An integrated circuit is a layered device, on a semiconductor substrate, which contains metal electrodes that sandwich a piezoelectric layer, followed by a magnetostrictive layer and a metal coil. The metal electrodes define an electrical port across which to receive an alternating current (AC) voltage, which is applied across the piezoelectric layer to cause a time-varying strain in the piezoelectric layer. The magnetostrictive layer is to translate the time-varying strain, received by way of a vibration mode from interaction with the piezoelectric layer, into a time-varying electromagnetic field. The metal coil, disposed on the magnetostrictive layer, includes a magnetic port at which to induce a current based on exposure to the time-varying electromagnetic field generated by the magnetostrictive layer.

A magnetic signal device for measuring the movement and/or the position of a component of a drive machine has a supporting structure and a hard-magnetic layer applied on the supporting structure, wherein the hard-magnetic layer is applied via hollow cathode flow sputtering and/or electroplating and/or PVD and/or CVD and/or plasma spraying and x % by mass of the hard-magnetic layer consist of NdFeB and/or Co.sub.5Sm and/or Co.sub.2Sm.sub.17 and/or Co.sub.5Sm and/or Co.sub.2Sm.sub.17 and the hard-magnetic layer has a magnetic remanence of 0.3 T to 1.3 T in its scanning region.

A rare-earth thin film magnet is provided which includes Nd, Fe and B as essential components, characterized by including a Si substrate having an oxide film present on a surface thereof, a Nd base film formed as a first layer over the Si substrate, and a NdFeB film formed as a second layer on the first layer. The rare earth thin film magnet and a production process therefor provides a rare earth thin film magnet suffering neither film separation nor substrate breakage and having satisfactory magnetic properties even when the second layer has composition in the range of 0.120 5 Nd/(Nd+Fe)<0.150, which corresponds to a compositional range in the vicinity of a stoichiometric composition.

A rare earth thin-film magnet of a NdFeB film deposited on a Si substrate, wherein, when the film thickness of the rare earth thin film is 70 m or less, the Nd content satisfies the conditional expression of 0.15Nd/(Nd+Fe)0.25 in terms of an atomic ratio; when the film thickness of the rare earth thin film is 70 m to 115 m (but excluding 70 m), the Nd content satisfies the conditional expression of 0.18Nd/(Nd+Fe)0.25 in terms of an atomic ratio; and when the film thickness of the rare earth thin film is 115 m to 160 m (but excluding 115 m), the Nd content satisfies the conditional expression of 0.20Nd/(Nd+Fe)0.25 in terms of an atomic ratio. An object of the present invention is to provide a rare earth thin-film magnet having a maximum film thickness of 160 m and which is free from film separation and substrate fracture, and a method of producing such a rare earth thin-film magnet by which the thin film can be stably deposited.

A thin film magnet includes a substrate, an oxidation-inhibiting layer in an amorphous state disposed on an upper surface of the substrate, a first magnetic layer disposed on the oxidation-inhibiting layer, an intermediate layer disposed on the first magnetic layer, a second magnetic layer disposed on the intermediate layer, and a second oxidation-inhibiting layer in an amorphous state disposed above the second magnetic layer. The intermediate layer contains metal particles. The metal particles are diffused in the first magnetic layer and the second magnetic layer. The concentration of the metal particles in a part of the first magnetic layer decreases as the distance from the intermediate layer to the part of the first magnetic layer increases. The concentration of the metal particles in a part of the second magnetic layer decreases as the distance from the intermediate layer to the part of the second magnetic layer increases.

The present invention relates to a metallic hard magnetic material selected from an at least binary ferromagnetic or ferrimagnetic compound, with the metallic hard magnetic material including at least two different elements selected from the group consisting of 3d and 4f elements, where the metallic hard magnetic material is under an external magnetic field B of 0.1 T.

A spintronic memory device having a spin momentum-locking (SML) channel, a nanomagnet structure (NMS) disposed on the SML, and a plurality of normal metal electrodes disposed on the SML. The magnetization orientation of the NMS is controlled by current injection into the SML through normal metal electrode. The magnetization orientation of the NMS is determined by measuring voltages across the NMS and the SML while flowing charge current through the SML via the normal metal electrodes.

A rare-earth magnet is an R-T-B-based rare-earth magnet containing a rare-earth element R, a transition metal element T, and boron B. The rare-earth magnet further contains Cu and Co, while having a Cu concentration distribution with a gradient along a direction from a surface of the rare-earth magnet to the inside thereof, Cu having a higher concentration on the surface side of the rare-earth magnet than on the inside thereof, and a Co concentration distribution with a gradient along a direction from the surface of the rare-earth magnet to the inside thereof, Co having a higher concentration on the surface side of the rare-earth magnet than on the inside thereof. The rare-earth magnet is excellent in corrosion resistance.

Disclosed herein are magnetic materials comprising rare earth nitrides and, more particularly, magnetic materials comprising multilayer-structured materials comprising one relatively soft and one relatively hard magnetic layer. The magnetic materials comprise a first ferromagnetic layer, a second ferromagnetic layer, and a blocking layer between and in contact with each of the first 5 and second ferromagnetic layers. The first and second ferromagnetic layers have different coercive fields. The first ferromagnetic layer comprises a first rare earth nitride material and the second ferromagnetic layer comprises a second rare earth nitride material. Also disclosed are methods for preparing the materials. The materials are useful in the fabrication of devices, such as GMR magnetic field sensors, MRAM devices, TMR magnetic field sensors, and magnetic 10 tunnel junctions.

An apparatus is provided which comprises: a ferromagnetic (FM) region with magnetostrictive (MS) property; a piezo-electric (PZe) region adjacent to the FM region; and a magnetoelectric region adjacent to the FM region. An apparatus is provided which comprises: a FM region with MS property; a PZe region adjacent to the FM region; and a magnetoelectric region, wherein the FM region is at least partially adjacent to the magnetoelectric region. An apparatus is provided which comprises: a FM region with MS property; a PZe region adjacent to the FM region; a magnetoelectric region being adjacent to the FM and PZe regions; a first electrode adjacent to the FM and PZe regions; a second electrode adjacent to the magnetoelectric region; a spin orbit coupling (SOC) region adjacent to the magnetoelectric region; and a third electrode adjacent to the SOC region.