An electromechanical-transducing electronic component includes at least one element array of electromechanical transducer elements. A piezoelectric material of each transducer element is made of a composite oxide having a perovskite structure preferentially oriented to at least one of (100) and (001) planes and has a drop of diffraction intensity in a rocking curve corresponding to at least one of (200) and (002) planes measured at a position (2?=?max) of a diffraction peak intensity P where the diffraction intensity is largest in a diffraction intensity peak corresponding to the at least one of the (200) and (002) planes out of diffraction intensity peaks measured by an X-ray diffraction ?-2? method. ?P/P.sub.AVE is 20% or less where P.sub.AVE represents an average of the intensity P in the element array in the piezoelectric material of each transducer element and ?P represents a maximum difference of the intensity P in the array.

Disclosed is a method for manufacturing a piezoelectric Al.sub.xGa.sub.1-xN (0.5?x?1) thin film, comprising: forming a stress control layer comprised of a Group III nitride on a silicon substrate by chemical vapor deposition (CVD); and depositing a piezoelectric Al.sub.xGa.sub.1-xN (0.5?x?1) thin film on the stress control layer, the thin film being deposited by PVD at 0.3 Tm (Tm is melting temperature of a piezoelectric thin film material) or higher. Further, a method for manufacturing a device in conjunction with piezoelectric Al.sub.xGa.sub.1-xN (0.5?x?1) thin films is provided.

A piezoelectric element includes a substrate and a laminate which is provided on the substrate and which includes a first electrode, a seed layer, a piezoelectric layer, and a second electrode in this order, and the seed layer includes a composite oxide containing as a constituent element, lead, iron, and titanium.

A piezoelectric element includes a first electrode, a second electrode, a piezoelectric layer which is provided between the first electrode and the second electrode, and is formed of a perovskite type oxide including at least one selected from the group consisting of potassium, sodium, bismuth, and niobium, a first perovskite layer which is provided between the piezoelectric layer and the first electrode, and is formed of a perovskite type oxide having a composition different from that of the piezoelectric layer, and a second perovskite layer which is provided between the piezoelectric layer and the second electrode, and is formed of a perovskite type oxide having a composition different from that of the piezoelectric layer.

A device for harvesting energy from a fluidic flow, including a flexible structure formed by: a base layer; a conductive layer, made of a conductive material and laid on the base layer; and a piezoelectric layer, made of a piezoelectric material and laid on the conductive layer. The base layer, the conductive layer, and the piezoelectric layer form a crystalline structure including a plurality of pseudomorphic portions.

A filter package comprising an array of piezoelectric films sandwiched between lower electrodes and an array of upper electrodes covered by an array of silicon membranes with cavities thereover: the lower electrode being coupled to an interposer with a first cavity between the lower electrodes and the interposer; the array of silicon membranes having a known thickness and attached over the upper electrodes with an array of upper cavities, each upper cavity between a silicon membrane of the array and a common silicon cover; each upper cavity aligned with a piezoelectric film, an upper electrode and silicon membrane, the upper cavities having side walls comprising SiO.sub.2; the individual piezoelectric films, their upper electrodes and silicon membranes thereover being separated from adjacent piezoelectric films, upper electrodes and silicon membranes by a passivation material.

The present disclosure is drawn to a thin film stack including a substrate, a metal layer, and an adhesive layer. The adhesive layer comprises a blend of zinc oxide and tin oxide, and the adhesive layer is adhered between the substrate and the metal layer.

A piezoelectric element has, from a substrate side, a first electrode, a piezoelectric layer containing a composite oxide of an ABO.sub.3 type perovskite structure containing Mg, and a second electrode, which are laminated, in which the first electrode includes a diffusion suppressing layer which suppresses diffusion of the Mg and a diffusion layer which diffuses the Mg as compared with the diffusion suppressing layer, and the diffusion suppressing layer is provided on the substrate side relative to the diffusion layer.

An inkjet printing head includes a piezoelectric element having a lower electrode, a piezoelectric film formed above the lower electrode, and an upper electrode formed above the piezoelectric film, a hydrogen barrier film covering an entirety of a side surface of the upper electrode and the piezoelectric film, and an interlayer insulating film that has an opening at an upper surface center of the upper electrode, is laminated on the hydrogen barrier film, and faces the entirety of the side surface of the upper electrode and the piezoelectric film across the hydrogen barrier film.

An inkjet head configured to eject inkjet ink includes a piezoelectric layer of a thin film and a diaphragm. An absolute value of a product of a piezoelectric constant d.sub.31 of the piezoelectric layer and a Young's modulus of the piezoelectric layer is 10 [C/m.sup.2] to 15 [C/m.sup.2]. Even when the inkjet head ejects ink having a high viscosity, variation of driving voltage during ejection can be suppressed.