According to one embodiment, a microwave sensor includes a first stacked body and a first controller. The first stacked body includes a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer. The first controller is electrically connected to the first magnetic layer and the second magnetic layer. The first controller is configured to supply a current to the first stacked body and is configured to sense a value corresponding to a first electrical resistance between the first magnetic layer and the second magnetic layer. A second magnetization of the second magnetic layer is aligned with a first direction from the first magnetic layer toward the second magnetic layer. The value corresponding to the first electrical resistance changes according to a microwave.

According to one embodiment, a microwave sensor includes a first stacked body and a first controller. The first stacked body includes a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer. The first controller is electrically connected to the first magnetic layer and the second magnetic layer. The first controller is configured to supply a current to the first stacked body and is configured to sense a value corresponding to a first electrical resistance between the first magnetic layer and the second magnetic layer. A second magnetization of the second magnetic layer is aligned with a first direction from the first magnetic layer toward the second magnetic layer. The value corresponding to the first electrical resistance changes according to a microwave.

Embodiments of the present invention relate generally to logic devices, and more particularly, to magnetoelectric magnetic tunneling junction computational devices. Aspects of the disclosed technology include a stand-alone voltage-controlled magnetoelectric device that satisfies essential requirements for general logic applications, including nonlinearity, gain, concatenability, feedback prevention, and a complete set of Boolean operations based on the majority gate and inverter. Aspects of the present disclosed technology can eliminate the need for any auxiliary FETs to preset or complicated clocking schemes and prevents the racing condition.

Embodiments of the present invention relate generally to logic devices, and more particularly, to magnetoelectric magnetic tunneling junction computational devices. Aspects of the disclosed technology include a stand-alone voltage-controlled magnetoelectric device that satisfies essential requirements for general logic applications, including nonlinearity, gain, concatenability, feedback prevention, and a complete set of Boolean operations based on the majority gate and inverter. Aspects of the present disclosed technology can eliminate the need for any auxiliary FETs to preset or complicated clocking schemes and prevents the racing condition.

Embodiments of the present invention relate generally to logic devices, and more particularly, to magnetoelectric magnetic tunneling junction computational devices. Aspects of the disclosed technology include a stand-alone voltage-controlled magnetoelectric device that satisfies essential requirements for general logic applications, including nonlinearity, gain, concatenability, feedback prevention, and a complete set of Boolean operations based on the majority gate and inverter. Aspects of the present disclosed technology can eliminate the need for any auxiliary FETs to preset or complicated clocking schemes and prevents the racing condition.

Embodiments of the present invention relate generally to logic devices, and more particularly, to magnetoelectric magnetic tunneling junction computational devices. Aspects of the disclosed technology include a stand-alone voltage-controlled magnetoelectric device that satisfies essential requirements for general logic applications, including nonlinearity, gain, concatenability, feedback prevention, and a complete set of Boolean operations based on the majority gate and inverter. Aspects of the present disclosed technology can eliminate the need for any auxiliary FETs to preset or complicated clocking schemes and prevents the racing condition.

The present invention provides an electromagnetic conversion device, comprising: an intermediate layer and electrode layers located on both sides of the intermediate layer, wherein the intermediate layer is a magnetoelectric layer. The electromagnetic conversion device realizes the direct conversion of charge and magnetic flux, and thus can be used as a fourth fundamental circuit element, so as to provide a new degree of freedom for the design of electronic circuits and information function devices. In addition, the electromagnetic conversion device can be used as memory elements to form a nonvolatile magnetoelectric information memory.

The present invention provides an electromagnetic conversion device, comprising: an intermediate layer and electrode layers located on both sides of the intermediate layer, wherein the intermediate layer is a magnetoelectric layer. The electromagnetic conversion device realizes the direct conversion of charge and magnetic flux, and thus can be used as a fourth fundamental circuit element, so as to provide a new degree of freedom for the design of electronic circuits and information function devices. In addition, the electromagnetic conversion device can be used as memory elements to form a nonvolatile magnetoelectric information memory.

In an embodiment, a method of forming a magneto-dielectric material comprises roll coating a ferromagnetic material onto a dielectric layer comprising a dielectric material by continuously moving the dielectric layer through a ferromagnetic coating zone to form a coated sheet; forming a plurality of sheets from the coated sheet; forming a layered stack of the plurality of sheets; laminating the layered stack to form the magneto-dielectric material having a plurality of alternating ferromagnetic layers and dielectric layers. In another embodiment, a method of forming a magneto-dielectric material comprises drum roll coating a ferromagnetic material and a dielectric material onto a drum roll to form the magneto-dielectric material having a plurality of alternating ferromagnetic layers and dielectric layers.

In an embodiment, a method of forming a magneto-dielectric material comprises roll coating a ferromagnetic material onto a dielectric layer comprising a dielectric material by continuously moving the dielectric layer through a ferromagnetic coating zone to form a coated sheet; forming a plurality of sheets from the coated sheet; forming a layered stack of the plurality of sheets; laminating the layered stack to form the magneto-dielectric material having a plurality of alternating ferromagnetic layers and dielectric layers. In another embodiment, a method of forming a magneto-dielectric material comprises drum roll coating a ferromagnetic material and a dielectric material onto a drum roll to form the magneto-dielectric material having a plurality of alternating ferromagnetic layers and dielectric layers.