Patent classifications
H10N60/0661
Integrated superconductor device and method of fabrication
An integrated superconductor device may include a substrate base and an intermediate layer disposed on the substrate base and comprising a preferred crystallographic orientation. The integrated superconductor device may further include an oriented superconductor layer disposed on the intermediate layer and a conductive strip disposed on a portion of the oriented superconductor layer. The conductive strip may define a superconductor region of the oriented superconductor layer thereunder, and an exposed region of the oriented superconductor layer adjacent the superconductor region.
Method for creating high-resolution micro- to nano-scale structures in high-temperature superconductor films
A method includes providing a film of a high-temperature superconductor compound on a substrate, where a portion of the film has a first oxygen state, and exposing a portion of the film to a focused ion beam to create a structure within the film. The structure may result from the portion of the film being partially or completely removed. The structure may be a trench along the length or width of the film. The method may include annealing the exposed portion of the film to a second oxygen state. The oxygen content of the second oxygen state may be greater or less than the oxygen content of the first oxygen state.
INTEGRATED SUPERCONDUCTOR DEVICE AND METHOD OF FABRICATION
An integrated superconductor device may include a substrate base and an intermediate layer disposed on the substrate base and comprising a preferred crystallographic orientation. The integrated superconductor device may further include an oriented superconductor layer disposed on the intermediate layer and a conductive strip disposed on a portion of the oriented superconductor layer. The conductive strip may define a superconductor region of the oriented superconductor layer thereunder, and an exposed region of the oriented superconductor layer adjacent the superconductor region.
ULTRA-THIN FILM SUPERCONDUCTING TAPES
An ultra-thin film superconducting tape and method for fabricating same is disclosed. Embodiments are directed to a superconducting tape being fabricated by processes which include removing a portion of the superconducting tape's substrate subsequent the substrate's initial formation, whereby a thickness of the superconducting tape is reduced to 15-80 ?m.
OXIDE SUPERCONDUCTING THIN FILM WIRE AND METHOD FOR PRODUCING THE SAME
A method for producing an oxide superconducting thin film wire having a particular width includes a cutting step of cutting a wide oxide superconducting thin film wire in a longitudinal direction with the particular width, the wide oxide superconducting thin film wire being obtained by forming an oxide superconducting layer above a belt-shaped metal substrate with an intermediate layer disposed therebetween. In the cutting step, the wide oxide superconducting thin film wire is thermally cut in the longitudinal direction with the particular width by irradiating, with infrared laser light, a portion of the wide oxide superconducting thin film wire to be cut.
ULTRA-THIN FILM SUPERCONDUCTING TAPES
An ultra-thin film superconducting tape and method for fabricating same is disclosed. Embodiments are directed to a superconducting tape being fabricated by processes which include removing a portion of the superconducting tape's substrate subsequent the substrate's initial formation, whereby a thickness of the superconducting tape is reduced to 15-80 ?m.
ION IMPLANTATION FOR SUPERCONDUCTOR TAPE FABRICATION
A method of forming a superconductor tape, includes depositing a superconductor layer on a substrate, forming a metal layer comprising a first metal on a surface of the superconductor layer, and implanting an alloy species into the metal layer where the first metal forms a metal alloy after the implanting the alloy species.
Integrated superconductor device and method of fabrication
An integrated superconductor device may include a substrate base and an intermediate layer disposed on the substrate base and comprising a preferred crystallographic orientation. The integrated superconductor device may further include an oriented superconductor layer disposed on the intermediate layer and a conductive strip disposed on a portion of the oriented superconductor layer, The conductive strip may define a superconductor region of the oriented superconductor layer thereunder, and an exposed region of the oriented superconductor layer adjacent the superconductor region.
Laser processing of superconductor layers
A method of forming a superconductor includes exposing a layer disposed on a substrate to an oxygen ambient, and selectively annealing a portion of the layer to form a superconducting region within the layer.
Multi-Filament Superconducting Composites
A configuration and a method of constructing a high-temperature superconductor tape including a plurality superconducting filaments sandwiched between a substrate and an overlayer comprising compliant material extending to the substrate through gaps between each superconducting filament thereby isolating each superconducting filament.