A system includes a substrate, a high-temperature superconductor compound film disposed on the substrate, an array of superconducting regions formed within the film, a plurality of Josephson junctions formed within the film, where each Josephson junction of the plurality of Josephson junctions is formed between adjacent superconducting regions within the array of superconducting regions, and a voltage source connected to the array of superconducting regions. The plurality of Josephson junctions are separated by a distance such that they emit coherent radiation in the terahertz frequency range responsive to a voltage applied to the array of superconducting regions.

The invention relates to a method for manufacturing a Josephson junction comprising a step for providing a substrate, extending along a longitudinal direction, a step for depositing a superconducting layer on the substrate so that this layer extends from the substrate in a transverse direction, perpendicular to the longitudinal direction, and a step for irradiation of ions in a central area of the layer defined in the longitudinal direction, the method being characterized in that it includes, prior to the irradiation step, a step for removing a portion of the central area of the superconducting layer so as to delimit a set of areas of the superconducting layer aligned in the longitudinal direction including the central area and two lateral areas.

According to various implementations of the invention, a vertical Josephson Junction device may be realized using molecular beam epitaxy (MBE) growth of YBCO and PBCO epitaxial layers in an a-axis crystal orientation. Various implementations of the invention provide improved vertical JJ devices using SiC or LSGO substrates; GaN, AlN, or MgO buffer layers; YBCO or LSGO template layers; YBCO conductive layers and various combinations of barrier layers that include PBCO, NBCO, and DBCO. Such JJ devices are simple to fabricate with wet and dry etching, and allow for superior current flow across the barrier layers.

According to various implementations of the invention, a vertical Josephson Junction device may be realized using molecular beam epitaxy (MBE) growth of YBCO and PBCO epitaxial layers in an a-axis crystal orientation. Various implementations of the invention provide improved vertical JJ devices using SiC or LSGO substrates; GaN, AlN, or MgO buffer layers; YBCO or LSGO template layers; YBCO conductive layers and various combinations of barrier layers that include PBCO, NBCO, and DBCO. Such JJ devices are simple to fabricate with wet and dry etching, and allow for superior current flow across the barrier layers.

Nano-scale junctions, wires, and junction arrays are created by using a focused high-energy ion beam to direct-write insulating or poorly conducting barriers into thin films of materials that are sensitive to disorder, including superconductors, ferromagnetic materials and semiconductors.

Disclosed is a charged particle beam system comprising a charged particle beam column having a charged particle source forming a charged particle beam, an objective lens and a first deflection system for changing a position of impingement of the charged particle beam in a sample plane. The system further comprises a sample chamber comprising a sample stage for holding a sample to be processed, and a controller configured to create and store a height map of a sample surface. The controller is further configured to dynamically adjust the objective lens of the charged particle beam in dependence on a position of impingement of the charged particle beam according to the height map.

Disclosed is a charged particle beam system comprising a charged particle beam column having a charged particle source forming a charged particle beam, an objective lens and a first deflection system for changing a position of impingement of the charged particle beam in a sample plane. The system further comprises a sample chamber comprising a sample stage for holding a sample to be processed, and a controller configured to create and store a height map of a sample surface. The controller is further configured to dynamically adjust the objective lens of the charged particle beam in dependence on a position of impingement of the charged particle beam according to the height map.

A joined body includes: a first superconducting layer, a barrier layer arranged on the first superconducting layer, and a second superconducting layer arranged on the barrier layer. The first superconducting layer, the barrier layer, and the second superconducting layer are formed of a REBCO. A leak current from one of the first superconducting layer and the second superconducting layer to the other of the first superconducting layer and the second superconducting layer is blocked by the barrier layer.

A method includes providing a film of a high-temperature superconductor compound on a substrate, where a portion of the film has a first oxygen state, and exposing a portion of the film to a focused ion beam to create a structure within the film. The structure may result from the portion of the film being partially or completely removed. The structure may be a trench along the length or width of the film. The method may include annealing the exposed portion of the film to a second oxygen state. The oxygen content of the second oxygen state may be greater or less than the oxygen content of the first oxygen state.

A device including a Josephson junction device including a first superconductor layer, a first oxide layer disposed on a first upper surface of the first superconductor layer, a second superconductor layer disposed to partially overlap the first superconductor layer, a second oxide layer disposed on a second upper surface of the second superconductor layer, and a third superconductor layer including a first portion facing the first upper surface of the first superconductor layer and a second portion facing the second upper surface of the second superconductor layer, and a first thickness of a first portion of the first oxide layer between a lower surface of the first portion of the third superconductor layer and a third upper surface of the first superconductor layer is less than a second thickness of a second portion of the first oxide layer.