The present disclosure provides an optical isolator which includes a planar lightwave circuit, a magneto-optic thin film and a metal thin film with a magnetic field. A channel for transmitting an optical signal is configured in the planar lightwave circuit. The magneto-optic thin film is disposed on the planar lightwave circuit, and a plane on which the magneto-optic thin film is located is parallel to the channel. The metal thin film is disposed on the magneto-optic thin film.

A nano multilayer film of electrical field modulation type, a field effect transistor of electrical field modulation type, an electrical field sensor of switch type, and a random access memory of electrical field drive type can obtain an electro-resistance effect in an electrical field modulation multilayer film at room temperature. The nano multilayer film includes in succession from bottom to top a bottom layer, a substrate, a bottom layer, a functional layer, a buffer layer, an insulation layer, a conductive layer, and a cap layer. The buffer layer and the insulation layer can be selectively added as required when the conductive layer is made of a magnetic metal. The effect of influencing and changing the conductivity of the metal layer and thus adjusting the change in the resistance of the devices can obtain different resistance states corresponding to different electrical fields and achieving an electro-resistance effect.

A magnetoresistance effect element having a large MR ratio is provided. This magnetoresistance effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a nonmagnetic layer. The first ferromagnetic layer includes a first layer and a second layer. The first layer is closer to the nonmagnetic layer than the second layer. The first layer has a Heusler alloy containing at least partially crystallized Co. The second layer contains a material different from the Heusler alloy and has at least a partially crystallized ferromagnetic material. The first layer and the second layer have added first atoms. The first atom is any one selected from the group consisting of Mg, Al, Cr, Mn, Ni, Cu, Zn, Pd, Cd, In, Sn, Sb, Pt, Au, and Bi.

A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, and at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy represented by the following General Formula (1):

Co.sub.2Fe.sub.X(1)

(in Formula (1), X represents one or more elements selected from the group consisting of Mn, Cr, Si, Al, Ga and Ge, and and represent numbers that satisfy 2.3+, <, and 0.5<<1.9).

A single-crystalline LnBM.sub.2O.sub.5+ or LnBM.sub.2O.sub.5.5+ compound is provided, which includes an ordered oxygen vacancy structure; wherein Ln is a lanthanide, B is an alkali earth metal, M is a transition metal, O is oxygen, and 01. Methods of making and using the compound, and devices and compositions including same are also provided.

In order to obtain an inductor element advantageous for miniaturization, an inductor element 10 according to an embodiment of the present disclosure is provided with a metal medium 2 in which ordered spins are spatially arranged so as to have a non-collinear spin structure when traced in a certain direction. In the inductor element, an electric current I is applied through the metal medium so as to have a projective component of the direction. Preferable examples of the non-collinear spin structure for the metal medium include a spiral structure and a cycloidal structure.