A manufacturing method of miniature fluid actuator is disclosed and includes the following steps. A flow-channel main body manufactured by a CMOS process is provided, and an actuating unit is formed by a deposition process, a photolithography process and an etching process. Then, at least one flow channel is formed by etching, and a vibration layer and a central through hole are formed by a photolithography process and an etching process. After that, an orifice layer is provided to form at least one outflow opening by an etching process, and then a chamber is formed by rolling a dry film material on the orifice layer. Finally, the orifice layer and the flow-channel main body are flip-chip aligned and hot-pressed, and then the miniature fluid actuator is obtained by a flip-chip alignment process and a hot pressing process.

Methods for fabricating flexible substrate nanostructured devices are disclosed. The nanostructures comprise nano-pillars and metallic bulbs or nano-apertures. The nanostructures can be functionalized to detect biological entities. The flexible substrates can be rolled into cylindrical tubes for detection of fluidic samples.

A vibration detection element (10) includes substrates (1 to 3), a support member (22), a support member (32), and an oscillator (4). The substrates (1 to 3) have a space portion (SP) having a bottom surface (21A) and a bottom surface (31A) opposed to the bottom surface (21A). The support member (22) protrudes from the bottom surface (21A) toward the bottom surface (31A) of the space portion (SP). The support member (32) protrudes from the bottom surface (31A) toward the bottom surface (21A) of the space portion. The oscillator (4) is disposed in contact with the support member (22) or the support member (32) and capable of vibrating in the space portion (SP) and has a thickness less than 10 μm. The support members (22, 32) each include multiple supports which prevent the oscillator (4) from contacting the bottom surface (21A) or the bottom surface (31A).

A piezoelectric element for an automatic frequency control circuit, the element including: a balance spring formed of a strip of piezoelectric material; at least a first electrode, configured to be connected to the circuit and being disposed on all or part of one side of the strip; at least a second electrode configured to be connected to the circuit and being disposed on all or part of another one side of the strip distinct from the one side on which the first electrode is disposed, the piezoelectric material being a piezoelectric crystal or a piezoelectric ceramic; and at least two discontinuous layers of an insulating material, each discontinuous layer being disposed on at least one side of the strip and separating the first electrode from the second electrode, the layers of insulating material being distributed on predetermined portions of the balance spring substantially forming arcs in a predetermined angular periodicity.

Embodiments of the invention include a piezo-electric mirror in an microelectronic package and methods of forming the package. According to an embodiment the microelectronic package may include an organic substrate with a cavity formed in the organic substrate. In some embodiments, an actuator is anchored to the organic substrate and extends over the cavity. For example, the actuator may include a first electrode and a piezo-electric layer formed on the first electrode. A second electrode may be formed on the piezo-electric layer. Additionally, a mirror may be formed on the actuator. Embodiments allow for the piezo-electric layer to be formed on an organic package substrate by using low temperature crystallization processes. For example, the piezo-electric layer may be deposited in an amorphous state. Thereafter, a laser annealing process that includes a pulsed laser may be used to crystallize the piezo-electric layer.

A subtractive forming method that includes providing a material stack including a samarium and selenium containing layer and an aluminum containing layer in direct contact with the samarium and selenium containing layer. The samarium component of the samarium and selenium containing layer of the exposed portion of the material stack is etched with an etch chemistry comprising citric acid and hydrogen peroxide that is selective to the aluminum containing layer. The hydrogen peroxide reacts with the aluminum containing layer to provide an oxide etch protectant surface on the aluminum containing layer, and the citric acid etches samarium selectively to the oxide etch protectant surface. Thereafter, a remaining selenium component of is removed by elevating a temperature of the selenium component.

An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

Several types of piezoelectric MEMS vibration energy harvesters are described herein as well as methods of fabricating the vibration energy harvesters. The vibration energy harvesters generally comprise a serpentine structure having a central longitudinal axis; a piezoelectric film deposited on a surface of the serpentine structure; a central mass located at a mid-portion of the central longitudinal axis; two lateral masses positioned at opposing corners of the serpentine structure; anchor points at two other opposing corners of the serpentine structure; and upper and lower electrode layers. The energy harvesters have a 180 degree rotational symmetry about the central mass and when the serpentine structure experiences a strain, the piezoelectric film generates a voltage. The geometry of the energy harvesters allows for lower frequency and wider bandwidth operation as well as higher power density.

Disclosed is a method of manufacturing a piezoelectric thin film resonator on a non-silicon substrate, including the following steps: depositing a copper thin film on a silicon wafer; coating photoresist on the copper thin film to perform photoetching so as to remove photoresist in an air gap region under the piezoelectric thin film resonator to be disposed; electroplating-depositing a copper layer, and removing photoresist to obtain a stepped peel sacrifice layer; coating polyimide and performing imidization by heat treatment, making a sandwich structure of the piezoelectric thin film resonator above the polyimide layer; performing etching for the polyimide layer in a region not covered by the piezoelectric thin film resonator by oxygen plasma; placing the obtained device into a copper corrosion solution to dissolve the copper around and under the piezoelectric thin film resonator, attaching a drum coated with polyvinyl alcohol glue onto the piezoelectric thin film resonator, releasing and peeling it from the silicon wafer and then transferring it to a desired non-silicon substrate; washing the drum with hot water to separate the drum from the piezoelectric thin film resonator so as to complete the manufacturing process.

A piezoelectric device including a substrate, a metal-insulator-metal element, a hydrogen blocking layer, a passivation layer, a first contact terminal and a second contact terminal is provided. The metal-insulator-metal element is disposed on the substrate. The hydrogen blocking layer is disposed on the metal-insulator-metal element. The passivation layer covers the hydrogen blocking layer and the metal-insulator-metal element. The first contact terminal is electrically connected to the metal-insulator-metal element. The second contact terminal is electrically connected to the metal-insulator-metal element.