched by performing a second plasma etch step with a second etch process gas mixture. The second etch process gas mixture comprises at least one fluorocarbon species. The second plasma etch step is performed so that a fluorocarbon polymer layer is deposited onto interior surfaces of the chamber to overlay involatile metal etch products deposited in the first plasma etch step and to provide a substrate on which further involatile metal etch products can be deposited.

A liquid discharging head includes a pressure chamber partitioning portion that includes a plurality of partitioning walls that partition a pressure chamber in which a pressure to discharge a liquid is applied to the liquid, a diaphragm that includes a wall surface that faces the pressure chamber. The pressure chamber is located between the partitioning walls in a second direction. The wall surface of the diaphragm includes a first portion at a first position, and a second portion. A position of the second portion in the first direction is on an opposite side in the first direction with respect to a position of the first portion in the first direction.

A sensor for obtaining downhole data includes a first piezoelectric layer. The sensor also includes a second piezoelectric layer having a trench extending a depth below a surface of the second piezoelectric layer. The sensor also includes an electrode positioned within the trench. The first piezoelectric layer is directly coupled to the second piezoelectric layer.

A linear or rotary step motor for moving an object comprising: one or more beam actuators; and one or more auxiliary actuators. Each beam actuator comprises: (a) a flexible beam; (b) two holders holding the flexible beam from the beam edges; and (c) an actuator for moving the said at least one holder in order to bent the beam toward the object or to pull the beam away from the object. The axillary actuators are connected to the one or more beam actuators. The beam actuators configured to grip or release the object, and the one or more beam actuators perform a movement step to the object by first grip the object by the one or more beam actuators then push the object by activating the auxiliary actuator.

A wafer level ultrasonic device includes a composite layer, a first conductive layer, a second conductive layer, a base, a first electrical connection region, and a second electrical connection region. The composite layer includes an ultrasonic element and a protective layer. The ultrasonic element includes a first electrode and a second electrode. The protective layer has a first connecting channel and a second connecting channel respectively corresponding to the first electrode and the second electrode. The first conductive layer and the second conductive layer are respectively in the first connecting channel and the second connecting channel to connect the first electrode and the second electrode. The base includes an opening forming a closed cavity with the protective layer. The first electrical connection region and the second electrical connection region are respectively filled with metal materials to electrically connect the first conductive layer and the second conductive layer.

A microelectronic device including a substrate including, in a stack, a base portion, a dielectric portion and an upper layer with a semi-conductive material base, at least one electrical connection element made of an electrically conductive material located above the upper layer and electrically insulated from the upper layer at least by a dielectric layer, the dielectric layer being in contact with the surface of the upper layer, at least one dielectric element including at least one trench forming a closed edge at the periphery or upright of at least one portion of the dielectric electrical connection element, located at least partially in the upper layer and delimiting a closed zone of said upper layer, at least one dielectric element having a portion exposed to the surface of the upper layer, device wherein the dielectric layer totally covers the exposed portion of at least one dielectric element.

A piezoelectric device includes: a base having at least one hole, a heat conductive portion disposed in the at least one hole and in contact with a wall of the at least one hole, and at least one piezoelectric sensor disposed on the base. A thermal conductivity of the heat conductive portion is greater than a thermal conductivity of the base. Each piezoelectric sensor includes: a first electrode, a piezoelectric pattern made of a piezoelectric material and a second electrode that are sequentially stacked in a thickness direction of the base.