A device is disclosed that includes a substrate, a first superconducting quantum interference device (SQUID), a second SQUID and a third SQUID. The first SQUID is disposed on the substrate and has a first feature dimension, a second feature dimension and a first effective geometric magnetic inductance parameter value, .sub.L1. The second SQUID is disposed on the substrate and has the first feature dimension, a third feature dimension and a second effective geometric magnetic inductance parameter value, .sub.L2. The third SQUID is disposed on the substrate and has the first feature dimension, a fourth feature dimension and a third effective geometric magnetic inductance parameter value, .sub.L3, wherein .sub.L1<.sub.L2<.sub.L3.

A device and method for converting magnetic flux to voltage uses a linear Fraunhofer pattern of a 1D array of long Josephson junctions. The 1D array of Josephson junctions may include from 1 to 10.sup.9 junctions formed in a planar geometry with a bridge width within the range of 4-10 m.

A device includes a plurality of superconducting components, each having a first terminal and a second terminal; a plurality of current sources, being electrically-connected to the first terminal of a corresponding superconducting component and configured to selectively provide a first current; and a bias current source electrically-connected to the respective first terminal of each of the plurality of superconducting components. The bias current source is configured to provide a second current adapted to bias the superconducting components such that (1) a combination of the second current and the first current from each current source causes the plurality of superconducting components to transition from the superconducting state to the non-superconducting state, and (2) a combination of the second current and the first current from each current source of only a subset of the plurality of current sources does not cause the plurality of superconducting components to transition to the non-superconducting state.

A physical vapor deposition system includes a chamber, three target supports to targets, a movable shield positioned having an opening therethrough, a workpiece support to hold a workpiece in the chamber, a gas supply to deliver nitrogen gas and an inert gas to the chamber, a power source, and a controller. The controller is configured to move the shield to position the opening adjacent each target in turn, and at each target cause the power source to apply power sufficient to ignite a plasma in the chamber to cause deposition of a buffer layer, a device layer of a first material that is a metal nitride suitable for use as a superconductor at temperatures above 8 K on the buffer layer, and a capping layer, respectively.

A system includes a substrate having a high-temperature superconductor compound film disposed thereon. A first superconducting region is formed within the film and has a first stabilized oxygen content. A second superconducting region is also formed within the film and is located adjacent to the first superconducting region. The second superconducting region has a second stabilized oxygen content. A boundary region is formed within the film and separates the first superconducting region from the second superconducting region. A voltage source is connected to the first superconducting region and the second superconducting region. The boundary region emits electromagnetic radiation responsive to an applied voltage from the voltage source to one of the first superconducting region and the second superconducting region. A current flows from the first superconducting region to the second superconducting region, or vice versa, responsive to the applied voltage.

According to various implementations of the invention, a vertical Josephson Junction device may be realized using molecular beam epitaxy (MBE) growth of YBCO and PBCO epitaxial layers in an a-axis crystal orientation. Various implementations of the invention provide improved vertical JJ devices using SiC or LSGO substrates; GaN, AlN, or MgO buffer layers; YBCO or LSGO template layers; YBCO conductive layers and various combinations of barrier layers that include PBCO, NBCO, and DBCO. Such JJ devices are simple to fabricate with wet and dry etching, and allow for superior current flow across the barrier layers.

A system includes a substrate, a high-temperature superconductor compound film disposed on the substrate, an array of superconducting regions formed within the film, a plurality of Josephson junctions formed within the film, where each Josephson junction of the plurality of Josephson junctions is formed between adjacent superconducting regions within the array of superconducting regions, and a voltage source connected to the array of superconducting regions. The plurality of Josephson junctions are separated by a distance such that they emit coherent radiation in the terahertz frequency range responsive to a voltage applied to the array of superconducting regions.

The invention relates to a method for manufacturing a Josephson junction comprising a step for providing a substrate, extending along a longitudinal direction, a step for depositing a superconducting layer on the substrate so that this layer extends from the substrate in a transverse direction, perpendicular to the longitudinal direction, and a step for irradiation of ions in a central area of the layer defined in the longitudinal direction, the method being characterized in that it includes, prior to the irradiation step, a step for removing a portion of the central area of the superconducting layer so as to delimit a set of areas of the superconducting layer aligned in the longitudinal direction including the central area and two lateral areas.

According to various implementations of the invention, a vertical Josephson Junction device may be realized using molecular beam epitaxy (MBE) growth of YBCO and PBCO epitaxial layers in an a-axis crystal orientation. Various implementations of the invention provide improved vertical JJ devices using SiC or LSGO substrates; GaN, AlN, or MgO buffer layers; YBCO or LSGO template layers; YBCO conductive layers and various combinations of barrier layers that include PBCO, NBCO, and DBCO. Such JJ devices are simple to fabricate with wet and dry etching, and allow for superior current flow across the barrier layers.

Electrical, mechanical, computing, and/or other devices that include components formed of extremely low resistance (ELR) materials, including, but not limited to, modified ELR materials, layered ELR materials, and new ELR materials, are described.