The present invention relates to a varistor material for a surge arrester with target switching field strength ranging from 250 to 400 V/mm comprising ZnO forming a ZnO phase and Bi expressed as Bi.sub.2O.sub.3 forming an intergranular bismuth oxide phase, said varistor material further comprising a spinel phase, characterized in that the amount of a pyrochlore phase comprised in the varistor material is such, that the ratio of the pyrochlore phase to the spinel phase is less than 0.15:1.

The present invention relates to a varistor material for a surge arrester with target switching field strength ranging from 250 to 400 V/mm comprising ZnO forming a ZnO phase and Bi expressed as Bi.sub.2O.sub.3 forming an intergranular bismuth oxide phase, said varistor material further comprising a spinel phase, characterized in that the amount of a pyrochlore phase comprised in the varistor material is such, that the ratio of the pyrochlore phase to the spinel phase is less than 0.15:1.

A method of manufacturing a metal oxide varistor (MOV), the method including placing a quantity of a MOV composition in a pressing die, the MOV composition including metal oxide granules mixed with a polyaniline-polymer, performing a pressing operation including operating the pressing die to compress the MOV composition into a solid MOV chip, and applying first and second electrodes to opposing first and second sides of the MOV chip, wherein the pressing operation is performed at a temperature in a range of 15 degrees Celsius to 200 degrees Celsius.

A method of manufacturing a metal oxide varistor (MOV), the method including placing a quantity of a MOV composition in a pressing die, the MOV composition including metal oxide granules mixed with a polyaniline-polymer, performing a pressing operation including operating the pressing die to compress the MOV composition into a solid MOV chip, and applying first and second electrodes to opposing first and second sides of the MOV chip, wherein the pressing operation is performed at a temperature in a range of 15 degrees Celsius to 200 degrees Celsius.

Exemplary embodiments of the present invention are directed to a circuit protection device, A circuit protection device may comprise a housing defining a cavity and a metal oxide varistor (MOV) disposed within the cavity. The circuit protection device may further comprise a first terminal electrically attached at a first end to the MOV by solder and extending outside of the housing at a second end. An arc shield is disposed within the housing between the first end of the first terminal and at least partially over the solder. The circuit protection device may further comprise a spring configured to bias the arc shield against a micro switch having an indicator portion disposed at least partially outside of the housing. When a voltage surge condition occurs, the MOV changes from a non-conductive state to a conductive state and current flows between the first terminal and a second terminal where the heat generated by the current flowing through the varistor melts the solder and the first end of the first terminal electrically separates from the varistor.

A structure and method for fabricating a laterally configured thin film varistor surge protection device using low temperature sputtering techniques which do not damage IC device components contiguous to the varistor being fabricated. The lateral thin film varistor may include of a continuous layer of alternating regions of a first metal oxide layer and a second metal oxide layer formed between two laterally spaced electrodes using a low temperature sputtering process followed by a low temperature annealing process.

A structure and method for fabricating a laterally configured thin film varistor surge protection device using low temperature sputtering techniques which do not damage IC device components contiguous to the varistor being fabricated. The lateral thin film varistor may include of a continuous layer of alternating regions of a first metal oxide layer and a second metal oxide layer formed between two laterally spaced electrodes using a low temperature sputtering process followed by a low temperature annealing process.

A varistor may include a varistor ceramic that includes zinc oxide having a molar percent greater than 90 percent and a set of metal oxides, where the set of metal oxides includes Bi.sub.2O.sub.3 having a molar fraction between 0.2 and 2.5 percent; Co.sub.3O.sub.4 having a molar fraction between 0.2 and 1.2 percent; Mn.sub.3O.sub.4 having a molar fraction between 0.05 and 0.5 percent; Cr.sub.2O.sub.3 having a molar fraction between 0.05 and 0.5 percent; NiO having a molar fraction between 0.5 and 1.5 percent; Sb.sub.2O.sub.3 oxide having a molar fraction between 0.05 and 1.5 percent; B.sub.2O.sub.3 having a molar fraction between 0.001 to 0.03 percent; and aluminum in the form of an oxide having a molar fraction between 0.001 and 0.05 percent.

A varistor may include a varistor ceramic that includes zinc oxide having a molar percent greater than 90 percent and a set of metal oxides, where the set of metal oxides includes Bi.sub.2O.sub.3 having a molar fraction between 0.2 and 2.5 percent; Co.sub.3O.sub.4 having a molar fraction between 0.2 and 1.2 percent; Mn.sub.3O.sub.4 having a molar fraction between 0.05 and 0.5 percent; Cr.sub.2O.sub.3 having a molar fraction between 0.05 and 0.5 percent; NiO having a molar fraction between 0.5 and 1.5 percent; Sb.sub.2O.sub.3 oxide having a molar fraction between 0.05 and 1.5 percent; B.sub.2O.sub.3 having a molar fraction between 0.001 to 0.03 percent; and aluminum in the form of an oxide having a molar fraction between 0.001 and 0.05 percent.

Provided is a zinc oxide element which does not contain antimony oxide and has good nonlinear resistance characteristics (V10 kA/V1 mA nonlinearity) by controlling the particle size of zinc oxide particles in a sintered body. The zinc oxide element of the present invention includes a fired body containing zinc oxide, bismuth oxide, and zinc stannate (Zn.sub.2SO.sub.4). A method for producing a zinc oxide element of the present invention includes firing a raw material oxide that contains zinc oxide, bismuth oxide, and tin oxide and does not contain antimony oxide, and segregating zinc stannate (Zn.sub.2SO.sub.4) at grain boundaries of the fired zinc oxide.