Various devices are described (along with methods for making them), where the device has a tunnel barrier sandwiched between two magnetic layers (one of the magnetic layers functioning as a free layer and the other of the magnetic layers functioning as a reference layer). One magnetic layer underlies the tunnel barrier and the other magnetic layer overlies the tunnel barrier, thereby permitting spin-polarized current to pass across the magnetic layers and through the tunnel barrier. At least one of the magnetic layers includes a metal oxide sublayer (e.g., an MgO sublayer) sandwiched between magnetic material.

Acoustically mediated pulsed radiation sources, phased arrays incorporating the radiation sources, and methods of using the radiation sources and phased arrays to generate electromagnetic radiation via magnetic dipole emission are provided. The radiation sources are based on a superlattice heterostructure that supports in-phase magnetic dipole emission from a series of magnetic insulator layers disposed along the length of the heterostructure.

Memory stacks, memory devices and method of forming the same are provided. A memory stack includes a spin-orbit torque layer, a magnetic bias layer and a free layer. The magnetic bias layer is in physical contact with the spin-orbit torque layer and has a first magnetic anisotropy. The free layer is disposed adjacent to the spin-orbit torque layer and has a second magnetic anisotropy perpendicular to the first magnetic anisotropy.

A Magnetic Tunnel Junction (MTJ) device can include a reference magnetic layer having one or more trenches disposed therein. One or more sections of a tunnel barrier layer can be disposed on the walls of the one or more trenches. One or more sections of a free magnetic layer can be disposed on the one or more sections of the tunnel barrier layer in the one or more trenches. One or more sections of a conductive layer can be disposed on the one or more sections of the free magnetic layer in the one or more trenches. One or more insulator blocks can be disposed between corresponding sections of the tunnel barrier layer, corresponding sections of the free magnetic layer and corresponding sections of the conductive layer in the one or more trenches.

Memory stacks, memory devices and method of forming the same are provided. A memory stack includes a spin-orbit torque layer, a magnetic bias layer and a free layer. The magnetic bias layer is in physical contact with the spin-orbit torque layer and has a first magnetic anisotropy. The free layer is disposed adjacent to the spin-orbit torque layer and has a second magnetic anisotropy perpendicular to the first magnetic anisotropy.

Encapsulation topography-assisted techniques for forming self-aligned top contacts in MRAM devices are provided. In one aspect, a method for forming an MRAM device includes: forming MTJs on interconnects embedded in a first dielectric; depositing an encapsulation layer over the MTJs; burying the MTJs in a second dielectric; patterning a trench in the second dielectric over the MTJs exposing the encapsulation layer over tops of the MTJs which creates a topography at the trench bottom; forming a metal line in the trench over the topography; recessing the metal line which breaks up the metal line into segments separated by exposed peaks of the encapsulation layer; recessing the exposed peaks of the encapsulation layer to form recesses at the tops of the MTJs; and forming self-aligned contacts in the recesses. An MRAM device is also provided.

A stress sensor includes a stress detection layer including a laminated body including a first magnetic layer, a first non-magnetic layer, and a second magnetic layer that are laminated, wherein the first magnetic layer and the second magnetic layer have mutually different magnetoelastic coupling constants, such that a stress is detected by an electrical resistance dependent on a relative angle of magnetization between the first magnetic layer and the second magnetic layer varying depending on the stress externally applied.

A perpendicular bottom-free-layer STT-MRAM cell includes a bottom-free-layer magnetic tunnel junction (BMTJ). The BMTJ includes a composite metal oxide seed layer, and a free layer comprising boron (B) on the composite metal oxide seed layer. The composite metal oxide seed layer includes a first metal layer; a metal oxide layer on the first metal layer; and a second metal layer on the metal oxide layer. The second metal layer has been oxygen treated.

Disclosed herein is a detection device comprising sensors with spin torque oscillators (STOs), at least one fluidic channel configured to receive molecules to be detected, and detection circuitry coupled to the sensors. At least some of the molecules to be detected are labeled by magnetic nanoparticles (MNPs). The presence of one or more MNPs in the vicinity of a STO subjected to a bias current changes the oscillation frequency of the STO. The sensors are encapsulated by a material, such as an insulator, separating the sensors from the at least one fluidic channel. A surface of the material provides binding sites for the molecules to be detected. The detection circuitry is configured to detect changes in the oscillation frequencies of the sensors in response to presence or absence of one or more MNPs coupled to one or more binding sites associated with the sensors.

A semiconductor device includes a magnetic random access memory (MRAM) cell. The MRAM cell includes a first magnetic layer disposed over a substrate, a first non-magnetic material layer made of a non-magnetic material and disposed over the first magnetic layer, a second magnetic layer disposed over the first non-magnetic material layer, and a second non-magnetic material layer disposed over the second magnetic layer. The second magnetic layer includes a plurality of magnetic material pieces separated from each other.