A system and a method for the deterministic generation of magnetic skyrmions includes a magnetic strip configured to store and transport skyrmions. The magnetic strip includes one or more spatial inhomogeneities configured to generate a skyrmion at known locations when excited by a current pulse. A current pulse generator is used to inject current pulses into the magnetic strip via contact pads electrically coupled to both the current pulse generator and the magnetic strip. The system also includes a magnetic field source to apply an out-of-plane magnetic field across the magnetic strip to facilitate generation of skyrmions. Skyrmions can be generated by applying an out-of-plane magnetic field to the magnetic strip and injecting a current pulse with sufficient current density towards the spatial inhomogeneities. Once a skyrmion is generated, another current pulse with sufficient current density can be injected to move the skyrmion.

Provided is a magnetoresistive element including: a storage layer of which a magnetization direction changes in accordance with information; a first magnetization fixed layer below the storage layer having a magnetization direction perpendicular to a film surface; a second magnetization fixed layer above the storage layer having a magnetization direction that is perpendicular to the film surface and that is opposite to the magnetization direction of the first magnetization fixed layer; a first intermediate layer between the first magnetization fixed layer and the storage layer; and a second intermediate layer between the second magnetization fixed layer and the storage layer. The storage layer includes a first magnetic material layer, a non-magnetic material layer, and a second magnetic material layer laminated in that order, and one of the first magnetic material layer and the second magnetic material layer has a magnetization direction parallel to the film surface.

A magnetic junction usable in a magnetic device is described. The magnetic junction has a free layer, a reference layer, and a nonmagnetic spacer layer between reference and free layers. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The free layer has a length in a first direction, a width in a second direction perpendicular to the first direction, an exchange stiffness and an aspect ratio equal to the length divided by the width. The aspect ratio is greater than one. The exchange stiffness is not less than 210.sup.6 erg/cm.

There is provided a magnetoresistive effect element having improved magnetoresistive effect. A magnetoresistive effect element MR includes a first ferromagnetic layer 4 as a fixed magnetization layer, a second ferromagnetic layer 6 as a free magnetization layer, and a nonmagnetic spacer layer 5 provided between the first ferromagnetic layer 4 and the second ferromagnetic layer 6. The nonmagnetic spacer layer 5 includes at least one of a first insertion layer 5A provided under the nonmagnetic spacer layer 5 and a second insertion layer 5C provided over the nonmagnetic spacer layer 5. The first insertion layer 5A and the second insertion layer 5C are made of Fe.sub.2TiSi.

The magnetoresistance effect device includes: a first port; a second port; a magnetoresistance effect element; a first signal line that is connected to the first port and applies a high frequency magnetic field to the magnetoresistance effect element; a second signal line that connects the second port and the magnetoresistance effect element to each other; and a direct current application terminal capable of being connected to a power supply that applies a direct current or a direct current voltage. The first signal line includes a magnetic field generator, which extends in a first direction, at a position in the lamination direction of the magnetoresistance effect element or an in-plane direction that is orthogonal to the lamination direction, and the magnetic field generator and the magnetoresistance effect element include an overlapping portion as viewed from the lamination direction in which the magnetic field generator is disposed, or the in-plane direction.

The present invention provides a high-frequency phase-locked oscillation circuit having an extremely narrow peak width and a stable frequency so that a high-frequency wave that is oscillated by the MR element solves a problem of a large peak width of oscillation spectrum. The high-frequency phase-locked oscillation circuit is achieved by providing: a magnetoresistive element 6 that oscillates a high-frequency wave with an oscillating frequency f.sub.out; a reference signal source 1 that outputs a reference signal with a reference frequency f.sub.ref; a phase-locked loop circuit having a phase comparator 3, a loop filer 4, and a frequency divider 9; an adder 5 that adds a phase error signal A output from the loop filter and a bias voltage B for oscillating the high-frequency wave from the magnetoresistive element, and that inputs an added bias voltage (A+B) to the magnetoresistive element 6; and a filter 7 provided between the frequency divider 9 and the magnetoresistive element 6 in a region closer to an input side of the frequency divider 9, the filter cutting off the reference frequency f.sub.ref while allowing the oscillating frequency f.sub.out to pass through the filter.

A method of cleaning a substrate processing apparatus that etches a film including a metal, the method include a first cleaning step of providing a gas containing a hydrogen-containing gas, and removing a carbon-containing deposition by plasma generated from the gas containing the hydrogen-containing gas; a second cleaning step of, after the first cleaning step, providing an inert gas, and removing a metal-containing deposition by plasma generated from the inert gas; and a third cleaning step of, after the second cleaning step, providing a gas containing a fluorine-containing gas and an oxygen-containing gas, and removing a silicon-containing deposition by plasma generated from the gas containing the fluorine-containing gas and the oxygen-containing gas.

A device implemented based on the disclosed technology includes a thin-film magnetic structure that includes a substrate and thin film layers formed over the substrate to include a ferromagnetic layer formed over the substrate, and a non-magnetic dusting layer in contact with the ferromagnetic layer and structured to have a thickness around one molecular layer to enhance an interfacial perpendicular magnetic anisotropy energy density of the ferromagnetic layer.

A dual magnetic tunnel junction (DMTJ) is disclosed with a PL1/TB1/free layer/TB2/PL2/capping layer configuration wherein a first tunnel barrier (TB1) has a substantially lower resistance x area (RA.sub.1) product than RA.sub.2 for an overlying second tunnel barrier (TB2) to provide an acceptable net magnetoresistive ratio (DRR). Moreover, magnetizations in first and second pinned layers, PL1 and PL2, respectively, are aligned antiparallel to enable a lower critical switching current than when in a parallel alignment. An oxide capping layer having a RA.sub.CAP is formed on PL2 to provide higher PL2 stability. The condition RA.sub.1<RA.sub.2 and RA.sub.CAP<RA.sub.2 is achieved when TB1 and the oxide capping layer have one or both of a smaller thickness and a lower oxidation state than TB2, are comprised of conductive (metal) channels in a metal oxide or metal oxynitride matrix, or are comprised of a doped metal oxide or doped metal oxynitride layer.

The present disclosure relates to a composition that includes a nanocrystalline core that includes a perovskite and having an outer surface, and a chiral molecule having a functional group, where the functional group is bonded to a first portion of the outer surface, and the composition is capable of circularly polarized luminescence (CPL). In some embodiments of the present disclosure, the composition is capable of absorbing circularly-polarized light.