A circuit breaker having a monolithic structure and method of making is disclosed. The monolithic structure includes an arm portion having copper and a contact portion having a composite material. The composite material has a metallic matrix and a second phase disposed in the metallic matrix. The method of making the monolithic structure includes introducing a first powder into a first region of a mold, introducing a second powder into a second region of the mold, and consolidating the first powder and the second powder together. The first region of the mold corresponds to a contact portion, and the second region corresponds to an arm portion of the monolithic structure of the circuit breaker.

A surface layer including a base material made of a conductor and dispersed particles dispersed in the base material is formed on a surface of a fixed contact, and the dispersed particles each include a base particle that is metal oxide and a coating layer formed on an outer surface of the base particle.

A surface layer including a base material made of a conductor and dispersed particles dispersed in the base material is formed on a surface of a fixed contact, and the dispersed particles each include a base particle that is metal oxide and a coating layer formed on an outer surface of the base particle.

A method of fabricating and packaging an ohmic micro-electro-mechanical system (MEMS) switch device may comprise constructing the switch device on an insulating substrate. The switch device may have contacts that consist of a platinum-group metal. The method may further comprise forming an oxidized layer of the platinum-group metal on an outer surface of each of the one or more contacts. The method may further comprise bonding an insulating cap to the insulating substrate, to hermetically seal the switch device. The bonding may occur in an atmosphere that has a proportion of oxygen within a range of 0.5% to 30%, such that, after the switch device has been hermetically sealed within the sealed cavity, an atmosphere within the sealed cavity has a proportion of oxygen within the range of 0.5% to 30%. The platinum-group metal may be ruthenium, and the oxidized layer of the platinum-group metal may be ruthenium dioxide.

A method of fabricating and packaging an ohmic micro-electro-mechanical system (MEMS) switch device may comprise constructing the switch device on an insulating substrate. The switch device may have contacts that consist of a platinum-group metal. The method may further comprise forming an oxidized layer of the platinum-group metal on an outer surface of each of the one or more contacts. The method may further comprise bonding an insulating cap to the insulating substrate, to hermetically seal the switch device. The bonding may occur in an atmosphere that has a proportion of oxygen within a range of 0.5% to 30%, such that, after the switch device has been hermetically sealed within the sealed cavity, an atmosphere within the sealed cavity has a proportion of oxygen within the range of 0.5% to 30%. The platinum-group metal may be ruthenium, and the oxidized layer of the platinum-group metal may be ruthenium dioxide.

Various embodiments disclosed relate to an alloy. The alloy includes elemental silver. The alloy further includes a metal oxide phase in the elemental silver. The metal oxide phase includes a wetting agent layer that coats the metal oxide phase.

A process for producing a cadmium free electrical contact material having at least one metal and magnesium stannate Mg.sub.2SnO.sub.4. The process includes mixing pulverulent magnesium stannate Mg.sub.2SnO.sub.4 or a mamesium stannate precursor compound with at least one metal powder and optionally further oxides, pressing the mixture in order to obtain a compact and sintering the compact to obtain a sintered body.

An electrical contact tip for switching applications. The contact tip includes a body having a first layer and a second layer. The first layer arranged on the second layer and adapted to come in contact with a corresponding contact tip during switching operations. The first and second layers consist of Ag-composites of one or more elements, compounds or alloys, where the hardness of the first layer is lower than the hardness of the second layer.

An electrical contact tip for switching applications. The contact tip includes a body having a first layer and a second layer. The first layer arranged on the second layer and adapted to come in contact with a corresponding contact tip during switching operations. The first and second layers consist of Ag-composites of one or more elements, compounds or alloys, where the hardness of the first layer is lower than the hardness of the second layer.

A DC high-voltage relay with at least one contact pair including a movable contact and a fixed contact, the contact pair having a contact force and/or an opening force of 100 gf or more, having a rated voltage of 48 V or more, the movable contact and/or the fixed contact includes a Ag oxide-based contact material. Metal components contain at least one metal M essentially containing Zn, and a balance being Ag and inevitable impurity metals, and the contact material has a content of the metal M of 0.2% by mass or more and 8% by mass or less based on a total mass. The contact material has a material structure in which one or more oxides of the metal M having an average particle size of 0.01 m or more and 0.4 m or less are dispersed in a matrix including Ag or a Ag alloy.