H01F10/14

Integrated circuits with magnetic tunnel junctions and methods for producing the same

Integrated circuits and methods of producing the same are provided. In an exemplary embodiment, an integrated circuit includes a magnetic tunnel junction with a fixed layer, a total free structure, and a barrier layer between the fixed layer and the total free structure. The total free structure includes a first free layer, a second free layer, and a first spacer layer disposed between the first and second free layers. The first spacer layer is non-magnetic. At least one of the first or second free layers include a primary free layer alloy with cobalt, iron, boron, and a free layer additional element. The free layer additional element is present at from about 1 to about 10 atomic percent. The free layer additional element is selected from one or more of molybdenum, aluminum, germanium, tungsten, vanadium, niobium, tantalum, zirconium, manganese, titanium, chromium, silicon, and hafnium.

COMPOSITE MAGNETIC SEALING MATERIAL AND ELECTRONIC CIRCUIT PACKAGE USING THE SAME AS MOLD MATERIAL
20180204805 · 2018-07-19 · ·

Disclosed herein is a composite magnetic sealing material includes a resin material and a filler blended in the resin material in a blend ratio of 50 vol. % or more and 85 vol. % or less. The filler includes a first magnetic filler containing Fe and 32 wt. % or more and 39 wt. % or less of a metal material composed mainly of Ni, the first magnetic filler having a first grain size distribution, and a second magnetic filler having a second grain size distribution different from the first grain size distribution.

Magnetic sheet, electronic device using same, and method for manufacturing magnetic sheet

Provided is a magnetic sheet including a resin film and a thin sheet-shaped magnetic body adhered to the resin film by an adhesive layer sandwiched between the thin sheet-shaped magnetic body and the resin film. The thin sheet-shaped magnetic body is made from an Fe-based metal magnetic material, has a thickness of 15 m to 35 m, and has an AC relative magnetic permeability (.sub.r) in the range of 220 to 770 at a frequency of 500 kHz.

Magnetic sheet, electronic device using same, and method for manufacturing magnetic sheet

Provided is a magnetic sheet including a resin film and a thin sheet-shaped magnetic body adhered to the resin film by an adhesive layer sandwiched between the thin sheet-shaped magnetic body and the resin film. The thin sheet-shaped magnetic body is made from an Fe-based metal magnetic material, has a thickness of 15 m to 35 m, and has an AC relative magnetic permeability (.sub.r) in the range of 220 to 770 at a frequency of 500 kHz.

Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy

A magnetic tunnel junction with perpendicular magnetic anisotropy (PMA MTJ) is disclosed wherein a free layer has an interface with a tunnel barrier and a second interface with an oxide layer. A lattice-matching layer adjoins an opposite side of the oxide layer with respect to the free layer and is comprised of Co.sub.XFe.sub.YNi.sub.ZL.sub.WM.sub.V or Co.sub.XFe.sub.YNi.sub.ZL.sub.W wherein L is one of B, Zr, Nb, Hf, Mo, Cu, Cr, Mg, Ta, Ti, Au, Ag, or P, and M is one of Mo, Mg, Ta, Cr, W, or V, (x+y+z+w+v)=100 atomic %, x+y>0, and each of v and w are >0. The lattice-matching layer grows a BCC structure during annealing at about 400? C. thereby promoting BCC structure growth in the oxide layer. As a result, free layer PMA is enhanced and maintained to yield improved thermal stability.

Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy

A magnetic tunnel junction with perpendicular magnetic anisotropy (PMA MTJ) is disclosed wherein a free layer has an interface with a tunnel barrier and a second interface with an oxide layer. A lattice-matching layer adjoins an opposite side of the oxide layer with respect to the free layer and is comprised of Co.sub.XFe.sub.YNi.sub.ZL.sub.WM.sub.V or Co.sub.XFe.sub.YNi.sub.ZL.sub.W wherein L is one of B, Zr, Nb, Hf, Mo, Cu, Cr, Mg, Ta, Ti, Au, Ag, or P, and M is one of Mo, Mg, Ta, Cr, W, or V, (x+y+z+w+v)=100 atomic %, x+y>0, and each of v and w are >0. The lattice-matching layer grows a BCC structure during annealing at about 400? C. thereby promoting BCC structure growth in the oxide layer. As a result, free layer PMA is enhanced and maintained to yield improved thermal stability.

MULTI-LAYER MAGNETO-DIELECTRIC MATERIAL

A magneto-dielectric material operable between a minimum frequency and a maximum frequency, having: a plurality of layers that alternate between a dielectric material and a ferromagnetic material, lowermost and uppermost layers of the plurality of layers each being a dielectric material; each layer of the plurality of ferromagnetic material layers having a thickness equal to or greater than 1/15.sup.th a skin depth of the respective ferromagnetic material at the maximum frequency, and equal to or less than .sup.th the skin depth of the respective ferromagnetic material at the maximum frequency; each layer of the plurality of dielectric material layers having a thickness and a dielectric constant that provides a dielectric withstand voltage across the respective thickness of equal to or greater than 150 Volts peak and equal to or less than 1,500 Volts peak; and, the plurality of layers having an overall thickness equal to or less than one wavelength of the minimum frequency in the plurality of layers.

MULTI-LAYER MAGNETO-DIELECTRIC MATERIAL

A magneto-dielectric material operable between a minimum frequency and a maximum frequency, having: a plurality of layers that alternate between a dielectric material and a ferromagnetic material, lowermost and uppermost layers of the plurality of layers each being a dielectric material; each layer of the plurality of ferromagnetic material layers having a thickness equal to or greater than 1/15.sup.th a skin depth of the respective ferromagnetic material at the maximum frequency, and equal to or less than .sup.th the skin depth of the respective ferromagnetic material at the maximum frequency; each layer of the plurality of dielectric material layers having a thickness and a dielectric constant that provides a dielectric withstand voltage across the respective thickness of equal to or greater than 150 Volts peak and equal to or less than 1,500 Volts peak; and, the plurality of layers having an overall thickness equal to or less than one wavelength of the minimum frequency in the plurality of layers.

Perpendicular magnetic anisotropy BCC multilayers

A magnetic material includes a cobalt layer between opposing iron layers. The iron layers include iron and are body-centered cubic (BCC), the cobalt layer comprises cobalt and is BCC or amorphous, and the magnetic material has a perpendicular magnetic anisotropy (PMA).

Perpendicular magnetic anisotropy BCC multilayers

A magnetic material includes a cobalt layer between opposing iron layers. The iron layers include iron and are body-centered cubic (BCC), the cobalt layer comprises cobalt and is BCC or amorphous, and the magnetic material has a perpendicular magnetic anisotropy (PMA).