A layered thin film device, such as a MTJ (Magnetic Tunnel Junction) device can be customized in shape by sequentially forming its successive layers over a symmetrically curved electrode. By initially shaping the electrode to have a concave or convex surface, the sequentially formed layers conform to that shape and acquire it and are subject to stresses that cause various crystal defects to migrate away from the axis of symmetry, leaving the region immediately surrounding the axis of symmetry relatively defect free. The resulting stack can then be patterned to leave only the region that is relatively defect free.

A layered thin film device, such as a MTJ (Magnetic Tunnel Junction) device can be customized in shape by sequentially forming its successive layers over a symmetrically curved electrode. By initially shaping the electrode to have a concave or convex surface, the sequentially formed layers conform to that shape and acquire it and are subject to stresses that cause various crystal defects to migrate away from the axis of symmetry, leaving the region immediately surrounding the axis of symmetry relatively defect free. The resulting stack can then be patterned to leave only the region that is relatively defect free.

A magnetic sensor includes: a substrate; and a sensitive portion disposed on the substrate and having a longitudinal direction and a transverse direction. The sensitive portion senses a magnetic field by a magnetic impedance effect. The sensitive portion includes a soft magnetic material layer composed of a soft magnetic material having uniaxial magnetic anisotropy in a direction intersecting the longitudinal direction and sensing the magnetic field. The sensitive portion also includes a secondary soft magnetic material layer laminated between the substrate and the soft magnetic material layer. The secondary soft magnetic material layer is composed of a soft magnetic material with large saturation magnetization compared to the soft magnetic material constituting the soft magnetic material layer.

A magnetic sensor includes: a substrate; and a sensitive portion disposed on the substrate and having a longitudinal direction and a transverse direction. The sensitive portion senses a magnetic field by a magnetic impedance effect. The sensitive portion includes a soft magnetic material layer composed of a soft magnetic material having uniaxial magnetic anisotropy in a direction intersecting the longitudinal direction and sensing the magnetic field. The sensitive portion also includes a secondary soft magnetic material layer laminated between the substrate and the soft magnetic material layer. The secondary soft magnetic material layer is composed of a soft magnetic material with large saturation magnetization compared to the soft magnetic material constituting the soft magnetic material layer.

A magnetic detection circuit for a magnetic random access memory (MRAM) is provided. The magnetic detection circuit includes a sensing array and a controller. The sensing array includes a plurality of sensing cells, and each of plurality of sensing cells includes a first magnetic tunnel junction (MTJ) device. The controller is configured to periodically write and read the sensing cells to obtain a difference between first data written to the sensing cells and second data read from the sensing cells. When the difference between the first data and the second data is greater than a threshold value, the controller is configured to stop a write operation of a plurality of memory cells of the MRAM until the difference between the first data and the second data is less than the threshold value.

A magnetic detection circuit for a magnetic random access memory (MRAM) is provided. The magnetic detection circuit includes a sensing array and a controller. The sensing array includes a plurality of sensing cells, and each of plurality of sensing cells includes a first magnetic tunnel junction (MTJ) device. The controller is configured to periodically write and read the sensing cells to obtain a difference between first data written to the sensing cells and second data read from the sensing cells. When the difference between the first data and the second data is greater than a threshold value, the controller is configured to stop a write operation of a plurality of memory cells of the MRAM until the difference between the first data and the second data is less than the threshold value.

Provided is a sputtering target, comprising: from 0.001 mol % to 0.5 mol % of Bi; from 45 mol % or less of Cr; 45 mol % or less of Pt; 60 mol % or less of Ru; and a total of 1 mol % to 35 mol % of at least one metal oxide, the balance being Co and inevitable impurities.

A magnetic laminating structure and process for preventing substrate bowing include a first magnetic layer, at least one additional magnetic layer, and a dielectric spacer disposed between the first and at least one additional magnetic layers. The magnetic layers are characterized by defined tensile strength. To balance the tensile strength of the magnetic layer, the dielectric layer is selected to provide compressive strength so as to counteract the tendency of the wafer to bow as a consequence of the tensile strength imparted by the magnetic layer(s).

A magnetic laminating structure and process for preventing substrate bowing include a first magnetic layer, at least one additional magnetic layer, and a dielectric spacer disposed between the first and at least one additional magnetic layers. The magnetic layers are characterized by defined tensile strength. To balance the tensile strength of the magnetic layer, the dielectric layer is selected to provide compressive strength so as to counteract the tendency of the wafer to bow as a consequence of the tensile strength imparted by the magnetic layer(s).

A thermoelectric conversion element 10 includes an anomalous Nernst material 11 having the anomalous Nernst effect, in which: the anomalous Nernst material 11 includes at least an element having the inverse spin-Hall effect; and the element is spin-polarized. By applying, for example, a magnetic field to such the thermoelectric conversion element 10 in the x direction and a temperature gradient thereto in the z direction, thermoelectromotive force can be taken out from terminals 12.