A manufacturing method of a piezoelectric element includes forming an adhesive layer of a lead electrode on a piezoelectric element main body of a vibration plate, forming a metallic layer of the lead electrode on the adhesive layer, removing the metallic layer to leave the adhesive layer in a portion that corresponds to an extended electrode of the lead electrode using etching, patterning the remaining adhesive layer as individual extended electrodes that correspond to the piezoelectric element main body using etching, joining a protective substrate onto the vibration plate in a state in which the piezoelectric element main body is accommodated inside an accommodation hollow section and the extended electrode is positioned further on an outer side of the vibration plate than the protective substrate, layering and forming a section of the wiring on the protective substrate and the extended electrode, and patterning the wiring as individual wiring for each extended electrode using etching.

A method for manufacturing a crystal film including: forming a Zr film on a substrate heated to 700? C. or more by a vapor deposition method using a vapor deposition material having a Zr single crystal; forming a ZrO.sub.2 film on said Zr film on a substrate heated to 700? C. or more, by a vapor deposition method using said vapor deposition material having a Zr single crystal, and oxygen; and forming a Y.sub.2O.sub.3 film on said ZrO.sub.2 film on a substrate heated to 700? C. or more, by a vapor deposition method using a vapor deposition material having Y, and oxygen.

An electromechanical transducer element includes a lower electrode, an electromechanical transducer film of a piezoelectric material, and an upper electrode which are laminated. A diffraction intensity peak profile of the film obtained by measurement in which a tilt angle is changed in a position where diffraction intensity of a peak profile corresponding to a {200} plane among peak profiles of the film obtained by measurement according to an X-ray diffraction ?-2? method is the maximum can be separated into three peak profiles. When peak intensities of the peak profiles are set to peak1, peak2, and peak3 and half-value widths of the peak profiles are set to ?1, ?2, and ?3, a weighted average FWHMstd(?) of the peak intensities using the half-value widths as weights (=(?1?peak1+?2?peak2+?3?peak3)/(peak1+peak2+peak3)) is equal to or less than 12?.

An aspect of the present invention relates to ferroelectric ceramics including a stacked film formed on a Si substrate, a Pt film formed on the stacked film, a SrTiO.sub.3 film formed on the Pt film, and a PZT film formed on the SrTiO.sub.3, wherein the stacked film is formed by repeating sequentially N times a first ZrO.sub.2 film and a Y.sub.2O.sub.3 film, and a second ZrO.sub.2 film is formed on the film formed repeatedly N times, the N being an integer of 1 or more. It is preferable that a ratio of Y/(Zr+Y) of the stacked film is 30% or less.

A semiconductor device includes a buffer layer formed with a semiconductor adapted to produce piezoelectric polarization, and a channel layer stacked on the buffer layer, wherein a two-dimensional hole gas, generated in the channel layer by piezoelectric polarization of the buffer layer, is used as a carrier of the channel layer. On a complementary semiconductor device, the semiconductor device described above and an n-type field effect transistor are formed on the same compound semiconductor substrate. Also, a level shift circuit is manufactured by using the semiconductor device. Further, a semiconductor device manufacturing method includes forming a compound semiconductor base portion, forming a buffer layer on the base portion, forming a channel layer on the buffer layer, forming a gate on the channel layer, and forming a drain and source with the gate therebetween on the channel layer.

Provided is a piezoelectric device including: a substrate (10) on which a plurality of recesses (12) are provided; a vibrating plate (50) which is provided on one surface side of the substrate; and a piezoelectric element (300) which is provided over the vibrating plate (50) and on which a first electrode (60), a piezoelectric layer (70), and a second electrode (80) are laminated from the substrate (10) side, in which the first electrode (60) is formed to have a first width which is smaller than a dimension of the recess in a parallel arrangement direction in the parallel arrangement direction of at least one recess (12), and the piezoelectric layer (70) is extended to the outer side of the first electrode (60) in the parallel arrangement direction and has a second width which is greater than the first width and smaller than a width of the recess (12) in the parallel arrangement direction, the vibrating plate (50) contains a zirconium oxide layer (52), and when an area of the zirconium oxide layer (52) corresponding to the first electrode having the first width is set as a first area (p), areas of the zirconium oxide layer (52) corresponding to areas where the piezoelectric layer (70) is provided on the outer side of the first area (p) in the parallel arrangement direction are set as second areas (q), and areas of the zirconium oxide layer (52) corresponding to the recess (12) on the outer side of the second areas (q) in the parallel arrangement direction are set as third areas (r), the zirconium oxide layer (52) contains particulate crystal in the first area (p) at least on the first electrode (60) side in the thickness direction and contains columnar crystal in the third areas (r).

A filter package comprising an array of piezoelectric films sandwiched between lower electrodes and an array of upper electrodes covered by an array of silicon membranes with cavities thereover: the lower electrode being coupled to an interposer with a first cavity between the lower electrodes and the interposer; the array of silicon membranes having a known thickness and attached over the upper electrodes with an array of upper cavities, each upper cavity between a silicon membrane of the array and a common silicon cover; each upper cavity aligned with a piezoelectric film, an upper electrode and silicon membrane, the upper cavities having side walls comprising SiO.sub.2; the individual piezoelectric films, their upper electrodes and silicon membranes thereover being separated from adjacent piezoelectric films, upper electrodes and silicon membranes by a passivation material.

A vibration apparatus may include a vibration device and an adhesive member at a surface of the vibration device. A modulus of the vibration device may be equal to a modulus of the adhesive member or may be greater than the modulus of the adhesive member.

A method of forming a film can include heating a CVD reactor chamber containing a substrate to a temperature range between about 750 degrees Centigrade and about 950 degrees Centigrade, providing a first precursor comprising Al to the CVD reactor chamber in the temperature range, providing a second precursor comprising Sc to the CVD reactor chamber in the temperature range, providing a third precursor comprising nitrogen to the CVD reactor chamber in the temperature range, and forming the film comprising ScAlN on the substrate.

The disclosure relates to a hybrid structure for a surface-acoustic-wave device comprising a useful layer of piezoelectric material joined to a carrier substrate having a thermal expansion coefficient lower than that of the useful layer; the hybrid structure comprising an intermediate layer located between the useful layer and the carrier substrate, the intermediate layer being a structured layer formed from at least two different materials comprising a plurality of periodic motifs in the plane of the intermediate layer.