A field emission electron source and a method of manufacturing the same. A field emission electron source comprises an emitting electrode and an extractor gate electrode. The emitting electrode comprising a plurality of particles with nanosharp protrusions. The extractor gate electrode comprises a metal. The extractor gate electrode is formed in a same plane as the emitting electrode. The extractor gate electrode is formed surrounding the emitting electrode. A method of manufacturing a field emission electron source comprises forming an emitting electrode comprising a plurality of particles with nanosharp protrusions using a direct ink writing (DIW) printer. The method comprises forming an extractor gate electrode comprising a metal using the DIW printer.

An emitter is configured to emit charged particles. The emitter comprises a body, a metal layer and a charged particle source layer. The body has a point. The metal layer is of a first metal on at least the point. The charged particle source layer is on the metal layer. The point comprises a second metal other than the first metal.

Controlling total emission current of an electron emitting construct in an x-ray emitting device by providing a cathode, providing multiple active areas each active area having a gated cone electron source, including multiple emitter tips arranged in an array, a gate electrode, and a gate interconnect lead connected to the gate electrode, providing an x-ray emitting construct comprising an anode, the anode being an x-ray target, situating the x-ray emitting construct facing the active areas face each other, selecting a set of active areas, and activating selected active areas by conductively connecting a voltage source to their associated the gate electrode interconnect lead.

A technique relates to a semiconductor device. An emitter electrode and a collector electrode are formed in a dielectric layer such that a nanogap separates the emitter electrode and the collector electrode, a portion of the emitter electrode including layers. A channel is formed in the dielectric layer so as to traverse the nanogap. A top layer is formed over the channel so as to cover the channel and the nanogap without filling in the channel and the nanogap, thereby forming a vacuum channel transistor structure.

A method of forming a vertical metal-air transistor device is provided. The method includes forming a precursor stack with a stack template on the precursor stack on a substrate. The method further includes forming a bottom spacer on the substrate around the precursor stack, and depositing a liner casing on the precursor stack. The method further includes depositing a conductive gate layer on the bottom spacer and liner casing. The method further includes reducing the size of the stack template to form a template post on the precursor stack, and forming a stack cap on the template post and precursor stack.

A technique relates to a semiconductor device. An emitter electrode and a collector electrode are formed in a dielectric layer such that a nanogap separates the emitter electrode and the collector electrode, a portion of the emitter electrode including layers. A channel is formed in the dielectric layer so as to traverse the nanogap. A top layer is formed over the channel so as to cover the channel and the nanogap without filling in the channel and the nanogap, thereby forming a vacuum channel transistor structure.

A method of forming a vertical metal-air transistor device is provided. The method includes forming a precursor stack with a stack template on the precursor stack on a substrate. The method further includes forming a bottom spacer on the substrate around the precursor stack, and depositing a liner casing on the precursor stack. The method further includes depositing a conductive gate layer on the bottom spacer and liner casing. The method further includes reducing the size of the stack template to form a template post on the precursor stack, and forming a stack cap on the template post and precursor stack.

A field emission electron source and a method of manufacturing the same. A field emission electron source comprises an emitting electrode and an extractor gate electrode. The emitting electrode comprising a plurality of particles with nanosharp protrusions. The extractor gate electrode comprises a metal. The extractor gate electrode is formed in a same plane as the emitting electrode. The extractor gate electrode is formed surrounding the emitting electrode. A method of manufacturing a field emission electron source comprises forming an emitting electrode comprising a plurality of particles with nanosharp protrusions using a direct ink writing (DIW) printer. The method comprises forming an extractor gate electrode comprising a metal using the DIW printer.

A method for making a carbon nanotube field emitter is provided. A carbon nanotube array and a cathode substrate are provided. The carbon nanotube array is heated to form a graphitized carbon nanotube array. A conductive adhesive layer is formed on a surface of the cathode substrate. One end of the graphitized carbon nanotube array is contact with the conductive adhesive layer. The conductive adhesive layer is solidified to fix the graphitized carbon nanotube array on the cathode substrate.

A robust cold cathode uses an electron emitting construct design possibly for an x-ray emitter device. The electron beam emitted by the emitting construct is focused and accelerated by an electrical field towards an electron anode target. A shield is provided to prevent a cold cathode from being damaged by ion bombardment in high-voltage applications and a non-emitter zone may provide a robust ion bombardment zone. The system is further configured to provide an angled target anode or a stepped target anode to further reduce the ion bombardment damage.