Acoustically mediated pulsed radiation sources, phased arrays incorporating the radiation sources, and methods of using the radiation sources and phased arrays to generate electromagnetic radiation via magnetic dipole emission are provided. The radiation sources are based on a superlattice heterostructure that supports in-phase magnetic dipole emission from a series of magnetic insulator layers disposed along the length of the heterostructure.

A first aspect provides a topological quantum computing device comprising a network of semiconductor-superconductor nanowires, each nanowire comprising a length of semiconductor formed over a substrate and a coating of superconductor formed over at least part of the semiconductor; wherein at least some of the nanowires further comprise a coating of ferromagnetic insulator disposed over at least part of the semiconductor. A second aspect provides a method of fabricating a quantum or spintronic device comprising a heterostructure of semiconductor and ferromagnetic insulator, by: forming a portion of the semiconductor over a substrate in a first vacuum chamber, and growing a coating of the ferromagnetic insulator on the semiconductor by epitaxy in a second vacuum chamber connected to the first vacuum chamber by a vacuum tunnel, wherein the semiconductor comprises InAs and the ferromagnetic insulator comprises EuS.

A magnetic device and method for providing the magnetic device are disclosed. The magnetic device includes a multilayer structure and a magnetic layer. The multilayer structure includes alternating layers of A and E. A includes a first material. The first material includes at least one of Co, Ru, or Ir. The first material may include an IrCo alloy. E includes at least one other material that includes Al. The other material(s) may include an alloy selected from AlGa, AlSn, AlGe, AlGaGe, AlGaSn, AlGeSn, and AlGaGeSn. A composition of the multilayer structure is represented by A.sub.1-xE.sub.x, where x is at least 0.45 and not more than 0.55. The magnetic layer includes an Al-doped Heusler compound. The magnetic layer shares an interface with the multilayer structure.

An inductor can be formed in a coreless electronic substrate from magnetic materials and/or fabrication processes that do not result in the magnetic materials leaching into plating and/or etching solutions/chemistries, and results in a unique inductor structure. This may be achieved by forming the inductors from magnetic ferrites. The formation of the electronic substrates may also include process sequences that prevent exposure of the magnetic ferrites to the plating and/or etching solutions/chemistries.

Some variations provide a magnetically anisotropic structure comprising a hexaferrite film disposed on a substrate, wherein the hexaferrite film contains a plurality of discrete and aligned magnetic hexaferrite particles, wherein the hexaferrite film is characterized by an average film thickness from about 1 micron to about 500 microns, and wherein the hexaferrite film contains less than 2 wt % organic matter. The hexaferrite film does not require a binder. Discrete particles are not sintered or annealed together because the maximum processing temperature to fabricate the structure is 500° C. or less, such as 250° C. or less. The magnetic hexaferrite particles may contain barium hexaferrite (BaFe.sub.12O.sub.19) and/or strontium hexaferrite (SrFe.sub.12O.sub.19). The hexaferrite film may be characterized by a remanence-to-saturation magnetization ratio of at least 0.7. Methods of making and using the magnetically anisotropic structure are also described.

A monolithic multiferroic heterostructure fabricated using CSD (chemical solution deposition) is disclosed. The monolithic heterostructure includes a substrate, a ferromagnetic layer, a ferroelectric layer, and one or more seed layers that enhance crystallinity and promote high frequency performance.

There is provided a magnetic field shielding sheet for wireless power transmission. The present disclosure to provide a magnetic field shielding sheet for wireless power transmission that includes a first shielding sheet for shielding a magnetic field generated from a first wireless power transmission antenna operable in a magnetic induction method, a second shielding sheet for shielding a magnetic field generated from a second wireless power transmission antenna operable in a magnetic resonance method, and a third shielding sheet which is stacked on the same surface of the first shielding sheet and the second shielding sheet so as to cover the first shielding sheet and the second shielding sheet, for shielding the magnetic field generated from the second wireless power transmission antenna.

There is provided a magnetic field shielding sheet for wireless power transmission. The present disclosure to provide a magnetic field shielding sheet for wireless power transmission that includes a first shielding sheet for shielding a magnetic field generated from a first wireless power transmission antenna operable in a magnetic induction method, a second shielding sheet for shielding a magnetic field generated from a second wireless power transmission antenna operable in a magnetic resonance method, and a third shielding sheet which is stacked on the same surface of the first shielding sheet and the second shielding sheet so as to cover the first shielding sheet and the second shielding sheet, for shielding the magnetic field generated from the second wireless power transmission antenna.

A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer that is interposed between the first ferromagnetic layer and the second ferromagnetic layer. The tunnel barrier layer is a stacked body including one or more high-barrier-height layers and one or more low-barrier-height layers, the one or more high-barrier-height layers having a relatively high barrier height with respect to the one or more low-barrier-height layers and the one or more low-barrier-height layers having a relatively low barrier height with respect to the one or more high-barrier-height layers. A minimum difference of barrier height between the one or more high-barrier-height layers and the one or more low-barrier-height layers is equal to or higher than 0.5 eV.

A first aspect provides a topological quantum computing device comprising a network of semiconductor-superconductor nanowires, each nanowire comprising a length of semiconductor formed over a substrate and a coating of superconductor formed over at least part of the semiconductor; wherein at least some of the nanowires further comprise a coating of ferromagnetic insulator disposed over at least part of the semiconductor. A second aspect provides a method of fabricating a quantum or spintronic device comprising a heterostructure of semiconductor and ferromagnetic insulator, by: forming a portion of the semiconductor over a substrate in a first vacuum chamber, and growing a coating of the ferromagnetic insulator on the semiconductor by epitaxy in a second vacuum chamber connected to the first vacuum chamber by a vacuum tunnel, wherein the semiconductor comprises InAs and the ferromagnetic insulator comprises EuS.