This method for manufacturing a piezoelectric film includes: a coating step of obtaining a coated film by coating a coating solution on a substrate, wherein the coating solution includes at least lead, zirconium, and titanium, a content ratio of the zirconium and the titanium is in a range of 54:46 to 40:60 in terms of molar ratio, and a perovskite crystal phase is generated by heating the coating solution at a temperature equal to or higher than a crystallization initiation temperature; a drying step of obtaining a dried film by drying the coated film; a first calcining step of obtaining a first calcined film; a second calcining step of obtaining a second calcined film; and a main firing step of obtaining a piezoelectric film by heating the second calcined film at a main firing temperature.

Aspects of the present disclosure describe systems, methods, and structures that scavenge mechanical energy to provide electrical energy to a wearable, where the mechanical energy is scavenged by a bending-strain-based transducer that includes a non-resonant energy harvester. By employing a non-resonant energy harvester that operates in bending mode, more electrical energy can be generated that possible with prior-art energy harvesters. In some embodiments the bending-strain-based transducer also includes a sensor and/or a haptic device. Some transducers in accordance with the present disclosure comprise a piezoelectric layer comprising a low-K piezoelectric material, such as aluminum nitride, which enables generation of higher voltage and power/energy output and/or a thinner transducer. As a result, transducers in accordance with the present disclosure can be included in wearables for which large transducer thickness would be problematic, such as sole members (e.g., shoe insoles, midsoles or outsoles), garments, bras, handbags, backpacks, and the like.

A material deposition method comprising: preparing a precursor solution of Pb(Zr.sub.x,Ti.sub.1-x)O.sub.3 using 1-methoxy-2-propanol as a solvent and acetylacetone as a modifier; and forming a seed layer for a electroactive film by spin coating the precursor solution on a substrate. The electroactive film can be PZT, PZO or BFO, spin-coated or inkjet printed on the seed layer. Experience shows pure orientation for the piezoelectric film thanks to the use of 1-methoxy-2-propanol when preparing the seed layer. This orientation is attributed to the formation of nano crystals on the seed layer constituting a pre-crystallization.

A material deposition method comprising: preparing a precursor solution of Pb(Zr.sub.x,Ti.sub.1-x)O.sub.3 using 1-methoxy-2-propanol as a solvent and acetylacetone as a modifier; and forming a seed layer for a electroactive film by spin coating the precursor solution on a substrate. The electroactive film can be PZT, PZO or BFO, spin-coated or inkjet printed on the seed layer. Experience shows pure orientation for the piezoelectric film thanks to the use of 1-methoxy-2-propanol when preparing the seed layer. This orientation is attributed to the formation of nano crystals on the seed layer constituting a pre-crystallization.

Aspects of the present disclosure describe systems, methods, and structures that scavenge mechanical energy to provide electrical energy to a wearable, where the mechanical energy is scavenged by a bending-strain-based transducer that includes a non-resonant energy harvester. By employing a non-resonant energy harvester that operates in bending mode, more electrical energy can be generated that possible with prior-art energy harvesters. In some embodiments the bending-strain-based transducer also includes a sensor and/or a haptic device. Some transducers in accordance with the present disclosure comprise a piezoelectric layer comprising a low-K piezoelectric material, such as aluminum nitride, which enables generation of higher voltage and power/energy output and/or a thinner transducer. As a result, transducers in accordance with the present disclosure can be included in wearables for which large transducer thickness would be problematic, such as shoe insoles, midsoles or outsoles, garments, bras, handbags, backpacks, and the like.

Provided is a piezoelectric single crystal comprising an internal bias electric field, a method of manufacturing the same, and piezoelectric and dielectric application components using the piezoelectric single crystal. The piezoelectric single crystal shows that as a change in each composition of [A] site ions, [B] site ions and [O] site ions from a perovskite type crystal structure ( [A] [B] O.sub.3), and oxygen partial-pressure during heat treatment in terms of a manufacturing process are controlled, while maintaining the inherent high dielectric constant and piezoelectric constant, the high internal bias electric field (EI) characteristic essential for the electrical stability of the piezoelectric single crystal is simultaneously satisfied. Therefore, piezoelectric application components and dielectric application components using the piezoelectric single crystal having excellent characteristics can be used in a wide temperature range and operating voltage conditions.

Disclosed are methods and apparatus for depositing uniform layers on a substrate (201) for piezoelectric applications. An ultra-thin seed layer (308) having a uniform thickness from center to edge thereof is deposited on a substrate (201). A template layer (310) closely matching the crystal structure of a subsequently formed piezoelectric material layer (312) is deposited on a substrate (201). The uniform thickness and orientation of the seed layer (308) and the template layer (310), in turn, facilitate the growth of piezoelectric materials with improved crystallinity and piezoelectric properties.

Disclosed are methods and apparatus for depositing uniform layers on a substrate (201) for piezoelectric applications. An ultra-thin seed layer (308) having a uniform thickness from center to edge thereof is deposited on a substrate (201). A template layer (310) closely matching the crystal structure of a subsequently formed piezoelectric material layer (312) is deposited on a substrate (201). The uniform thickness and orientation of the seed layer (308) and the template layer (310), in turn, facilitate the growth of piezoelectric materials with improved crystallinity and piezoelectric properties.

A piezoelectric film integrated device include a substrate; a first electrode provided on the substrate; a second electrode provided on the substrate; a first monocrystalline piezoelectric film provided on the first electrode; a second monocrystalline piezoelectric film provided on the second electrode and having a crystal structure different from a crystal structure of the first monocrystalline piezoelectric film; a third electrode provided on the first monocrystalline piezoelectric film; and a fourth electrode provided on the second monocrystalline piezoelectric film.

A piezoelectric film integrated device include a substrate; a first electrode provided on the substrate; a second electrode provided on the substrate; a first monocrystalline piezoelectric film provided on the first electrode; a second monocrystalline piezoelectric film provided on the second electrode and having a crystal structure different from a crystal structure of the first monocrystalline piezoelectric film; a third electrode provided on the first monocrystalline piezoelectric film; and a fourth electrode provided on the second monocrystalline piezoelectric film.