Provided herein is a magnetic sheet. The magnetic sheet according to one embodiment of the present invention includes a magnetic layer formed of crushed pieces of a magnetic body to improve flexibility of the magnetic sheet, and a thin film coating layer formed on at least one surface of the magnetic layer to maintain the magnetic layer in a sheet shape and buffer an external force applied to the crushed pieces of the magnetic body. According to the present invention, since the magnetic sheet is improved in mechanical strength properties, such as a tensile property, a bending property, and the like, to have significantly superior flexibility, degradation of physical properties, such as magnetic permeability and the like, caused by physical damage such as unintended cracks in the magnetic body provided in the magnetic sheet can be prevented even in the process of storing, transferring, and attaching the magnetic sheet to a target object and during usage of an electronic device provided with the target object to which the magnetic sheet is attached, and the magnetic sheet can be attached to a target surface of the target object with a superior adhering force even when a stepped portion is present at the surface, and at the same time, the magnetic sheet can block the influence of a magnetic field on parts of a portable terminal device or a human body of a user using the portable terminal device, significantly increase transmission and reception efficiencies and distances of a data and/or wireless power signal, and maintain the above-described performance for a long period of time, such that the magnetic sheet can be widely used in various portable devices such as mobile devices, smart appliances, devices for the Internet of Things, and the like.

Provided herein is a magnetic sheet. The magnetic sheet according to one embodiment of the present invention includes a magnetic layer formed of crushed pieces of a magnetic body to improve flexibility of the magnetic sheet, and a thin film coating layer formed on at least one surface of the magnetic layer to maintain the magnetic layer in a sheet shape and buffer an external force applied to the crushed pieces of the magnetic body. According to the present invention, since the magnetic sheet is improved in mechanical strength properties, such as a tensile property, a bending property, and the like, to have significantly superior flexibility, degradation of physical properties, such as magnetic permeability and the like, caused by physical damage such as unintended cracks in the magnetic body provided in the magnetic sheet can be prevented even in the process of storing, transferring, and attaching the magnetic sheet to a target object and during usage of an electronic device provided with the target object to which the magnetic sheet is attached, and the magnetic sheet can be attached to a target surface of the target object with a superior adhering force even when a stepped portion is present at the surface, and at the same time, the magnetic sheet can block the influence of a magnetic field on parts of a portable terminal device or a human body of a user using the portable terminal device, significantly increase transmission and reception efficiencies and distances of a data and/or wireless power signal, and maintain the above-described performance for a long period of time, such that the magnetic sheet can be widely used in various portable devices such as mobile devices, smart appliances, devices for the Internet of Things, and the like.

A method of making a ferrite thin film is provided in which a portion of the iron ions in the ferrite are substituted by ions of at least one other metal. The substituting ions occupy both tetrahedral and octahedral sites in the unit cell of the ferrite crystal. The method includes placing each of a plurality of targets, one at a time, in close proximity to a substrate in a defined sequence; ablating the target thus placed using laser pulses, thereby causing ions from the target to deposit on the substrate; repeating these steps, thereby generating a film; and annealing the film in the presence of oxygen. The plurality of targets, the sequence of their ablation, and the number of laser pulses that each target is subjected to, are selected so as to allow the substituting ions to occupy both tetrahedral and octahedral sites in the unit cell.

A method of making a ferrite thin film is provided in which a portion of the iron ions in the ferrite are substituted by ions of at least one other metal. The substituting ions occupy both tetrahedral and octahedral sites in the unit cell of the ferrite crystal. The method includes placing each of a plurality of targets, one at a time, in close proximity to a substrate in a defined sequence; ablating the target thus placed using laser pulses, thereby causing ions from the target to deposit on the substrate; repeating these steps, thereby generating a film; and annealing the film in the presence of oxygen. The plurality of targets, the sequence of their ablation, and the number of laser pulses that each target is subjected to, are selected so as to allow the substituting ions to occupy both tetrahedral and octahedral sites in the unit cell.

An integrated circuit is a layered device, on a semiconductor substrate, which contains metal electrodes that sandwich a piezoelectric layer, followed by a magnetostrictive layer and a metal coil. The metal electrodes define an electrical port across which to receive an alternating current (AC) voltage, which is applied across the piezoelectric layer to cause a time-varying strain in the piezoelectric layer. The magnetostrictive layer is to translate the time-varying strain, received by way of a vibration mode from interaction with the piezoelectric layer, into a time-varying electromagnetic field. The metal coil, disposed on the magnetostrictive layer, includes a magnetic port at which to induce a current based on exposure to the time-varying electromagnetic field generated by the magnetostrictive layer.

An integrated circuit is a layered device, on a semiconductor substrate, which contains metal electrodes that sandwich a piezoelectric layer, followed by a magnetostrictive layer and a metal coil. The metal electrodes define an electrical port across which to receive an alternating current (AC) voltage, which is applied across the piezoelectric layer to cause a time-varying strain in the piezoelectric layer. The magnetostrictive layer is to translate the time-varying strain, received by way of a vibration mode from interaction with the piezoelectric layer, into a time-varying electromagnetic field. The metal coil, disposed on the magnetostrictive layer, includes a magnetic port at which to induce a current based on exposure to the time-varying electromagnetic field generated by the magnetostrictive layer.

A first aspect provides a topological quantum computing device comprising a network of semiconductor-superconductor nanowires, each nanowire comprising a length of semiconductor formed over a substrate and a coating of superconductor formed over at least part of the semiconductor; wherein at least some of the nanowires further comprise a coating of ferromagnetic insulator disposed over at least part of the semiconductor. A second aspect provides a method of fabricating a quantum or spintronic device comprising a heterostructure of semiconductor and ferromagnetic insulator, by: forming a portion of the semiconductor over a substrate in a first vacuum chamber, and growing a coating of the ferromagnetic insulator on the semiconductor by epitaxy in a second vacuum chamber connected to the first vacuum chamber by a vacuum tunnel, wherein the semiconductor comprises InAs and the ferromagnetic insulator comprises EuS.

A TMR element includes a magnetic tunnel junction element unit and a side wall portion that includes an insulation material and is disposed on a side surface of the magnetic tunnel junction element unit. The magnetic tunnel junction element unit includes a reference layer, a magnetization free layer, a tunnel barrier layer that is stacked in a stack direction between the reference layer and the magnetization free layer, and a cap layer is stacked on the side of the magnetization free layer opposite to the tunnel barrier layer side. The side wall portion includes a first region that includes the insulation material and covers a side surface of at least one of the reference layer, the tunnel barrier layer, the magnetization free layer, or the cap layer of the magnetic tunnel junction element unit.

A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer that is interposed between the first ferromagnetic layer and the second ferromagnetic layer. The tunnel barrier layer is a stacked body including one or more high-barrier-height layers and one or more low-barrier-height layers, the one or more high-barrier-height layers having a relatively high barrier height with respect to the one or more low-barrier-height layers and the one or more low-barrier-height layers having a relatively low barrier height with respect to the one or more high-barrier-height layers. A minimum difference of barrier height between the one or more high-barrier-height layers and the one or more low-barrier-height layers is equal to or higher than 0.5 eV.

The present disclosure relates to a magnon spin valve device, a magnon sensor, a magnon field effect transistor, a magnon tunnel junction and a magnon memory. A magnon spin valve device may comprise a first ferromagnetic insulation layer, a non-magnetic conductive layer disposed on the first ferromagnetic insulation layer, and a second ferromagnetic insulation layer disposed on the non-magnetic conductive layer.