The disclosure relates to a coil and an electrical system including the same. Specifically, according to an embodiment of the disclosure, there is provided a coil including: main coil surfaces which are opposite each other and are substantially planar; and a multilayer film which is wound to form a plurality of loops which are substantially concentric, wherein the plurality of loops include an innermost loop including a first longitudinal direction end of the coil, and an outermost loop including a second longitudinal direction end of the coil, wherein the multilayer film includes a plurality of first electro-conductive layers which alternate with each other, and one or more second electrical insulation layers, wherein the first electro-conductive layer and the second electrical insulation layer have a width and a length which are substantially coextensive therebetween, such that the main coil surfaces, which are substantially planar, include corresponding end surfaces of the first electro-conductive layer and the second electrical insulation layer, respectively, wherein at least two first electro-conductive layers have different average thicknesses to reduce an alternating current resistance of the coil by 5%-11.3% inclusive in a frequency of at least about 148 KHz.

The disclosed technology generally relates to a magnetoresistive device and more particularly to a magnetoresistive device comprising chromium. According to an aspect, a method of forming a magnetoresistive device comprises forming a magnetic tunnel junction (MTJ) structure over a substrate. The MTJ structure includes, in a bottom-up direction away from the substrate, a free layer, a tunnel barrier layer and a reference layer. The method additionally includes forming a pinning layer over the MTJ structure, wherein the pinning layer pins a magnetization direction of the reference layer. The method additionally includes forming capping layer comprising chromium (Cr) over the pinning layer. The method further includes annealing the capping layer under a condition sufficient to cause diffusion of Cr from the capping layer into at least the pinning layer. According to another aspect, a magnetoresistive device is formed according to the method.

Apparatuses and methods of recording read heads with a multi-layer anti-ferromagnetic (AFM) layer are provided. The AFM layer has gradient Manganese (Mn) compositions. A multi-layer AFM layer comprises a plurality of sub-layers having different Mn compositions. An upper sub-layer has a higher Mn composition than an lower sub-layer. Different types of gases may be used to deposit each sub-layer and the flow of each gas may be adjusted.

A method for producing a multilayer body of rapidly quenched soft magnetic alloy ribbons, in which a plurality of rapidly quenched soft magnetic alloy ribbons having a thickness of about 10 to 50 ?m and a width of about 10 to 250 mm are bonded together, includes: a resin application step in which a resin adhesive, which is an epoxy resin, is applied to at least one surface of at least one rapidly quenched soft magnetic alloy ribbon without being diluted with organic solvents; a stacking step in which, on the surface of the rapidly quenched soft magnetic alloy ribbon to which the resin adhesive is applied in the resin application step, another rapidly quenched soft magnetic alloy ribbon is stacked; and a heat treatment step in which the rapidly quenched soft magnetic alloy ribbons stacked in the stacking step are heated and bonded together to obtain a multilayer body.

A magnetic film includes iron and copper distributed between opposing first and second major surfaces of the magnetic film. The copper has a first atomic concentration C1 at a first depth d1 from the first major surface and a peak second atomic concentration C2 at a second depth d2 from the first major surface, d2>d1, C2/C15.

A quantum computing device is provided, including a plurality of spin-based quantum-dot qubits that each include one or more quantum dots. The plurality of spin-based quantum-dot qubits also each include a nanomagnet including an amorphous ferromagnetic alloy.

The purpose of the present invention is to provide a magnetic recording medium capable of achieving high recording density by decreasing the bit transition width of a heat-assisted magnetic recording medium during the heat-assisted recording stage. The magnetic recording medium according to the present invention includes a non-magnetic substrate and a magnetic recording layer, wherein the magnetic recording layer includes an ordered alloy containing Fe, Pt and Ru, the ordered alloy includes x atom % of Fe, y atom % of Pt and z atom % of Ru on the basis of the total number of the Fe, Pt and Ru atoms, and the parameters x, y and z satisfy the following expressions (i)-(v): (i) 0.85x/y1.3; (ii) x53; (iii) y51; (iv) 0.6z20; and (v) x+y+z=100.

The output voltage of an MRAM is increased by means of an Fe(001)/MgO(001)/Fe(001) MTJ device, which is formed by microfabrication of a sample prepared as follows: A single-crystalline MgO (001) substrate is prepared. An epitaxial Fe(001) lower electrode (a first electrode) is grown on a MgO(001) seed layer at room temperature, followed by annealing under ultrahigh vacuum. A MgO(001) barrier layer is epitaxially formed on the Fe(001) lower electrode (the first electrode) at room temperature, using a MgO electron-beam evaporation. A Fe(001) upper electrode (a second electrode) is then formed on the MgO(001) barrier layer at room temperature. This is successively followed by the deposition of a Co layer on the Fe(001) upper electrode (the second electrode). The Co layer is provided so as to increase the coercive force of the upper electrode in order to realize an antiparallel magnetization alignment.

A technique relates to a method of forming a laminated multilayer magnetic structure. An adhesion layer is deposited on a substrate. A magnetic seed layer is deposited on top of the adhesion layer. Magnetic layers and non-magnetic spacer layers are alternatingly deposited such that an even number of the magnetic layers is deposited while an odd number of the non-magnetic spacer layers is deposited. The odd number is one less than the even number. Every two of the magnetic layers is separated by one of the non-magnetic spacer layers. The first of the magnetic layers is deposited on the magnetic seed layer, and the magnetic layers each have a thickness less than 500 nanometers.

A technique relates to a method of forming a laminated multilayer magnetic structure. An adhesion layer is deposited on a substrate. A magnetic seed layer is deposited on top of the adhesion layer. Magnetic layers and non-magnetic spacer layers are alternatingly deposited such that an even number of the magnetic layers is deposited while an odd number of the non-magnetic spacer layers is deposited. The odd number is one less than the even number. Every two of the magnetic layers is separated by one of the non-magnetic spacer layers. The first of the magnetic layers is deposited on the magnetic seed layer, and the magnetic layers each have a thickness less than 500 nanometers.