A rare-earth thin film magnet is provided which includes Nd, Fe and B as essential components, characterized by including a Si substrate having an oxide film present on a surface thereof, a Nd base film formed as a first layer over the Si substrate, and a Nd—Fe—B film formed as a second layer on the first layer. The rare earth thin film magnet and a production process therefor provides a rare earth thin film magnet suffering neither film separation nor substrate breakage and having satisfactory magnetic properties even when the second layer has composition in the range of 0.120 ≤Nd/(Nd+Fe)<0.150, which corresponds to a compositional range in the vicinity of a stoichiometric composition.

Provided is a rare earth thin film magnet having Nd, Fe and B as essential components, which is characterized in that a Nd—Fe—B base film is formed on a Si substrate having an oxide film formed on a surface thereof and has a composition in which the Nd content is higher than that of a stoichiometric composition and that a film (nano composite film) is formed on the base film and has a texture in which an α-Fe phase and Nd.sub.2Fe.sub.14B are alternately arranged and three-dimensionally dispersed. The rare earth thin film magnet provided is less susceptible to the occurrence of film separation and substrate breakage and exhibits favorable magnetic properties.

An apparatus is provided which comprises: a ferromagnetic (FM) region with magnetostrictive (MS) property; a piezo-electric (PZe) region adjacent to the FM region; and a magnetoelectric region adjacent to the FM region. An apparatus is provided which comprises: a FM region with MS property; a PZe region adjacent to the FM region; and a magnetoelectric region, wherein the FM region is at least partially adjacent to the magnetoelectric region. An apparatus is provided which comprises: a FM region with MS property; a PZe region adjacent to the FM region; a magnetoelectric region being adjacent to the FM and PZe regions; a first electrode adjacent to the FM and PZe regions; a second electrode adjacent to the magnetoelectric region; a spin orbit coupling (SOC) region adjacent to the magnetoelectric region; and a third electrode adjacent to the SOC region.

A method of producing an oppositely magnetized magnetic structure within or on a substrate material includes: First and second numbers of cavities are generated within or on a substrate material and are filled with first and second hard magnetic materials, respectively, exhibiting first and second coercive field strengths, respectively, so as to produce first and second arrangements of hard magnetic structures, respectively, the second coercive field strength being smaller than the first coercive field strength.

The first and second arrangements of hard magnetic structures are magnetized in a first direction by a first magnetic field exhibiting a field strength which exceeds the first and second coercive field strengths.

The second arrangement of hard magnetic structures is magnetized in a second direction, which differs from the first direction, by a second magnetic field exhibiting a field strength which falls below the first coercive field strength but exceeds the second coercive field strength. Magnetizing the second arrangement of hard magnetic structures includes exposing the first and second arrangements of hard magnetic structures to the second magnetic field.

A magnetic alloy material according to the present disclosure is an iron-aluminum-terbium based magnetic alloy material containing a total of 70 atomic percent or more of three elements of iron, aluminum, and terbium.

A device and to a method of producing a device, wherein the method includes, inter alia, providing a substrate and generating at least two mutually spaced-apart cavities within the substrate. In accordance with the invention, each cavity has a depth of at least 50 m. The cavities are filled up with magnetic particles, wherein the magnetic particles enter into contact with one another at points of contact, and wherein cavities are formed between the points of contact. At least some of the magnetic particles are connected to one another at their points of contact, specifically by coating the magnetic particles, wherein the cavities are at least partly penetrated by the layer produced in the coating process, so that the connected magnetic particles form a magnetic porous structure.

A method includes depositing a first metal layer on a semiconductor substrate; etching the first metal layer to form a first electrode having a first lead; depositing a piezoelectric layer on the semiconductor substrate and first electrode; etching the piezoelectric layer to a shape of the gyrator to be formed within the circulator; depositing a second metal layer on the piezoelectric layer; etching the second metal layer to form a second electrode having a second lead, the second electrode being positioned opposite the first electrode, wherein the first lead and the second lead form an electrical port; depositing a magnetostrictive layer on the second electrode; etching the magnetostrictive layer to approximately the shape of the piezoelectric layer; depositing a third metal layer on the magnetostrictive layer; and etching the third metal layer to form a metal coil that has a gap on one side to define a magnetic port.

According to one embodiment, a magnetic device includes a magnetoresistive effect element. The magnetoresistive effect element includes a first nonmagnet, a second nonmagnet, a first ferromagnet between the first nonmagnet and the second nonmagnet, a third nonmagnet including a rare-earth oxide, the second nonmagnet between the first ferromagnet and the third nonmagnet, and a fourth nonmagnet between the second nonmagnet and the third nonmagnet and including a metal.

The invention relates to non-Joulian magnetostriction (NJM) materials comprising transition metals, such as iron alloy magnets with non-Joulian magnetostriction (NJM). The invention also relates to reversibly linear non-dissipative transition metals magnets. The materials are capable of simultaneously large actuation in longitudinal and transverse directions, without simultaneous heat loss. The invention relates as well to methods of making non-Joulian magnetostriction (NJM) materials.

A magnetoresistive random access memory (MRAM) including spin-transfer torque (STT) MRAM is provided that has enhanced data retention. The enhanced data retention is provided by constructing a MTJ pillar having a temperature-independent Delta, where Delta is Delta=Eb/kt, wherein Eb is the activation energy, k is the Boltzmann's constant, and T is the absolute temperature. Notably, the present application provides a way for EB to actually increase with temperature, which can cancel the effect of the term kT, resulting in a temperature independent Delta.