Large magnetic moment compositions are formed by stabilizing ternary or other alloys with a epitaxial control layer. Compositions that are unstable in bulk specimen are thus stabilized and exhibit magnetic moments that are greater that a Slater-Pauling limit. In one example, Fe.sub.xCo.sub.yMn.sub.z layers are produced on an MgO(001) substrate with an MgO surface serving to control the structure of the Fe.sub.xCo.sub.yMn.sub.z layers. Magnetizations greater than 3 Bohr magnetons are produced.

Large magnetic moment compositions are formed by stabilizing ternary or other alloys with a epitaxial control layer. Compositions that are unstable in bulk specimen are thus stabilized and exhibit magnetic moments that are greater that a Slater-Pauling limit. In one example, Fe.sub.xCo.sub.yMn.sub.z layers are produced on an MgO(001) substrate with an MgO surface serving to control the structure of the Fe.sub.xCo.sub.yMn.sub.z layers. Magnetizations greater than 3 Bohr magnetons are produced.

A magnetoresistance effect element includes a magnetic recording layer which includes a ferromagnetic material, a non-magnetic layer laminated on the magnetic recording layer, and a magnetization reference layer laminated on the non-magnetic layer. The magnetic recording layer includes a first ferromagnetic layer, a spacer layer, and a second ferromagnetic layer in order from the non-magnetic layer. The first ferromagnetic layer and the second ferromagnetic layer are antiferromagnetically coupled to each other. The magnetic recording layer has a central region in which a product of film thickness and saturation magnetization of the first ferromagnetic layer is greater than a product of a film thickness and saturation magnetization of the second ferromagnetic layer, and an outer region in which the product of the film thickness and the saturation magnetization of the first ferromagnetic layer is smaller than the product of the film thickness and the saturation magnetization of the second ferromagnetic layer.

A nanogranular magnetic film comprises a structure including first phases comprised of nano-domains dispersed in a second phase. A ratio of a volume of the first phases to a total volume of the first phases and the second phase is 65% or less. A largest one of A(Fe1)/A(Fe2), A(Co1)/A(Co2), and A(Ni1)/A(Ni2) has a value of 1.20 or more and 8.00 or less, provided that a percentage of Fe in the first phases is A(Fe1), a percentage of Fe in the second phase is A(Fe2), a percentage of Co in the first phases is A(Co1), a percentage of Co in the second phase is A(Co2), a percentage of Ni in the first phases is A(Ni1), and a percentage of Ni in the second phase is A(Ni2). The first phases comprised of the nano-domains have an average size of 2 nm or more and 30 nm or less.

One example includes a superconducting circuit. The circuit includes superconducting circuitry fabricated in a circuit layer. The circuit layer includes a first surface and a second surface opposite the first surface. The circuit also includes a flux moat comprising a dielectric material formed in the circuit layer. The flux moat can be configured to trap a magnetic flux as the superconducting circuit is cooled to below a superconducting critical temperature. The circuit further includes a magnetic film arranged proximal to the flux moat on at least one of the first and second surfaces of the circuit layer. The magnetic film can be configured to guide the magnetic flux to the flux moat as the superconducting circuit is cooled to below the superconducting critical temperature.

One example includes a superconducting circuit. The circuit includes superconducting circuitry fabricated in a circuit layer. The circuit layer includes a first surface and a second surface opposite the first surface. The circuit also includes a flux moat comprising a dielectric material formed in the circuit layer. The flux moat can be configured to trap a magnetic flux as the superconducting circuit is cooled to below a superconducting critical temperature. The circuit further includes a magnetic film arranged proximal to the flux moat on at least one of the first and second surfaces of the circuit layer. The magnetic film can be configured to guide the magnetic flux to the flux moat as the superconducting circuit is cooled to below the superconducting critical temperature.

A nanogranular magnetic film includes a structure including first phases comprised of nano-domains dispersed in a second phase. The first phases include at least one selected from the group consisting of Fe, Co, and Ni. The second phase includes at least one selected from the group consisting of O, N, and F. A ratio of a volume of the first phases to a total volume of the first phases and the second phase is 65% or less. A noble gas element is included at 0.20 at % or more and 0.80 at % or less.

A nanogranular magnetic film includes a structure including first phases comprised of nano-domains dispersed in a second phase. The first phases include at least one selected from the group consisting of Fe, Co, and Ni. The second phase includes at least one selected from the group consisting of O, N, and F. A ratio of a volume of the first phases to a total volume of the first phases and the second phase is 65% or less. A noble gas element is included at 0.20 at % or more and 0.80 at % or less.

A micromagnetic device and method of forming the same. In one embodiment, the micromagnetic device includes a substrate, a seed layer over the substrate and a magnetic layer over the seed layer. The magnetic layer includes a magnetic alloy including iron, cobalt, boron and phosphorous, wherein a content of the cobalt is in a range of 1.0 to 8.0 atomic percent, a content of the boron is in a range of 0.5 to 10 atomic percent, a content of the phosphorus is in a range of 3.5 to 25 atomic percent, and a content of the iron is substantially a remaining proportion of the magnetic alloy.

A micromagnetic device and method of forming the same. In one embodiment, the micromagnetic device includes a substrate, a seed layer over the substrate and a magnetic layer over the seed layer. The magnetic layer includes a magnetic alloy including iron, cobalt, boron and phosphorous, wherein a content of the cobalt is in a range of 1.0 to 8.0 atomic percent, a content of the boron is in a range of 0.5 to 10 atomic percent, a content of the phosphorus is in a range of 3.5 to 25 atomic percent, and a content of the iron is substantially a remaining proportion of the magnetic alloy.