Patent classifications
H01F10/20
MAGNON SPIN VALVE, MAGNON SENSOR, MAGNON FIELD EFFECT TRANSISTOR, MAGNON TUNNEL JUNCTION AND MAGNON MEMORY
The present disclosure relates to a magnon spin valve device, a magnon sensor, a magnon field effect transistor, a magnon tunnel junction and a magnon memory. A magnon spin valve device may comprise a first ferromagnetic insulation layer, a non-magnetic conductive layer disposed on the first ferromagnetic insulation layer, and a second ferromagnetic insulation layer disposed on the non-magnetic conductive layer.
MAGNETIC ALLOY MATERIAL
A magnetic alloy material according to the present disclosure is an iron-aluminum-terbium based magnetic alloy material containing a total of 70 atomic percent or more of three elements of iron, aluminum, and terbium.
Magnetic shielding unit for magnetic security transmission, module comprising same, and portable device comprising same
Disclosed is a magnetic field shielding unit for magnetic security transmission. The magnetic field shielding unit for magnetic security transmission includes a magnetic shielding layer formed of fragments of ferrite containing magnesium oxide (MgO) shredded to improve flexibility of the magnetic field shielding unit. The ferrite containing magnesium oxide has a real part () of the complex permeability of 650 or more at a frequency of 100 kHz. Accordingly, it is possible to prevent influence of a magnetic field on components of a mobile terminal device or a body of a user who uses the same, and to further increase the characteristics of the combined antennas even if the magnetic field shielding unit is combined with various kinds and purposes of antennas having various structures, shapes, sizes and intrinsic characteristics (inductance, resistivity, etc.).
Magnetic shielding unit for magnetic security transmission, module comprising same, and portable device comprising same
Disclosed is a magnetic field shielding unit for magnetic security transmission. The magnetic field shielding unit for magnetic security transmission includes a magnetic shielding layer formed of fragments of ferrite containing magnesium oxide (MgO) shredded to improve flexibility of the magnetic field shielding unit. The ferrite containing magnesium oxide has a real part () of the complex permeability of 650 or more at a frequency of 100 kHz. Accordingly, it is possible to prevent influence of a magnetic field on components of a mobile terminal device or a body of a user who uses the same, and to further increase the characteristics of the combined antennas even if the magnetic field shielding unit is combined with various kinds and purposes of antennas having various structures, shapes, sizes and intrinsic characteristics (inductance, resistivity, etc.).
Ferrite sheet, method for manufacturing same, and electronic component comprising same
A ferrite sheet includes acicular ferrite powder, and has a uniaxially-oriented magnetic direction. The ferrite sheet is capable of remarkably increasing magnetic permeability and saturation magnetization, and accordingly is capable of remarkably improving the power efficiency of an electronic device by minimizing magnetic field leakage when being applied to a shielding sheet.
Ferrite sheet, method for manufacturing same, and electronic component comprising same
A ferrite sheet includes acicular ferrite powder, and has a uniaxially-oriented magnetic direction. The ferrite sheet is capable of remarkably increasing magnetic permeability and saturation magnetization, and accordingly is capable of remarkably improving the power efficiency of an electronic device by minimizing magnetic field leakage when being applied to a shielding sheet.
Semiconductor and ferromagnetic insulator heterostructure
A first aspect provides a topological quantum computing device comprising a network of semiconductor-superconductor nanowires, each nanowire comprising a length of semiconductor formed over a substrate and a coating of superconductor formed over at least part of the semiconductor; wherein at least some of the nanowires further comprise a coating of ferromagnetic insulator disposed over at least part of the semiconductor. A second aspect provides a method of fabricating a quantum or spintronic device comprising a heterostructure of semiconductor and ferromagnetic insulator, by: forming a portion of the semiconductor over a substrate in a first vacuum chamber, and growing a coating of the ferromagnetic insulator on the semiconductor by epitaxy in a second vacuum chamber connected to the first vacuum chamber by a vacuum tunnel, wherein the semiconductor comprises InAs and the ferromagnetic insulator comprises EuS.
Powder for dust cores, method for producing same, dust core and method for producing dust core
A powder for dust cores includes an aggregate of soft magnetic particles, each of which includes a soft magnetic metal particle, and a ferrite film that covers a surface of the soft magnetic metal particle and includes ferrite crystal grains having a spinel structure. A diffraction peak derived from the ferrite crystal grains exists in a powder X-ray diffraction pattern. By a method for producing a powder for dust cores, a raw material powder that includes an aggregate of soft magnetic metal particles is prepared. Furthermore, many ferrite fine particles are formed on a surface of each of the soft magnetic metal particles of the raw material powder. Additionally, the ferrite fine particles are coarsely crystallized through heat treatment to form a ferrite film, which includes ferrite crystal grains having a spinel structure, on the surface of the each of the soft magnetic metal particles.
CHIP-SCALE RESONANT GYRATOR FOR PASSIVE NON-RECIPROCAL DEVICES
A method includes depositing a first metal layer on a semiconductor substrate; etching the first metal layer to form a first electrode having a first lead; depositing a piezoelectric layer on the semiconductor substrate and first electrode; etching the piezoelectric layer to a shape of the gyrator to be formed within the circulator; depositing a second metal layer on the piezoelectric layer; etching the second metal layer to form a second electrode having a second lead, the second electrode being positioned opposite the first electrode, wherein the first lead and the second lead form an electrical port; depositing a magnetostrictive layer on the second electrode; etching the magnetostrictive layer to approximately the shape of the piezoelectric layer; depositing a third metal layer on the magnetostrictive layer; and etching the third metal layer to form a metal coil that has a gap on one side to define a magnetic port.
CHIP-SCALE RESONANT GYRATOR FOR PASSIVE NON-RECIPROCAL DEVICES
A method includes depositing a first metal layer on a semiconductor substrate; etching the first metal layer to form a first electrode having a first lead; depositing a piezoelectric layer on the semiconductor substrate and first electrode; etching the piezoelectric layer to a shape of the gyrator to be formed within the circulator; depositing a second metal layer on the piezoelectric layer; etching the second metal layer to form a second electrode having a second lead, the second electrode being positioned opposite the first electrode, wherein the first lead and the second lead form an electrical port; depositing a magnetostrictive layer on the second electrode; etching the magnetostrictive layer to approximately the shape of the piezoelectric layer; depositing a third metal layer on the magnetostrictive layer; and etching the third metal layer to form a metal coil that has a gap on one side to define a magnetic port.