The present disclosure, in some embodiments, relates to a memory device. The memory device includes a dielectric protection layer having sidewalls defining an opening over a conductive interconnect within an inter-level dielectric (ILD) layer. A bottom electrode structure extends from within the opening to directly over the dielectric protection layer. A variable resistance layer is over the bottom electrode structure and a top electrode is over the variable resistance layer. A top electrode via is disposed on the top electrode and directly over the dielectric protection layer.

A radio frequency (RF) switching circuit includes stacked phase-change material (PCM) RF switches. Each of the PCM RF switches includes a PCM, a heating element transverse to the PCM, and first and second heating element contacts. The first heating element contact is coupled to an RF ground, and the second heating element contact may also be coupled to an RF ground. Each of the PCM RF switches can also include first and second PCM contacts. A compensation capacitor can be coupled across the first and second PCM contacts in at least one of the PCM RIF switches.

A phase change memory and a method of fabricating the same are provided. The phase change memory includes a lower electrode, an annular heater, an annular phase change layer, and an upper electrode. The annular heater is disposed over the lower electrode. The annular phase change layer is disposed over the annular heater, and the annular phase change layer and the annular heater are misaligned in a normal direction of the lower electrode. The upper electrode is disposed over the annular phase change layer. The present disclosure simplifies the manufacturing process of the phase change memory, reduces the manufacturing cost, and improves the manufacturing yield. In addition, a contact surface between the heater and the phase change layer of the phase change memory of the present disclosure is very small, so that the phase change memory has an extremely low reset current.

A radio frequency (RF) switch includes a phase-change material (PCM) and a heating element underlying an active segment of the PCM, the PCM and heating element being situated over a substrate. A contact dielectric is over the PCM. PCM contacts have upper portions and uniform plate slot lower portions. The uniform plate slot lower portions have a total plate resistance R.sub.PLATE, and a total plate slot interface resistance R.sub.PLATE-INT. The upper portions have a total capacitance C.sub.UPPER to the uniform plate slot lower portions, and the PCM has a total capacitance C.sub.PCM to the substrate. The uniform plate slot lower portions significantly reduce a product of (R.sub.PLATE+R.sub.PLATE-INT) and (C.sub.UPPER+C.sub.PCM). As an alternative to the uniform plate slot lower portions, PCM contacts have segmented lower portions. The segmented lower portions significantly reduce C.sub.UPPER.

A radio frequency (RF) switch includes a phase-change material (PCM) and a heating element underlying an active segment of the PCM, the PCM and heating element being situated over a substrate. A contact dielectric is over the PCM. PCM contacts have upper portions and uniform plate slot lower portions. The uniform plate slot lower portions have a total plate resistance R.sub.PLATE, and a total plate slot interface resistance R.sub.PLATE-INT. The upper portions have a total capacitance C.sub.UPPER to the uniform plate slot lower portions, and the PCM has a total capacitance C.sub.PCM to the substrate. The uniform plate slot lower portions significantly reduce a product of (R.sub.PLATE+R.sub.PLATE-INT) and (C.sub.UPPER+C.sub.PCM). As an alternative to the uniform plate slot lower portions, PCM contacts have segmented lower portions. The segmented lower portions significantly reduce C.sub.UPPER.

Electronic devices, memory devices, and computing devices are disclosed. An electronic device includes electronic circuitry, a temperature sensor, a heat sink, at least one thermoelectric material, a thermally conductive material configured to thermally couple the electronic circuitry to the at least one thermoelectric material, and a transistor. The temperature sensor is configured to monitor a temperature of the electronic circuitry. The transistor is configured to selectively enable thermoelectric current to flow through the at least one thermoelectric material and dissipate heat from the thermally conductive material to the heat sink responsive to fluctuations in the temperature of the electronic circuitry detected by the temperature sensor.

A radio frequency (RF) switch includes a stressed phase-change material (PCM) and a heating element underlying an active segment of the stressed PCM and extending outward and transverse to the stressed PCM. In one approach, at least one transition layer is situated over the stressed PCM. An encapsulation layer is situated over the at least one transition layer and on first and second sides of the stressed PCM. A stressor layer is situated over the encapsulation layer and the said stressed PCM. Alternatively or additionally, contacts of the RF switch extend into passive segments of a PCM, wherein adhesion layers adhere the passive segments of the PCM to the contacts.

In fabricating a radio frequency (RF) switch, a phase-change material (PCM) and a heating element, underlying an active segment of the PCM and extending outward and transverse to the PCM, are provided. Lower portions of PCM contacts for connection to passive segments of the PCM are formed, wherein the passive segments extend outward and are transverse to the heating element. Upper portions of the PCM contacts are formed from a lower interconnect metal. Heating element contacts are formed cross-wise to the PCM contacts. The heating element contacts can comprise a top interconnect metal directly connecting with terminal segments of the heating element. The heating element contacts can comprise a top interconnect metal and intermediate metal segments for connecting with the terminal segments of the heating element.

In fabricating a radio frequency (RF) switch, a phase-change material (PCM) and a heating element, underlying an active segment of the PCM and extending outward and transverse to the PCM, are provided. Lower portions of PCM contacts for connection to passive segments of the PCM are formed, wherein the passive segments extend outward and are transverse to the heating element. Upper portions of the PCM contacts are formed from a lower interconnect metal. Heating element contacts are formed cross-wise to the PCM contacts. The heating element contacts can comprise a top interconnect metal directly connecting with terminal segments of the heating element. The heating element contacts can comprise a top interconnect metal and intermediate metal segments for connecting with the terminal segments of the heating element.

Technologies relating to one-selector-one-memristor (1S1R) crossbar array circuits methods for reducing 1S1R cell-to-cell switch variations are disclosed. An example apparatus includes: a bottom electrode; a filament forming layer formed on the bottom electrode; an oxidized filament forming layer; a channel forming layer formed on the filament forming layer; an oxidized filament forming layer; a top electrode formed on the channel forming layer, wherein the filament forming layer is configured to form a filament within the filament forming layer, the channel forming layer is configured to form a channel within the channel forming layer when applying a switching voltage upon the filament forming layer and the channel forming layer, and wherein the filament forming layer is surrounded by the oxidized filament forming layer and the channel forming layer is surrounded by the oxidized channel forming layer.