Provided is a rare earth thin film magnet having Nd, Fe and B as essential components, which is characterized in that a NdFeB base film is formed on a Si substrate having an oxide film formed on a surface thereof and has a composition in which the Nd content is higher than that of a stoichiometric composition and that a film (nano composite film) is formed on the base film and has a texture in which an -Fe phase and Nd.sub.2Fe.sub.14B are alternately arranged and three-dimensionally dispersed. The rare earth thin film magnet provided is less susceptible to the occurrence of film separation and substrate breakage and exhibits favorable magnetic properties.

A method for producing a film including a non-magnetic matrix and a plurality of three-dimensional magnetic microstructures arranged within the matrix according to a predetermined pattern. The method includes providing a master substrate with a magnetically structured face formed from a plurality of magnetic field micro-sources, having a magnetic field gradient of between 10.sup.2 and 10.sup.6 T/m. The method also includes adding magnetic microparticles or nanoparticles to the magnetically structured face of the master substrate, the particles agglomerating into three-dimensional microstructures arranged under an effect of an attractive magnetophoretic force exerted by the magnetic field gradient on the surface of the master substrate. The method further includes depositing, on the magnetically structured face of the master substrate, a matrix made from a non-magnetic material, in such a way as to enclose the arranged microstructures and to form the film and peeling the film from the master substrate.

The disclosed technology generally relates to semiconductor devices, and more particularly to a device configured as one or both of a spin wave generator or a spin wave detector. In one aspect, the device includes a magnetostrictive film and a deformation film physically connected to the magnetorestrictive film. The device also includes an acoustic isolation surrounding the magnetostrictive film and the deformation film to form an acoustic resonator. When the device is configured as the spin wave generator, the deformation film is configured to undergo a change physical dimensions in response to an actuation, where the change in the physical dimensions of the deformation film induces a mechanical stress in the magnetostrictive film to cause a change in the magnetization of the magnetostrictive film. When the device is configured as the spin wave detector, the magnetostrictive film is configured to undergo to a change in physical dimensions in response to a change in magnetization, wherein the change in the physical dimensions of the magnetostrictive film induces a mechanical stress in the deformation film to cause generation of electrical power by the deformation film.

The invention relates to magnetic thin films including a single magnetic layer of La.sub.(1-x)Sr.sub.xMnO.sub.3 deposited on a non-magnetic substrate. The invention further relates to devices comprising said magnetic thin films and methods of manufacture.

A magnetic memory including a plurality of magnetic junctions and at least one spin-orbit interaction (SO) active layer is described. Each of the magnetic junctions includes a pinned layer, a free layer and a nonmagnetic spacer layer between reference and free layers. The free layer has at least one of a tilted easy axis and a high damping constant. The tilted easy axis is at a nonzero acute angle from a direction perpendicular-to-plane. The high damping constant is at least 0.02. The at least one SO active layer is adjacent to the free layer and carries a current in-plane. The at least one SO active layer exerts a SO torque on the free layer due to the current. The free layer is switchable using the SO torque.

The invention provides a nanocomposite magnet, which has achieved high coercive force and high residual magnetization. The magnet is a non-ferromagnetic phase that is intercalated between a hard magnetic phase with a rare-earth magnet composition and a soft magnetic phase, wherein the non-ferromagnetic phase reacts with neither the hard nor soft magnetic phase. A hard magnetic phase contains Nd.sub.2Fe.sub.14B, a soft magnetic phase contains Fe or Fe.sub.2Co, and a non-ferromagnetic phase contains Ta. The thickness of the non-ferromagnetic phase containing Ta is 5 nm or less, and the thickness of the soft magnetic phase containing Fe or Fe.sub.2Co is 20 nm or less. Nd, or Pr, or an alloy of Nd and any one of Cu, Ag, Al, Ga, and Pr, or an alloy of Pr and any one of Cu, Ag, Al, and Ga is diffused into a grain boundary phase of the hard magnetic phase of Nd.sub.2Fe.sub.14B.

A spintronic memory device having a spin momentum-locking (SML) channel, a nanomagnet structure (NMS) disposed on the SML, and a plurality of normal metal electrodes disposed on the SML. The magnetization orientation of the NMS is controlled by current injection into the SML through normal metal electrode. The magnetization orientation of the NMS is determined by measuring voltages across the NMS and the SML while flowing charge current through the SML via the normal metal electrodes.

A magnet is disclosed. The magnet includes a plurality of layers such that a first layer includes a ferromagnetic material comprising iron and a rare earth element; and a second layer includes an alkaline earth metal fluoride and a rare earth oxide. A method of preparing a magnet and an article including the magnet are disclosed. The method includes disposing a first layer including a ferromagnetic material and disposing a second layer over the first layer.

A magnetic memory including a plurality of magnetic junctions and at least one spin-orbit interaction (SO) active layer is described. Each of the magnetic junctions includes a pinned layer, a free layer and a nonmagnetic spacer layer between reference and free layers. The free layer has at least one of a tilted easy axis and a high damping constant. The tilted easy axis is at a nonzero acute angle from a direction perpendicular-to-plane. The high damping constant is at least 0.02. The at least one SO active layer is adjacent to the free layer and carries a current in-plane. The at least one SO active layer exerts a SO torque on the free layer due to the current. The free layer is switchable using the SO torque.

A magnetoresistive random access memory (MRAM) including spin-transfer torque (STT) MRAM is provided that has enhanced data retention. The enhanced data retention is provided by constructing a MTJ pillar having a temperature-independent Delta, where Delta is Delta=Eb/kt, wherein Eb is the activation energy, k is the Boltzmann's constant, and T is the absolute temperature. Notably, the present application provides a way for EB to actually increase with temperature, which can cancel the effect of the term KT, resulting in a temperature independent Delta.