Reversible phase transitions of exceptional magnitude may be induced in correlated metal oxides by altering their chemical compositions through reversible introduction of dopant ions and electronic carriers into the correlated metal oxides. One or more catalyst electrodes may be deposited onto a surface of a film of a correlated metal oxide such as a perovskite or a transition metal oxide. Dopant ions and electronic carriers may be electrochemically introduced into the catalyst-deposited correlated metal oxide, for example by annealing the catalyst-deposited film of correlated metal oxide in a chamber containing the dopant molecules. In this way, a reversible phase transition of about five to eight orders of magnitude may be induced.

Embodiments of the invention are directed to a vertical resistive device. A non-limiting example of the vertical resistive device includes a conductive horizontal electrode, an opening extending through the horizontal electrode, a filament region positioned within the opening and communicatively coupled to a sidewall of the horizontal electrode, and a conductive vertical electrode positioned within the opening and communicatively coupled to the filament region. The vertical electrode includes a first conductive alloy material. Oxygen vacancy formation in the filament region is controlled by the first conductive alloy material of the vertical electrode. A room temperature resistivity of the first conductive alloy material is below about 510.sup.8 ohm meters and controlled by at least one of the metals that form the first conductive alloy material.

Embodiments of the invention are directed to a method to modify material properties of a functional material of a nanoscale device post-fabrication. The method includes performing one or more conditioning steps. The conditioning steps include applying electrical conditioning signals of predefined form to the nanoscale device, thereby performing an in-situ heating of the functional material and inducing thermally a displacement of atoms, molecules or ions of the functional material of the nanoscale device. Embodiments of the invention further concerns a related electronic device.

A semiconductor device with a large storage capacity per unit area is provided. The semiconductor device includes a first insulator including a first opening, a first conductor that is over the first insulator and includes a second opening, a second insulator that is over the first insulator and includes a third opening, and an oxide penetrating the first opening, the second opening, and the third opening. The oxide includes a first region at least in the first opening, a second region at least in the second opening, and a third region at least in the third opening. The resistances of the first region and the third region are lower than the resistance of the second region.

Subject matter herein disclosed relates to a method for the manufacture of a switching device comprising a correlated electron material. In embodiments, processes are described which may be useful for avoiding a resistive layer which tends to form between the correlated electron material and a conductive substrate and/or overlay.

The disclosed technology generally relates to integrated circuit (IC) devices and more particularly to IC devices based on metal ion migration, and to manufacturing of the IC devices. In one aspect, a method of manufacturing an integrated electronic circuit, which includes at least one component based on metal ion migration and reduction, allows improved control of an amount of the metal which is incorporated into the component. This amount is produced from a metal supply layer and transferred into a container selectively with respect to the rest of the component. The container is configured as part of an electrolyte portion or active electrode in the final component. The method is compatible with two-dimensional and three-dimensional configurations of the component.

A method of forming a memory device that includes depositing a first dielectric material within a trench of composed of a second dielectric material; positioning a nanotube within the trench using chemical recognition to the first dielectric material; depositing a dielectric for cation transportation within the trench on the nanotube; and forming a second electrode on the dielectric for cation transportation, wherein the second electrode is composed of a metal.

A memristor device includes a first electrode, a second electrode, and a memristor layer disposed between the first electrode and the second electrode. The memristor layer is formed of a metal oxide. The memristor layer includes a plurality of regions that extend between the first electrode and the second electrode. The plurality of regions of the memristor layer are created with different concentrations of oxygen before electrical operation, and, during electrical operation, a voltage-conductance characteristic of the memristor device is controlled based on the different concentrations of oxygen of the plurality of regions. The controlling of the voltage-conductance characteristic includes increasing or decreasing the conductance of the memristor device toward a target conductance at a specific voltage.

Disclosed is a method of fabricating a semiconductor device. The method may include forming a mold layer on a substrate, the mold layer having a hole exposing a portion of the substrate, forming a phase transition layer with a void, in the hole, and thermally treating the phase transition layer to remove the void from the phase transition layer. The thermal treating of the phase transition layer may include heating the substrate to a first temperature to form a diffusion layer in the phase transition layer, and the first temperature may be lower than or equal to 55% of a melting point of the phase transition layer.

Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) device. In embodiments, after formation of the one or more CEM traces, a spacer may be deposited in contact with the one or more CEM traces. The spacer may operate to control an atomic concentration of dopant within the one or more CEM traces by replenishing dopant that may be lost during subsequent processing and/or by forming a seal to reduce further loss of dopant from the one or more CEM traces.